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Topic Area: Microelectronics

Displaying records 21 to 30 of 39 records.
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21. Band Offsets of Al^d2^O^d3^ / In^d1-x^Ga^dx^As (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing
Topic: Microelectronics
Published: 2/2/2010
Authors: Nhan V Nguyen, Min Xu, Oleg A Kirillov, Pei D Ye, C Wang, Kin P Cheung, John S Suehle
Abstract: Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903535

22. Wire Bonding in Microelectronics
Topic: Microelectronics
Published: 1/4/2010
Author: George Gibson Harman
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905904

23. Advanced Metrology for Nanoelectronics at the National Institute of Standards and Technology
Topic: Microelectronics
Published: 3/11/2009
Authors: Joaquin (Jack) Martinez, Yaw S Obeng, Stephen Knight
Abstract: A broad range of programs at the National Institute of Standards and Technology address critical metrology and characterization challenges facing the nanoelectronics industry. A brief history of the program will be included. From these programs we ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901409

24. Recommended Terminology For Microwave Radiometry
Series: Technical Note (NIST TN)
Topic: Microelectronics
Published: 8/1/2008
Authors: James Paul Randa, Janne Lahtinen, Adriano Camps, A. Gasiewski, Martti Hallikainen, David Leine V, Manuel Martin-Neira, Jeff Piepmeier, Philip Rosenkranz, Christopher Ruf, James Shiue, Niels Skou
Abstract: We present recommended definitions for common terms in microwave remote-sensing radiometry. Terms are grouped into three chapters: General Terminology, Real-Aperture Radiometers, and Polarimetric Radiometry. AN alphabetical index lists the terms t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33079

25. SIMULATIONS OF NOISE-PARAMETER VERIFICATION USING CASCADE WITH ISOLATOR OR MISMATCHED TRANSMISSION LINE
Topic: Microelectronics
Published: 11/30/2007
Authors: James Paul Randa, Ken Wong, Roger Pollard
Abstract: Results are presented for simulations of a verification process for noise-parameter measurements. The verification process consists of first measuring separately both a passive device and the amplifier or transistor of interest (the DUT) and then mea ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32814

26. On-Wafer Measurement of Transistor Noise Parameters at NIST
Topic: Microelectronics
Published: 4/1/2007
Authors: James Paul Randa, David K Walker
Abstract: NIST has developed the capability to measure noise parameters on a wafer int he 1-12.4 GHz range. We describe the measurement method and the uncertainty analysis and present results of measurements on a very poorly matched transistor.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32348

27. Efficient Greens Function Modeling of Line and Surface Defects in Multilayered Anisotropic Elastic and Piezoelectric Material
Topic: Microelectronics
Published: 10/2/2006
Authors: B. Yang, Vinod K Tewary
Abstract: Greens function (GF) modeling defects may take effect only if the GF as well as its various integrals over a line, a surface and/or a small volume can be efficiently evaluated. The GF itself is needed in modeling a point defect while the integrals ne ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=851356

28. On-Wafer Noise-Parameter Measurements at NIST
Topic: Microelectronics
Published: 7/14/2006
Authors: James Paul Randa, David K Walker
Abstract: NIST has developed the capability to measure noise parameters on a wafer int he 1-12.4 GHz range. In this paper we briefly describe the measurement methods and the uncertainty analysis and present results of measurements on a very poorly matched tran ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32179

29. Terahertz radiometer design for traceable noise-temperature measurements
Topic: Microelectronics
Published: 7/14/2006
Authors: Eyal Gerecht, Dazhen Gu, James Paul Randa, David K Walker, Robert L Billinger
Abstract: We report on design of a radiometer for traceable noise-temperature measurements at terahertz frequencies, including noise measurements on cryogenic IF components, development and test of quasi-optical adapter technology, development of black body st ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32174

30. Reverse Noise Measurement and Use in Device Characterization
Topic: Microelectronics
Published: 6/10/2006
Authors: James Paul Randa, Tom McKay, Susan L. Sweeney, David K Walker, Lawrence Wagner, David R. Greenberg, Jon Tao, G. Ali Rezvani
Abstract: We review the concept of reverse noise measurements in the context of on-wafer transistor noise characterization. Several different applications of reverse noise measurements are suggested and demonstrated. Reverse measurements can be used to check m ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32218



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