NIST logo

Publications Portal

You searched on: Topic Area: Optoelectronics Sorted by: title

Displaying records 11 to 20 of 26 records.
Resort by: Date / Title

11. Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates
Topic: Optoelectronics
Published: 1/16/2013
Authors: Matthew David Brubaker, Paul Timothy Blanchard, John B Schlager, Aric Warner Sanders, Alexana Roshko, Shannon M.M. Duff, Jason Gray, Victor M. Bright, Norman A Sanford, Kristine A Bertness
Abstract: In this letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising light-emitting diode and photoconductive GaN nanowires. Axial p-n junction GaN nanowires were grown by molecular beam epita ...

12. High-Accuracy Photoreceiver Frequency Response Measurements at 1.55 um by Use of a Heterodyne Phase-Locked Loop
Topic: Optoelectronics
Published: 9/29/2011
Authors: Tasshi Dennis, Paul D Hale
Abstract: We demonstrate a high-accuracy heterodyne measurement system for characterizing the magnitude of the frequency response of high-speed 1.55 µm photoreceivers from 2 MHz to greater than 50 GHz. At measurement frequencies below 2 GHz, we employ a phase- ...

13. Low-frequency noise in gallium nitride nanowire mechanical resonators
Topic: Optoelectronics
Published: 12/7/2012
Authors: Jason Gray, Kristine A Bertness, Norman A Sanford, Charles T. Rogers
Abstract: We report on the low-frequency 1/f (flicker) parameter noise displayed by the resonance frequency and resistance of doubly clamped c-axis gallium nitride nanowire (NW) mechanical resonators. The resonators are electrostatically driven and their mech ...

14. Microwave near-field probes for photovoltaic applications
Topic: Optoelectronics
Published: 6/19/2011
Author: Joel C. Weber
Abstract: The photoresponse of three different photovoltaic Cu(In, Ga)Se^d2^ (CIGS) samples as well as GaAs and silicon bulk samples is measured using near-field scanning microwave microscopy (NSMM). Modeling predicts light-dependent conductivity values fo ...

15. Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires
Topic: Optoelectronics
Published: 8/27/2012
Authors: Christopher M. Dodson, Patrick Parkinson, Kristine A Bertness, Hannah J Joyce, Laura M Herz, Norman A Sanford, Michael B Johnston
Abstract: The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk ma ...

16. Optical fiber-coupled cryogenic radiometer with carbon nanotube absorber
Topic: Optoelectronics
Published: 4/1/2012
Authors: David J Livigni, Nathan A Tomlin, Christopher L Cromer, John H Lehman
Abstract: A cryogenic radiometer was constructed for direct-substitution optical fiber power measurements. The cavity is intended to operate at the 3 K temperature stage of a dilution refrigerator or 4.2 K stage of a liquid cryostat. The optical fiber is remov ...

17. Optical performance monitoring of (Q)PSK data channels using artificial neural networks trained with parameters derived from delay-tap asynchronous diagrams
Topic: Optoelectronics
Published: 2/15/2011
Authors: Jeffrey A Jargon, Xiaoxia Wu, Alan Willner, Loukas Paraschis
Abstract: We demonstrate a technique of using artificial neural networks trained with parameters derived from delay-tap asynchronous diagrams for optical performance monitoring of phase shift keying (PSK) data signals. We show that asynchronous diagrams from b ...

18. Passive terahertz camera for standoff security screening
Topic: Optoelectronics
Published: 7/1/2010
Authors: Erich N Grossman, Charles Dietlein
Abstract: We describe the construction and performance of a passive, real-time terahertz camera based on a modular, 64-element linear array of cryogenic hotspot microbolometers. A reflective conical scanner sweeps out a 2 m ×4 m(vertical × horizontal) field of ...

19. Relative Photon-to-Carrier Efficiencies of Alternating Nanolayers of Zinc Phthalocyanine and C60 Multilayer Films Assessed by Time-Resolved Terahertz Spectroscopy
Topic: Optoelectronics
Published: 10/1/2009
Authors: Okan Esenturk, Joseph S Melinger, Paul A. Lane, Edwin J Heilweil
Abstract: Alternating multi-layer and 1:1 blended films of zinc phthalocyanine (ZnPc)and buckminsterfullerene (C60) were investigated as model active layers for solar cells by Time-Resolved Terahertz Spectroscopy (TRTS). Relative photon-to-carrier efficiencies ...

20. Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
Topic: Optoelectronics
Published: 2/12/2010
Authors: Norman A Sanford, Paul Timothy Blanchard, Kristine A Bertness, Lorelle Mansfield, John B Schlager, Aric Warner Sanders, Alexana Roshko, Beau Burton, Steven George
Abstract: Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift, mobility, surface band bending, and surface capture coefficie ...

Search NIST-wide:

(Search abstract and keywords)

Last Name:
First Name:

Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series