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You searched on: Topic Area: Advanced Materials Sorted by: title

Displaying records 11 to 20.
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11. High performance airbrushed organic thin film transistors
Topic: Advanced Materials
Published: 3/30/2010
Authors: Calvin Chan, Lee J Richter, Brad Anthony Dinardo, Cherno Jaye, Brad Conrad, Hyun Wook Ro, David Germack, Daniel A Fischer, Dean M DeLongchamp, David J Gundlach
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904576

12. Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: role of substrate coupling
Topic: Advanced Materials
Published: 7/1/2014
Authors: Randolph E Elmquist, Chiashain Chuang, Yanfei Yang, Lung-I Huang, Chi-Te Liang
Abstract: The development of graphene electronic devices produced by industry will rely on efficient control of heat transfer from the graphene sheet to its environment. In nanoscale devices, heat is one of the major obstacles to the operation of such devices ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916191

13. Insulator-quantum Hall transition in monolayer epitaxial graphene
Topic: Advanced Materials
Published: 7/22/2016
Authors: Lung-I Huang, Yanfei Yang, Randolph E Elmquist, Shun-Tsung Lo, Fan-Hung H. Liu, Chi-Te Laing
Abstract: We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We observe temperature (T)-independent crossing points in the longitudinal resistivity (rho)sub(xx), which are signatures of th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=917328

14. Investigation of SiO2/HfO2 stacks for flash memory applications
Topic: Advanced Materials
Published: 4/28/2011
Authors: Nhan V Nguyen, Bashwar Chakrabarti
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908443

15. Measurement of orbital asymmetry and strain in Co^d90^Fe^d10^/Ni multilayers and alloys: Origins of perpendicular anisotropy
Topic: Advanced Materials
Published: 2/13/2013
Authors: Justin M Shaw, Hans Toya Nembach, Thomas J Silva
Abstract: We use broadband ferromagnetic resonance spectroscopy and x-ray diffraction to investigate the fundamental origin of perpendicular anisotropy in Co^d90^Fe^d10^/Ni multilayers. By careful evaluation of the spectroscopic {I}g{/I}-factor, we determine ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913103

16. Microstructural Evolution of Pd-doped Nanoscale Zero-valent Iron (nZVI) Particles in Aqueous Media and Implications for Particle Reactivity
Topic: Advanced Materials
Published: 5/6/2010
Authors: Andrew A Herzing, Weile Yan, Christopher J. Kiely, Wei-xian Zhang
Abstract: Palladized zero-valent iron nanoparticles have been frequently employed to achieve enhanced treatment of halogenated organic compounds. However no detailed study has been published on their structures, especially the distribution of palladium within ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904152

17. Organic Electronics: Challenges and Opportunities
Topic: Advanced Materials
Published: 3/31/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905389

18. Quantized Hall resistance in large-scale monolayer graphene
Topic: Advanced Materials
Published: 11/29/2015
Authors: Yanfei Yang, Chiashain Chuang, Chieh Wen Liu, Randolph E Elmquist
Abstract: Abstract: Graphene is an atomic-thickness carbon lattice that can be exfoliated from solid graphite or grown using high temperature processing methods on a variety of substrates. Many practical applications of large-area graphene, however, are limite ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=919094

19. Surface conductance of graphene from non-contact resonant cavity
Topic: Advanced Materials
Published: 3/15/2016
Authors: Jan Obrzut, Caglar Dogu Emiroglu, Oleg A Kirillov, Yanfei Yang, Randolph E Elmquist
Abstract: A method is established to reliably determine surface conductance of single-layer or multi-layer atomically thin nano-carbon graphene structures. These can be synthesized by chemical vapor deposition (CVD), epitaxial growth on silicon carbide (SiC), ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=919244

20. Tunable electrical conductivity in metal-organic framework thin film devices
Topic: Advanced Materials
Published: 1/3/2014
Authors: Albert A. Talin, Andrea Centrone, Alexandra C. Ford, Michael E Foster, Vitalie Stavila, Paul M Haney, Robert Adam Kinney, Veronika A Szalai, Farid El Gabaly, Heayoung Yoon, Francois Leonard, Mark Allendorf
Abstract: We report a strategy for realizing tunable electrical conductivity in MOFs in which the nanopores are infiltrated with redox-active, conjugated guest molecules. This approach is demonstrated using thin-film devices of the MOF Cu3(BTC)2 (also known as ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913452



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