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Topic Area: Semiconductors

Displaying records 1 to 10 of 144 records.
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1. Constant Shape Factor Frequency Modulated Charge Pumping (FMCP)
Topic: Semiconductors
Published: 3/3/2014
Authors: Jason T Ryan, Jason P Campbell, Jibin Zou, Kin P Cheung, Richard Southwick, Anthony Oates, Rue Huang
Abstract: Abstract, We examine the seemingly frequency-dependent gate leakage current component of frequency-modulated charge pumping and show it to be a measurement artifact. If untreated, this results in erroneous defect density extractions. We present a co ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915082

2. Detection of 3D Interconnect Bonding Voids by IR Microscopy
Topic: Semiconductors
Published: 2/20/2014
Authors: Jonny H?glund, Zoltan Kiss, Gyorgy Nadudvari , Zsolt Kovacs, Szabolcs Velkei, Moore Chris, Victor Vartanian, Richard A Allen
Abstract: There are a number of factors driving 3D integration including reduced power consumption, RC delay, and form factor as well as increased bandwidth. However, before these advantages can be realized, various technical and cost hurdles must be overcom ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914474

3. Back-End-of-Line Test Structure Design and Simulation for Subsurface Metrology with Scanning Probe Microscopy
Topic: Semiconductors
Published: 12/13/2013
Authors: Lin You, Emily Hitz, Jungjoon Ahn, Yaw S Obeng, Joseph J Kopanski
Abstract: As demands in the semiconductor industry call for further miniaturization and performance enhancement of electronic systems, the traditional planar (2D) electronic interconnection and packaging technologies show their difficulties in meeting the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915013

4. Analysis of Implanted Silicon Dopant Profiles
Topic: Semiconductors
Published: 9/1/2013
Authors: B. P. Geiser, Eric B Steel, Karen T Henry, D. Olson, T.J. Prosa
Abstract: Atom probe tomography implant dose measurements are reported for National Institute of Standards and Technology Standard Reference Material 2134 (As implant). Efforts were taken to manufacture specimens with limited variation in size and shape to mi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912365

5. Reliability Monitoring For Highly Leaky Devices
Topic: Semiconductors
Published: 5/31/2013
Authors: Jason T Ryan, Jason P Campbell, Kin P Cheung, John S Suehle, Richard Southwick, Anthony Oates
Abstract: We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913575

6. Thermo-Mechanical Characterization of Au‹In Transient Liquid Phase Bonding Die-Attach
Topic: Semiconductors
Published: 4/9/2013
Authors: Brian Joseph Grummel, Habib A Mustain, Z. John Shen, Allen R Hefner Jr
Abstract: In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanica ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911241

7. Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide
Topic: Semiconductors
Published: 3/27/2013
Authors: Rusen Yan, Qin Zhang, Oleg A Kirillov, Wei Li, James Ian Basham, Alexander George Boosalis, Xuelei X. Liang, Debdeep Jena, Curt A Richter, Alan C. Seabaugh, David J Gundlach, Huili G. Xing, Nhan V Nguyen
Abstract: The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912851

8. Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?
Topic: Semiconductors
Published: 1/31/2013
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913573

9. 2012 Updates to the International Technology Roadmap for Semiconductors (ITRS) Metrology Chapter
Topic: Semiconductors
Published: 1/1/2013
Authors: Christina Ann Hacker, Alain C. Diebold
Abstract: During 2012, the main emphasis of the Metrology Technical Working Group was to revise the Metrology Technology Requirements Tables and initiate the new text for the 2013 revision of the International Technology Roadmap for Semiconductors (ITRS). The ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912304

10. EVALUATING METHODS OF SHIPPING THIN SILICON WAFERS FOR 3D STACKED APPLICATIONS
Topic: Semiconductors
Published: 11/7/2012
Authors: Richard A Allen, Urmi Ray, Vidhya Ramachandran, Iqbal Ali, David Thomas Read, Andreas Fehk¿hrer, J¿rgen Burggraf
Abstract: An experiment was performed to develop a method for choosing appropriate packaging for shipping 300 mm silicon wafers thinned to 100 µm or less for three-dimensional stacked integrated circuits (3DS-ICs). 3DS-ICs hold the promise of improved pe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912462



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