NIST logo

Publications Portal

You searched on: Topic Area: Microelectronics

Displaying records 11 to 17.
Resort by: Date / Title

11. Use of RF-Based Technique as a Metrology Tool for TSV Reliability Analysis
Topic: Microelectronics
Published: 5/28/2013
Authors: Chukwudi Azubuike Okoro, Yaw S Obeng, Jan Obrzut, Pavel Kabos, Klaus Hummler
Abstract: In this work, we used radio frequency (RF) based measurement technique is used as a prognostic tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrit ...

12. In Situ Gas Phase Diagnostics for Titanium Nitride Atomic Layer Deposition
Topic: Microelectronics
Published: 10/14/2011
Authors: James E Maslar, William Andrew Kimes, Brent A Sperling
Abstract: This report describes the performance of a technique for the simultaneous, rapid measurement of major gas phase species present during titanium nitride thermal atomic layer deposition involving tetrakis(dimethylamido) titanium (TDMAT) and ammonia. I ...

13. In Situ Gas Phase Measurements During Metal Alkylamide Atomic Layer Deposition
Topic: Microelectronics
Published: 7/12/2011
Authors: James E Maslar, William Andrew Kimes, Brent A Sperling
Abstract: Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical ...

14. Challenges and Opportunities of Organic Electronics
Topic: Microelectronics
Published: 4/2/2010
Author: Calvin Chan

15. Organic Electronics: Challenges and Opportunities
Topic: Microelectronics
Published: 3/31/2010
Author: Calvin Chan

16. Efficient Greens Function Modeling of Line and Surface Defects in Multilayered Anisotropic Elastic and Piezoelectric Material
Topic: Microelectronics
Published: 10/2/2006
Authors: B. Yang, Vinod K Tewary
Abstract: Greens function (GF) modeling defects may take effect only if the GF as well as its various integrals over a line, a surface and/or a small volume can be efficiently evaluated. The GF itself is needed in modeling a point defect while the integrals ne ...

17. Characterization of On-Wafer Diode Noise Sources
Topic: Microelectronics
Published: 6/1/1998
Authors: James Paul Randa, David K Walker, Lawrence P. Dunleavy, Robert L. Billinger, John Rice
Abstract: A set of wafer probeable diode noise source transfer standards are characterized using on-wafer noise temperature methods developed recently at the National Institute of Standards and Technology (NIST). This paper reviews the methods for accurat ...

Search NIST-wide:

(Search abstract and keywords)

Last Name:
First Name:

Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series