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You searched on: Topic Area: Microelectronics Sorted by: date

Displaying records 11 to 19.
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11. Analysis of Implanted Silicon Dopant Profiles
Topic: Microelectronics
Published: 9/1/2013
Authors: B. P. Geiser, Eric B Steel, Karen T Henry, D. Olson, T.J. Prosa
Abstract: Atom probe tomography implant dose measurements are reported for National Institute of Standards and Technology Standard Reference Material 2134 (As implant). Efforts were taken to manufacture specimens with limited variation in size and shape to mi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912365

12. Accelerated Stress Test Assessment of Through-Silicon Vias Using RF Signals
Topic: Microelectronics
Published: 6/1/2013
Authors: Chukwudi Azubuike Okoro, Pavel Kabos, Jan Obrzut, Klaus Hummler, Yaw S Obeng
Abstract: In this work, radio frequency (RF) signal is demonstrated as an effective metrology tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity of TSV da ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912850

13. Use of RF-Based Technique as a Metrology Tool for TSV Reliability Analysis
Topic: Microelectronics
Published: 5/28/2013
Authors: Chukwudi Azubuike Okoro, Yaw S Obeng, Jan Obrzut, Pavel Kabos, Klaus Hummler
Abstract: In this work, we used radio frequency (RF) based measurement technique is used as a prognostic tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrit ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913332

14. In Situ Gas Phase Diagnostics for Titanium Nitride Atomic Layer Deposition
Topic: Microelectronics
Published: 10/14/2011
Authors: James E Maslar, William Andrew Kimes, Brent A Sperling
Abstract: This report describes the performance of a technique for the simultaneous, rapid measurement of major gas phase species present during titanium nitride thermal atomic layer deposition involving tetrakis(dimethylamido) titanium (TDMAT) and ammonia. I ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909194

15. In Situ Gas Phase Measurements During Metal Alkylamide Atomic Layer Deposition
Topic: Microelectronics
Published: 7/12/2011
Authors: James E Maslar, William Andrew Kimes, Brent A Sperling
Abstract: Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908672

16. Challenges and Opportunities of Organic Electronics
Topic: Microelectronics
Published: 4/2/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905387

17. Organic Electronics: Challenges and Opportunities
Topic: Microelectronics
Published: 3/31/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905389

18. Efficient Greens Function Modeling of Line and Surface Defects in Multilayered Anisotropic Elastic and Piezoelectric Material
Topic: Microelectronics
Published: 10/2/2006
Authors: B. Yang, Vinod K Tewary
Abstract: Greens function (GF) modeling defects may take effect only if the GF as well as its various integrals over a line, a surface and/or a small volume can be efficiently evaluated. The GF itself is needed in modeling a point defect while the integrals ne ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=851356

19. Characterization of On-Wafer Diode Noise Sources
Topic: Microelectronics
Published: 6/1/1998
Authors: James Paul Randa, David K Walker, Lawrence P. Dunleavy, Robert L. Billinger, John Rice
Abstract: A set of wafer probeable diode noise source transfer standards are characterized using on-wafer noise temperature methods developed recently at the National Institute of Standards and Technology (NIST). This paper reviews the methods for accurat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=27897



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