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Topic Area: Optoelectronics
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Displaying records 21 to 30 of 63 records.
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21. Bilateral comparison of power measurement standards for KrF lasers between PTB and NIST
Topic: Optoelectronics
Published: 5/2/2010
Authors: Marla L Dowell, Christopher L Cromer, Darryl A. Keenan, Stefan Kuck, Friedhelm Brandt
Abstract: We report results of the first bilateral laser power comparison for 248-nm KrF excimer lasers accomplished by the National Metrology Institutes of Germany (Physikalisch-Technische Bundesanstalt, PTB) and of the United States of America (National Inst ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903905

22. Chirp characterization of external modulators with finite extinction ratio using linear optical sampling
Topic: Optoelectronics
Published: 5/1/2010
Authors: Tasshi Dennis, Paul A Williams
Abstract: We demonstrate a network monitoring technique for the frequency chirping of external modulators based on linear optical sampling. We present α parameter waveforms of digital data modulation from simultaneously measured amplitude and phase. Digit ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904102

23. Waveform metrology and a quantitative study of regularized deconvolution
Topic: Optoelectronics
Published: 5/1/2010
Authors: Paul D Hale, Andrew M Dienstfrey
Abstract: We present methodology and preliminary results of a Monte-Carlo simulation to perform a quantified analysis of regularized deconvolution in the context of full waveform metrology. We analyze the behavior of different regularized inversion methods wi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904937

24. Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages
Topic: Optoelectronics
Published: 4/18/2010
Authors: J. J. Brown, A. I. Baca, Kristine A Bertness, D. A. Dikin, R. S. Ruoff, Victor M. Bright
Abstract: This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structur ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902539

25. Direct measurement of vector polarization-mode dispersion from repeated random data by use of linear optical sampling
Topic: Optoelectronics
Published: 3/1/2010
Authors: Paul A Williams, Tasshi Dennis
Abstract: Polarization-dependent optical sampling techniques measure the complex electric field, allowing one to monitor the degrading effects of a communication channel. Here we show the ability to extract the polarization-mode dispersion of the transmission ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903751

26. Optical performance monitoring of QPSK data channels by use of neural networks trained with parameters derived from asynchronous constellation diagrams
Topic: Optoelectronics
Published: 3/1/2010
Authors: Jeffrey A Jargon, Xiaoxia Wu, Alan Willner
Abstract: We demonstrate a technique for optical performance monitoring of quadrature phase-shift keying (QPSK) data channels by simultaneously identifying optical signal-to-noise ratio (OSNR), chromatic dispersion (CD), and polarization-mode dispersion (PMD) ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904097

27. Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
Topic: Optoelectronics
Published: 2/12/2010
Authors: Norman A Sanford, Paul Timothy Blanchard, Kristine A Bertness, Lorelle Mansfield, John B Schlager, Aric Warner Sanders, Alexana Roshko, Beau Burton, Steven George
Abstract: Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift, mobility, surface band bending, and surface capture coefficie ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33133

28. Relative Photon-to-Carrier Efficiencies of Alternating Nanolayers of Zinc Phthalocyanine and C60 Multilayer Films Assessed by Time-Resolved Terahertz Spectroscopy
Topic: Optoelectronics
Published: 10/1/2009
Authors: Okan Esenturk, Joseph S Melinger, Paul A. Lane, Edwin J Heilweil
Abstract: Alternating multi-layer and 1:1 blended films of zinc phthalocyanine (ZnPc)and buckminsterfullerene (C60) were investigated as model active layers for solar cells by Time-Resolved Terahertz Spectroscopy (TRTS). Relative photon-to-carrier efficiencies ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902140

29. Traceable waveform calibration with a covariance-based uncertainty analysis
Topic: Optoelectronics
Published: 10/1/2009
Authors: Paul D Hale, Dylan F Williams, Andrew M Dienstfrey, Arkadiusz C. (Arkadiusz) Lewandowski, Tracy S. Clement, Darryl A. Keenan
Abstract: We describe a method for calibrating the voltage that a step-like pulse generator produces at a load at every time point in themeasured waveform. The calibration includes an equivalent-circuit model of the generator that can be used to determine how ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33129

30. Optical performance monitoring of PSK Data Channels using artificial neural networks trained with parameters derived from delay-tap asynchronous diagrams via balanced detection
Topic: Optoelectronics
Published: 9/20/2009
Authors: Jeffrey A Jargon, Xiaoxia Wu, Zhensheng Jia, Loukas Paraschis, Ronald Skoog, Alan Willner
Abstract: We demonstrate a technique of using artificial neural networks for optical performance monitoring of PSK data signals. Parameters for training are derived from delay-tap asynchronous diagrams using balanced detection. We also compare the results wit ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902574



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