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Topic Area: Microelectronics

Displaying records 1 to 10 of 27 records.
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1. A high-bandwidth electromagnetic MEMS motion stage for scanning applications
Topic: Microelectronics
Published: 8/23/2012
Authors: Young M. Choi, Nicholas G Dagalakis, Jason John Gorman, Seung Ho Yang, Yong Sik Kim, Jae Myung Yoo
Abstract: This paper presents the design, fabrication and experimental results of an out-of-plane electromagnetic motion stage. The combination of electromagnetic actuation and a flexure-supported platform enables bidirectional motion with high precision as ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910087

2. In Situ Gas Phase Diagnostics for Titanium Nitride Atomic Layer Deposition
Topic: Microelectronics
Published: 10/14/2011
Authors: James E Maslar, William Andrew Kimes, Brent A Sperling
Abstract: This report describes the performance of a technique for the simultaneous, rapid measurement of major gas phase species present during titanium nitride thermal atomic layer deposition involving tetrakis(dimethylamido) titanium (TDMAT) and ammonia. I ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909194

3. In Situ Gas Phase Measurements During Metal Alkylamide Atomic Layer Deposition
Topic: Microelectronics
Published: 7/12/2011
Authors: James E Maslar, William Andrew Kimes, Brent A Sperling
Abstract: Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908672

4. Flip Chip Lamination to electrically contact organic single crystals on flexible substrates
Topic: Microelectronics
Published: 4/20/2011
Authors: Oana Jurchescu, Brad Conrad, Christina Ann Hacker, David J Gundlach, Curt A Richter
Abstract: The fabrication of top metal contacts for organic electronics represents a challenge and has important consequences for electrical properties of such systems. We report a low cost and non-destructive printing process, Flip Chip Lamination (FCL), to f ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907524

5. The Case for Innovations in Photovoltaics: the Nonmaterial Edge
Topic: Microelectronics
Published: 1/26/2011
Authors: Yaw S Obeng, Kathleen Richardson
Abstract: The limitations of current thin film and the gaps to cost efficient photovoltaic (PV) cells will be discussed in the presentation. This discussion will suggest ways to improve PV cell performance through the use of reduced dimension materials (e.g., ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907680

6. Separation and Metrology of Nanoparticles by Nanofluidic Size Exclusion
Topic: Microelectronics
Published: 8/11/2010
Authors: Samuel M Stavis, Jon C Geist, Michael Gaitan
Abstract: A nanofluidic approach to the separation and metrology of nanoparticles is demonstrated. Advantages of this approach include nanometer-scale resolution, nanometer-scale to submicrometer-scale range, mitigation of hydrodynamic and diffusional limitat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904215

7. Challenges and Opportunities of Organic Electronics
Topic: Microelectronics
Published: 4/2/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905387

8. Organic Electronics: Challenges and Opportunities
Topic: Microelectronics
Published: 3/31/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905389

9. Band Offsets of Al^d2^O^d3^ / In^d1-x^Ga^dx^As (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing
Topic: Microelectronics
Published: 2/2/2010
Authors: Nhan V Nguyen, Min Xu, Oleg A Kirillov, Pei D Ye, C Wang, Kin P Cheung, John S Suehle
Abstract: Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903535

10. Wire Bonding in Microelectronics
Topic: Microelectronics
Published: 1/4/2010
Author: George Gibson Harman
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905904