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You searched on: Topic Area: Semiconductors

Displaying records 11 to 20 of 48 records.
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11. Reliability Monitoring For Highly Leaky Devices
Topic: Semiconductors
Published: 5/31/2013
Authors: Jason T Ryan, Jason P Campbell, Kin P Cheung, John S Suehle, Richard Southwick, Anthony Oates
Abstract: We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP s ...

12. Thermo-Mechanical Characterization of Au‹In Transient Liquid Phase Bonding Die-Attach
Topic: Semiconductors
Published: 4/9/2013
Authors: Brian Joseph Grummel, Habib A Mustain, Z. John Shen, Allen R Hefner Jr.
Abstract: In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanica ...

13. Frequency-Modulated Charge Pumping: Defect Measurements with High Gate Leakage
Topic: Semiconductors
Published: 2/28/2013
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle, Anthony Oates
Abstract: Charge pumping is one of the most relied upon techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents which render the technique un ...

14. Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?
Topic: Semiconductors
Published: 1/31/2013
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different ...

15. 2012 Updates to the International Technology Roadmap for Semiconductors (ITRS) Metrology Chapter
Topic: Semiconductors
Published: 1/1/2013
Authors: Christina Ann Hacker, Alain C. Diebold
Abstract: During 2012, the main emphasis of the Metrology Technical Working Group was to revise the Metrology Technology Requirements Tables and initiate the new text for the 2013 revision of the International Technology Roadmap for Semiconductors (ITRS). The ...

16. Measurement Science for "More-Than-Moore" Technology Reliability Assessments
Topic: Semiconductors
Published: 10/12/2012
Authors: Chukwudi Azubuike Okoro, Jungjoon Ahn, Meagan V. Kelso, Pavel Kabos, Joseph J Kopanski, Yaw S Obeng
Abstract: In this paper, we will present an overview of metrology issues and some of the techniques currently under development in our group at NIST, aimed at understanding some of the potential performance limiting issues in such highly integrated systems ...

17. Current Compliance Circuit to Improve Variation in ON State Characteristics and to Minimize RESET Current
Topic: Semiconductors
Published: 10/7/2012
Authors: Pragya Rasmi Shrestha, Adaku Ochia, Jason P Campbell, Canute I. Vaz, Jihong Kim, Kin P Cheung, Helmut Baumgart, Gary Harris
Abstract: The wide distribution of ON and OFF values and high SET current in resistive memory is attributed to the high current overshoot during the SET process. In this paper we show a circuit which is capable of precisely limiting the current during SET proc ...

18. MEMS
Topic: Semiconductors
Published: 1/12/2012
Author: Michael Gaitan
Abstract: Micro-Electro-Mechanical Systems (MEMS) are devices that are fabricated using techniques similar to those used for integrated circuits (ICs) to create micrometer-sized mechanical structures (suspended bridges, cantilevers, membranes, fluid channels ...

19. Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
Topic: Semiconductors
Published: 6/6/2011
Authors: Jason T Ryan, Liangchun (Liangchun) Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle
Abstract: The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method‰s simplicity and high sensitivity makes it a powerful too ...

20. Electrically Detected Magnetic Resonance in Dielectric Semiconductor Systems of Current Interest
Topic: Semiconductors
Published: 5/1/2011
Authors: P. M. Lenahan, Corey Cochrane, Jason P Campbell, Jason T Ryan
Abstract: Several electrically detected magnetic resonance techniques provide insight into the physical and chemical structure of technologically significant deep level defects in solid state electronics. Spin dependent recombination is sensitive to deep level ...

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