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Topic Area: Microelectronics
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Displaying records 21 to 30 of 36 records.
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21. Recommended Terminology For Microwave Radiometry
Series: Technical Note (NIST TN)
Topic: Microelectronics
Published: 8/1/2008
Authors: James Paul Randa, Janne Lahtinen, Adriano Camps, A. Gasiewski, Martti Hallikainen, David Leine V, Manuel Martin-Neira, Jeff Piepmeier, Philip Rosenkranz, Christopher Ruf, James Shiue, Niels Skou
Abstract: We present recommended definitions for common terms in microwave remote-sensing radiometry. Terms are grouped into three chapters: General Terminology, Real-Aperture Radiometers, and Polarimetric Radiometry. AN alphabetical index lists the terms t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33079

22. SIMULATIONS OF NOISE-PARAMETER VERIFICATION USING CASCADE WITH ISOLATOR OR MISMATCHED TRANSMISSION LINE
Topic: Microelectronics
Published: 11/30/2007
Authors: James Paul Randa, Ken Wong, Roger Pollard
Abstract: Results are presented for simulations of a verification process for noise-parameter measurements. The verification process consists of first measuring separately both a passive device and the amplifier or transistor of interest (the DUT) and then mea ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32814

23. On-Wafer Measurement of Transistor Noise Parameters at NIST
Topic: Microelectronics
Published: 4/1/2007
Authors: James Paul Randa, David K Walker
Abstract: NIST has developed the capability to measure noise parameters on a wafer int he 1-12.4 GHz range. We describe the measurement method and the uncertainty analysis and present results of measurements on a very poorly matched transistor.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32348

24. Efficient Greens Function Modeling of Line and Surface Defects in Multilayered Anisotropic Elastic and Piezoelectric Material
Topic: Microelectronics
Published: 10/2/2006
Authors: B. Yang, Vinod K Tewary
Abstract: Greens function (GF) modeling defects may take effect only if the GF as well as its various integrals over a line, a surface and/or a small volume can be efficiently evaluated. The GF itself is needed in modeling a point defect while the integrals ne ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=851356

25. On-Wafer Noise-Parameter Measurements at NIST
Topic: Microelectronics
Published: 7/14/2006
Authors: James Paul Randa, David K Walker
Abstract: NIST has developed the capability to measure noise parameters on a wafer int he 1-12.4 GHz range. In this paper we briefly describe the measurement methods and the uncertainty analysis and present results of measurements on a very poorly matched tran ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32179

26. Terahertz radiometer design for traceable noise-temperature measurements
Topic: Microelectronics
Published: 7/14/2006
Authors: Eyal Gerecht, Dazhen Gu, James Paul Randa, David K Walker, Robert L Billinger
Abstract: We report on design of a radiometer for traceable noise-temperature measurements at terahertz frequencies, including noise measurements on cryogenic IF components, development and test of quasi-optical adapter technology, development of black body st ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32174

27. Reverse Noise Measurement and Use in Device Characterization
Topic: Microelectronics
Published: 6/10/2006
Authors: James Paul Randa, Tom McKay, Susan L. Sweeney, David K Walker, Lawrence Wagner, David R. Greenberg, Jon Tao, G. Ali Rezvani
Abstract: We review the concept of reverse noise measurements in the context of on-wafer transistor noise characterization. Several different applications of reverse noise measurements are suggested and demonstrated. Reverse measurements can be used to check m ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32218

28. Precision Measurement Method for Cryogenic Amplifier Noise Temperatures Below 5 K
Topic: Microelectronics
Published: 3/1/2006
Authors: James Paul Randa, Eyal Gerecht, Dazhen Gu, Robert L Billinger
Abstract: We report precision measurements of the effective input noise temperature of a cryogenic (liquid helium temperature) MMIC amplifier at the amplifier reference planes within the cryostat. A method is given for characterizing and removing the effect of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32017

29. INTER-LABORATORY COMPARISON OF NOISE-PARAMETER MEASUREMENTS ON CMOS DEVICES WITH 0.12 um GATE LENGTH
Topic: Microelectronics
Published: 12/1/2005
Authors: James Paul Randa, Susan L. Sweeney, Tom McKay, David K Walker, David R. Greenberg, Jon Tao, Judah Mendez, G. Ali Rezvani, John J. Pekarik
Abstract: We present results of an interlaboratory comparison of S-parameter and noise-parameter measurements performed on 0.12 {mu}m gate-length CMOS transistors. Copies of the same device were measured at three different laboratories (IBM, NIST, RFMD), and t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32120

30. Checks of Amplifier Noise-Parameter Measurements
Topic: Microelectronics
Published: 6/11/2004
Authors: James Paul Randa, David K Walker
Abstract: We propose two verification methods for measurements of noise parameters of amplifiers, particularly low-noise amplifiers (LNAs). One method is a direct measurement of the parameter Trev, the noise temperature from the amplifier input, and the compar ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31669



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