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Topic Area: Microelectronics
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Displaying records 21 to 30 of 41 records.
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21. Metrology for Nanosystems and Nanoelectronics Reliability Assessments
Topic: Microelectronics
Published: 8/20/2012
Authors: Yaw S Obeng, Chukwudi Azubuike Okoro, Joseph J Kopanski
Abstract: The traditional models and techniques for studying reliability in integrated circuits may not be appropriate for nanoelectronics and nanosystems. In this paper, we present an overview of a number of materials and metrology techniques currently un ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911433

22. Microwave-Based Metrology Platform Development: Application of Broad-Band RF Metrology to Integrated Circuit Reliability Analyses
Topic: Microelectronics
Published: 5/12/2014
Authors: Lin You, Chukwudi Azubuike Okoro, Jungjoon Ahn, Joseph J Kopanski, Yaw S Obeng
Abstract: In this paper we describe the development of a suite of techniques, based on the application of high frequency electromagnetic waves, to probe material and structural changes in integrated circuits under various external perturbations. We discuss how ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915367

23. Noise Characterization of Multiport Amplifiers
Topic: Microelectronics
Published: 10/1/2001
Author: James Paul Randa
Abstract: I address the issue of the definition and measurement of noise figure and parameters to characterize multiport devices, particularly differential amplifiers. A parameterization in terms of the noise matrix appears to be the most practical. the noise ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=5219

24. Noise Temperature Measurements on Wafer
Series: Technical Note (NIST TN)
Report Number: 1390
Topic: Microelectronics
Published: 3/1/1997
Author: James Paul Randa
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=11089

25. Non-destructive Measurement of the Residual Stresses in Copper Through-Silicon Vias using Synchrotron Based Micro-beam X-ray Diffraction
Topic: Microelectronics
Published: 7/1/2014
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Yaw S Obeng, Klaus Hummler, Ruqing Xu
Abstract: In this study, we report a new method for achieving depth resolved determination of the full stress tensor in buried Cu through-silicon vias (TSVs), using synchrotron based X-ray micro-diffraction technique. Two adjacent Cu TSVs were analyzed; on ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915348

26. On-Wafer Measurement of Transistor Noise Parameters at NIST
Topic: Microelectronics
Published: 4/1/2007
Authors: James Paul Randa, David K Walker
Abstract: NIST has developed the capability to measure noise parameters on a wafer int he 1-12.4 GHz range. We describe the measurement method and the uncertainty analysis and present results of measurements on a very poorly matched transistor.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32348

27. On-Wafer Measurements of Noise Temperature
Topic: Microelectronics
Published: 12/1/1999
Authors: James Paul Randa, Robert L Billinger, Joseph Paul Rice
Abstract: The NIST Noise Project has developed the theoretical formalism and experimental methods for performing accurate noise-temperature measurements on wafer. This report summarizes the theoretical formulation and describes the design, methods, and results ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=27649

28. On-Wafer Noise-Parameter Measurements at NIST
Topic: Microelectronics
Published: 7/14/2006
Authors: James Paul Randa, David K Walker
Abstract: NIST has developed the capability to measure noise parameters on a wafer int he 1-12.4 GHz range. In this paper we briefly describe the measurement methods and the uncertainty analysis and present results of measurements on a very poorly matched tran ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32179

29. Organic Electronics: Challenges and Opportunities
Topic: Microelectronics
Published: 3/31/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905389

30. Precision Measurement Method for Cryogenic Amplifier Noise Temperatures Below 5 K
Topic: Microelectronics
Published: 3/1/2006
Authors: James Paul Randa, Eyal Gerecht, Dazhen Gu, Robert L Billinger
Abstract: We report precision measurements of the effective input noise temperature of a cryogenic (liquid helium temperature) MMIC amplifier at the amplifier reference planes within the cryostat. A method is given for characterizing and removing the effect of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32017



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