NIST logo

Publications Portal

You searched on:
Topic Area: Semiconductors

Displaying records 141 to 147.
Resort by: Date / Title


141. Interconnection Continuity Test for Packaged Functional Modules
Topic: Semiconductors
Published: 3/3/1998
Author: Jan Obrzut
Abstract: We developed an electrical test to evaluate interconnections in packaged, electrostatic-discharge (ESD) protected modules. The ESD protection circuit, which in modern integrated circuits is present at every I/O as an inherent part of the chip struct ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854051

142. Building-In Reliability: Making It Work
Topic: Semiconductors
Published: 5/1/1991
Authors: Harry A. Schafft, D F Lee, P. E. Kennedy
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=6948

143. An Evaluation of Instrumental Correction Factors for Infrared Absorption Concentration Measurements,
Topic: Semiconductors
Published: 12/31/1989
Authors: D. Baghdadi, Erik M Secula
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=26303

144. Current Status of, and Future Directions in, Silicon Photodiode Self-Calibration
Topic: Semiconductors
Published: 12/31/1989
Author: Jon C Geist
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=29375

145. The Absorption Cross Section of As in Si
Topic: Semiconductors
Published: 12/31/1989
Authors: Jon C Geist, M. G. Stapelbroek, M. D. Petroff
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=10869

146. Terahertz Mobility Measurements on P3HT Films: Device Comparison, Molecular Weight and Film Processing Effects
Topic: Semiconductors
Published: Date unknown
Authors: Okan Esenturk, Joseph S Melinger
Abstract: We report the first direct comparison of relative carrier mobilities in semiconducting organic polymer films measured using non-contact optical pump terahertz probe spectroscopy to those reported in electrical device studies. Relative transient sign ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841108

147. A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets
Topic: Semiconductors
Published: 1/2/0013
Authors: Qin Q. Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A Kirillov, David J Gundlach, Curt A Richter, Nhan V Nguyen
Abstract: We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912713



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series