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Displaying records 11 to 20 of 26 records.
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11. Microwave near-field probes for photovoltaic applications
Topic: Optoelectronics
Published: 6/19/2011
Author: Joel C. Weber
Abstract: The photoresponse of three different photovoltaic Cu(In, Ga)Se^d2^ (CIGS) samples as well as GaAs and silicon bulk samples is measured using near-field scanning microwave microscopy (NSMM). Modeling predicts light-dependent conductivity values fo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908757

12. A general approach to low noise readout of terahertz imaging arrays
Topic: Optoelectronics
Published: 6/16/2011
Authors: Erich N Grossman, Jonathan D Chisum, Zoya Popovic
Abstract: This article describes the theory and design of an ultra-low noise electronic readout circuit for use with room temperature video-rate terahertz imaging arrays. First, the noise characteristics of various imaging detectors, including low resistan ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908220

13. Optical performance monitoring of (Q)PSK data channels using artificial neural networks trained with parameters derived from delay-tap asynchronous diagrams
Topic: Optoelectronics
Published: 2/15/2011
Authors: Jeffrey A Jargon, Xiaoxia Wu, Alan Willner, Loukas Paraschis
Abstract: We demonstrate a technique of using artificial neural networks trained with parameters derived from delay-tap asynchronous diagrams for optical performance monitoring of phase shift keying (PSK) data signals. We show that asynchronous diagrams from b ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906680

14. The effect of growth orientation and diameter on the elasticity of GaN Nanowires - a combined insitu TEM and atomistic modeling investigation
Topic: Optoelectronics
Published: 12/20/2010
Authors: Kristine A Bertness, Norman A Sanford, Albert Davydov
Abstract: We characterized the elastic properties of GaN nanowires grown along different crystallographic orientations. In situ transmission electron microscopy tensile tests were conducted using a MEMS-based nanoscale testing system. Complementary atomistic s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906878

15. Passive terahertz camera for standoff security screening
Topic: Optoelectronics
Published: 7/1/2010
Authors: Erich N Grossman, Charles Dietlein
Abstract: We describe the construction and performance of a passive, real-time terahertz camera based on a modular, 64-element linear array of cryogenic hotspot microbolometers. A reflective conical scanner sweeps out a 2 m ×4 m(vertical × horizontal) field of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905973

16. Dark pulse quantum dot diode laser
Topic: Optoelectronics
Published: 6/7/2010
Authors: Mingming M. Feng, Kevin Lawrence Silverman, Richard P Mirin, Steven T Cundiff
Abstract: We describe an operating regime for passively mode-locked quantum dot diode laser where the output consists of a train of dark pulses, i.e., intensity dips on a continuous background. We show that a dark pulse train is a solution to the master equati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907918

17. Waveform metrology and a quantitative study of regularized deconvolution
Topic: Optoelectronics
Published: 5/1/2010
Authors: Paul D Hale, Andrew M Dienstfrey
Abstract: We present methodology and preliminary results of a Monte-Carlo simulation to perform a quantified analysis of regularized deconvolution in the context of full waveform metrology. We analyze the behavior of different regularized inversion methods wi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904937

18. Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages
Topic: Optoelectronics
Published: 4/18/2010
Authors: J. J. Brown, A. I. Baca, Kristine A Bertness, D. A. Dikin, R. S. Ruoff, Victor M. Bright
Abstract: This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structur ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902539

19. Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
Topic: Optoelectronics
Published: 2/12/2010
Authors: Norman A Sanford, Paul Timothy Blanchard, Kristine A Bertness, Lorelle Mansfield, John B Schlager, Aric Warner Sanders, Alexana Roshko, Beau Burton, Steven George
Abstract: Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift, mobility, surface band bending, and surface capture coefficie ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33133

20. Relative Photon-to-Carrier Efficiencies of Alternating Nanolayers of Zinc Phthalocyanine and C60 Multilayer Films Assessed by Time-Resolved Terahertz Spectroscopy
Topic: Optoelectronics
Published: 10/1/2009
Authors: Okan Esenturk, Joseph S Melinger, Paul A. Lane, Edwin J Heilweil
Abstract: Alternating multi-layer and 1:1 blended films of zinc phthalocyanine (ZnPc)and buckminsterfullerene (C60) were investigated as model active layers for solar cells by Time-Resolved Terahertz Spectroscopy (TRTS). Relative photon-to-carrier efficiencies ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902140



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