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Topic Area: Semiconductors

Displaying records 11 to 20 of 150 records.
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11. Reliability Monitoring For Highly Leaky Devices
Topic: Semiconductors
Published: 5/31/2013
Authors: Jason T Ryan, Jason P Campbell, Kin P Cheung, John S Suehle, Richard Southwick, Anthony Oates
Abstract: We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913575

12. Thermo-Mechanical Characterization of Au‹In Transient Liquid Phase Bonding Die-Attach
Topic: Semiconductors
Published: 4/9/2013
Authors: Brian Joseph Grummel, Habib A Mustain, Z. John Shen, Allen R Hefner Jr
Abstract: In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanica ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911241

13. Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide
Topic: Semiconductors
Published: 3/27/2013
Authors: Rusen Yan, Qin Q. Zhang, Oleg A Kirillov, Wei Li, James Ian Basham, Alexander George Boosalis, Xuelei X. Liang, Debdeep Jena, Curt A Richter, Alan C. Seabaugh, David J Gundlach, Huili G. Xing, Nhan V Nguyen
Abstract: The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912851

14. Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?
Topic: Semiconductors
Published: 1/31/2013
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913573

15. 2012 Updates to the International Technology Roadmap for Semiconductors (ITRS) Metrology Chapter
Topic: Semiconductors
Published: 1/1/2013
Authors: Christina Ann Hacker, Alain C. Diebold
Abstract: During 2012, the main emphasis of the Metrology Technical Working Group was to revise the Metrology Technology Requirements Tables and initiate the new text for the 2013 revision of the International Technology Roadmap for Semiconductors (ITRS). The ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912304

16. EVALUATING METHODS OF SHIPPING THIN SILICON WAFERS FOR 3D STACKED APPLICATIONS
Topic: Semiconductors
Published: 11/7/2012
Authors: Richard A Allen, Urmi Ray, Vidhya Ramachandran, Iqbal Ali, David Thomas Read, Andreas Fehk¿hrer, J¿rgen Burggraf
Abstract: An experiment was performed to develop a method for choosing appropriate packaging for shipping 300 mm silicon wafers thinned to 100 µm or less for three-dimensional stacked integrated circuits (3DS-ICs). 3DS-ICs hold the promise of improved pe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912462

17. Measurement Science for "More-Than-Moore" Technology Reliability Assessments
Topic: Semiconductors
Published: 10/12/2012
Authors: Chukwudi Azubuike Okoro, Jungjoon Ahn, Meagan V. Kelso, Pavel Kabos, Joseph J Kopanski, Yaw S Obeng
Abstract: In this paper, we will present an overview of metrology issues and some of the techniques currently under development in our group at NIST, aimed at understanding some of the potential performance limiting issues in such highly integrated systems ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911714

18. Current Compliance Circuit to Improve Variation in ON State Characteristics and to Minimize RESET Current
Topic: Semiconductors
Published: 10/7/2012
Authors: Pragya Rasmi Shrestha, Adaku Ochia, Jason P Campbell, Canute Irwin Vaz, Jihong Kim, Kin P Cheung, Helmut Baumgart, Gary Harris
Abstract: The wide distribution of ON and OFF values and high SET current in resistive memory is attributed to the high current overshoot during the SET process. In this paper we show a circuit which is capable of precisely limiting the current during SET proc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912998

19. Physical Model for Random Telegraph Noise Amplitudes and Implications
Topic: Semiconductors
Published: 6/12/2012
Authors: Richard G. Southwick, Kin P Cheung, Jason P Campbell, Serghei Drozdov, Jason T Ryan, John S Suehle, Anthony Oates
Abstract: Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911514

20. Radio Frequency and Analog/Mixed-Signal Technologies
Topic: Semiconductors
Published: 1/20/2012
Authors: Herbert S Bennett, John J. Pekarik
Abstract: This 2011 roadmap for radio frequency and analog/mixed-signal (RF and AMS) technologies presents the challenges, technology requirements, and potential solutions for the basic technology elements (transistors and passive devices). RF and AMS technolo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910916



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