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Topic Area: Optoelectronics
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Displaying records 21 to 30 of 71 records.
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21. Dual-wavelength transfer standard for laser peak-power measurement
Topic: Optoelectronics
Published: 5/9/2011
Authors: Rodney W Leonhardt, Daniel King
Abstract: The National Institute of Standards and Technology (NIST) and the Naval Surface Warfare Center ‹ Corona Division (NSWC) have jointly developed a low-level peak-power radiometer (D-ESR) which functions as a transfer standard for measuring laser pu ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907491

22. EEEL Technical Accomplishments
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7568
Topic: Optoelectronics
Published: 3/30/2009
Author: Erik M Secula
Abstract: This document describes the technical work of the Electronics and Electrical Engineering Laboratory. In this report, you will find that EEEL researchers are developing the world's most advanced sensors, providing advanced gamma ray imagers for astro ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901701

23. Efficient Greens Function Modeling of Line and Surface Defects in Multilayered Anisotropic Elastic and Piezoelectric Material
Topic: Optoelectronics
Published: 10/2/2006
Authors: B. Yang, Vinod K Tewary
Abstract: Greens function (GF) modeling defects may take effect only if the GF as well as its various integrals over a line, a surface and/or a small volume can be efficiently evaluated. The GF itself is needed in modeling a point defect while the integrals ne ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=851356

24. Electron Microscope Study of Strain in InGaN Quantum Wells in GaN Nanowires
Topic: Optoelectronics
Published: 4/1/2009
Authors: Roy Howard Geiss, David Thomas Read
Abstract: GaN nanowires with InGaN quantum wells (QW) were grown on heated Si(111) substrates by molecular beam epitaxy (MBE) using elemental Ga and In and a radio-frequency-plasma N2 source. The growth procedures and the morphology of these nanowires have bee ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902327

25. Enhanced coupling between light and surface plasmons by nanostructured Fabry-Pérot resonator
Topic: Optoelectronics
Published: 9/26/2011
Authors: Brian S. Dennis, Vladimir A Aksyuk, Michael Haftel, Stefan T. Koev, Girsh Blumberg
Abstract: It is recognized that surface plasmons (SPs),which can be present on particulate, smooth, or corrugated metallic surfaces, have enormous potential in the fields of novel nano-optical and opto-electronic devices, as well as in spectroscopic, biologic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907837

26. Frequency Characterization of an External-Cavity Quantum Cascade Laser at 4.5 {mu}m using a Frequency Comb
Topic: Optoelectronics
Published: 1/25/2012
Authors: Kevin O. (Kevin) Knabe, Paul A Williams, Fabrizio Raphael Giorgetta, Chris Armacost, Michael Radunsky, Nathan Reynolds Newbury
Abstract: We measure the frequency noise spectrum of a free-running external-cavity quantum cascade laser at 4.5 {mu}m through sum frequency generation with a fiber frequency comb.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909814

27. Full PMD vector measured directly from modulated data using linear optical sampling
Topic: Optoelectronics
Published: 7/15/2009
Authors: Paul A Williams, Tasshi Dennis
Abstract: We demonstrate a new technique to monitor the polarization-mode dispersion in a fiber communication channel by analyzing the modulated data at the fiber output measured with Polarization-Sensitive Linear Optical Sampling (PS-LOS).
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902416

28. Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates
Topic: Optoelectronics
Published: 1/16/2013
Authors: Matthew David Brubaker, Paul Timothy Blanchard, John B Schlager, Aric Warner Sanders, Alexana Roshko, Shannon Marie Madison Duff, Jason Gray, Victor M. Bright, Norman A Sanford, Kristine A Bertness
Abstract: In this letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising light-emitting diode and photoconductive GaN nanowires. Axial p-n junction GaN nanowires were grown by molecular beam epita ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912280

29. Gallium nitride nanowire electromechanical resonators with piezoresistive readout
Topic: Optoelectronics
Published: 8/11/2011
Authors: Kristine A Bertness, Jason M. Gray, Norman A Sanford, Charles T. Rogers
Abstract: We report on the fabrication, piezoresistive readout, and frequency response of doubly-clamped c-axis gallium nitride (GaN) nanowire (NW) resonators that show mechanical quality factors exceeding 10,000. The devices are fabricated using a combination ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907884

30. High-Accuracy Photoreceiver Frequency Response Measurements at 1.55 um by Use of a Heterodyne Phase-Locked Loop
Topic: Optoelectronics
Published: 9/29/2011
Authors: Tasshi Dennis, Paul D Hale
Abstract: We demonstrate a high-accuracy heterodyne measurement system for characterizing the magnitude of the frequency response of high-speed 1.55 µm photoreceivers from 2 MHz to greater than 50 GHz. At measurement frequencies below 2 GHz, we employ a phase- ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908885



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