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Displaying records 21 to 30 of 31 records.
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21. Passive terahertz camera for standoff security screening
Topic: Optoelectronics
Published: 7/1/2010
Authors: Erich N Grossman, Charles Dietlein
Abstract: We describe the construction and performance of a passive, real-time terahertz camera based on a modular, 64-element linear array of cryogenic hotspot microbolometers. A reflective conical scanner sweeps out a 2 m ×4 m(vertical × horizontal) field of ...

22. Photonic-assisted Endoscopic Analysis of Guided W-band Pulses
Topic: Optoelectronics
Published: 8/24/2014
Authors: Jeffrey A Jargon, DongJoon Lee, JaeYong Kwon
Abstract: We present a photonic-assisted time-domain measurement technique for exploring millimeter-wave propagation through a W-band waveguide. The electric fields, guided inside a rectangular waveguide, are sampled using a sub-millimeter-scale electro-optic ...

23. Relative Photon-to-Carrier Efficiencies of Alternating Nanolayers of Zinc Phthalocyanine and C60 Multilayer Films Assessed by Time-Resolved Terahertz Spectroscopy
Topic: Optoelectronics
Published: 10/1/2009
Authors: Okan Esenturk, Joseph S Melinger, Paul A. Lane, Edwin J Heilweil
Abstract: Alternating multi-layer and 1:1 blended films of zinc phthalocyanine (ZnPc)and buckminsterfullerene (C60) were investigated as model active layers for solar cells by Time-Resolved Terahertz Spectroscopy (TRTS). Relative photon-to-carrier efficiencies ...

24. Semiconductor-based detectors
Topic: Optoelectronics
Published: 12/13/2013
Authors: Sergio Cova, Massimo Ghioni, Mark A. Itzler, Joshua C Bienfang, Alessandro Restelli
Abstract: There is nowadays a widespread and growing interest in low-level light detection and imaging. This interest is driven by the need for high sensitivity in various scientific and industrial applications such as fluorescence spectroscopy in life and ma ...

25. Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
Topic: Optoelectronics
Published: 2/12/2010
Authors: Norman A Sanford, Paul T Blanchard, Kristine A Bertness, Lorelle Mansfield, John B. Schlager, Aric Warner Sanders, Alexana Roshko, Beau Burton, Steven George
Abstract: Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift, mobility, surface band bending, and surface capture coefficie ...

26. Superconducting transition-edge sensors optimized for high-efficiency photon-number resolving detectors
Topic: Optoelectronics
Published: 4/27/2010
Authors: Adriana Eleni Lita, Brice R. Calkins, Lenson Pellouchoud, Aaron J Miller, Sae Woo Nam
Abstract: Superconducting photon detectors have emerged as a powerful new option for detecting single photons. System detection efficiency that incorporates the quantum efficiency of the device and system losses is one of the most important single-photon detec ...

27. Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages
Topic: Optoelectronics
Published: 4/18/2010
Authors: J. J. Brown, A. I. Baca, Kristine A Bertness, D. A. Dikin, R. S. Ruoff, Victor M. Bright
Abstract: This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structur ...

28. Terahertz Mobility Measurements on P3HT Films: Device Comparison, Molecular Weight and Film Processing Effects
Topic: Optoelectronics
Published: 1/17/2008
Authors: Okan Esenturk, Joseph S Melinger
Abstract: We report the first direct comparison of relative carrier mobilities in semiconducting organic polymer films measured using non-contact optical pump terahertz probe spectroscopy to those reported in electrical device studies. Relative transient sign ...

29. The effect of growth orientation and diameter on the elasticity of GaN Nanowires - a combined insitu TEM and atomistic modeling investigation
Topic: Optoelectronics
Published: 12/20/2010
Authors: Kristine A Bertness, Norman A Sanford, Albert Davydov
Abstract: We characterized the elastic properties of GaN nanowires grown along different crystallographic orientations. In situ transmission electron microscopy tensile tests were conducted using a MEMS-based nanoscale testing system. Complementary atomistic s ...

30. Transfer function analysis of measured transfer matrices
Topic: Optoelectronics
Published: 8/1/1989
Authors: Shao Yang, Igor Vayshenker, A. R. Mickelson
Abstract: Measurements of mode transfer matrices of various multimode fiber optic connectors are presented. To analyze the accuracy and repeatability of such measurements, a theoretical framework which employs mode transmission functions is derived. It is sho ...

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