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Topic Area: Spectroscopy

Displaying records 51 to 60 of 104 records.
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51. Ultrafast Transient THz Spectroscopy of Azobenzene
Topic: Spectroscopy
Published: 1/1/2005
Authors: Okan Esenturk, Edwin J Heilweil
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=104459

52. Structure of Polystyrene at the Interface With Various Liquids
Topic: Spectroscopy
Published: 9/4/2004
Authors: Clayton S. Yang, P T. Wilson, Lee J Richter
Abstract: Vibrationally resonant sum frequency generation (VR-SFG) is used to determine the structure of the phenyl side groups of deuterated polystyrene at the liquid/solid interface for the nonsolvent liquids: hexane, methanol, ethanol, glycerol, and water. ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831332

53. Temperature-induced structural changes in putidaredoxin: a circular dichroism and UV-VIS absorption study
Topic: Spectroscopy
Published: 6/1/2004
Authors: Vytautas Reipa, Marcia J Holden, M P. Mayhew, V L. Vilker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903187

54. Quantum Mirages in Scanning Tunneling Spectroscopy of Kondo Adsorbates: Vibrational Signatures
Topic: Spectroscopy
Published: 12/1/2003
Authors: John William Gadzuk, M Plihal
Abstract: Scanning tunneling microscopy/spectroscopy on Kondo systems consisting of magnetic atoms adsorbed upon non-magnetic metal surfaces has demonstrated the ability of suitable two-dimensional nanostructures (such as quantum corrals) to influence the surf ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831278

55. Structural Alterations of the Heme Environment of Cytochrome P450cam and the Y96F Mutant as Deduced by Resonance Raman Spectroscopy
Topic: Spectroscopy
Published: 1/1/2003
Authors: G Niaura, Vytautas Reipa, M P. Mayhew, Marcia J Holden, V L. Vilker
Abstract: Resonance Raman spectroscopy at 2.5 cm-1 resolution was used to probe differences in wild type and Y96F mutant P450cam (CYP101), both with and without bound camphor or styrene substrates. In the substrate-free state, the spin state equilibrium is sh ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830245

56. Preface to Cavity-Enhanced Spectroscopies
Topic: Spectroscopy
Published: 12/1/2002
Authors: Roger D van Zee, J P. Looney
Abstract: This submission is an introduction to Cavity-Enhanced Spectroscopy, a book which is to be published by Academic Press.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830789

57. Grazing Incidence X-Ray Photoelectron Spectroscopy: A Method to Study Gate Dielectric Films on Si
Topic: Spectroscopy
Published: 11/1/2002
Authors: Terrence J Jach, E Landree
Abstract: Grazing Incidence X-ray Photoelectron Spectroscopy (GIXPS) is a method that offers promise as a non-destructive technique to measure the thickness and chemistry of ultrathin gate dielectric films. It combines aspects of x-ray reflectivity and convent ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831285

58. The NIST Electron Effective-Attenuation-Length Database
Series: OTHER
Topic: Spectroscopy
Published: 2/1/2002
Authors: Cedric John Powell, Aleksander Jablonski
Abstract: The NIST Electron Effective-Attenuation-Length Database provides values of electron effective attenuation lengths (EALs) in solid elements and compounds at selected electron energies between 50 eV and 2,000 eV. The database was designed mainly to pr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831244

59. Influence of Elastic-Electron Scattering on Measurements of Sillicon Dioxide Film Thicknesses by X-Ray Photoelectron Spectroscopy
Topic: Spectroscopy
Published: 9/1/2001
Authors: Cedric John Powell, Aleksander Jablonski
Abstract: We investigate the systematic error due to neglet of elastic scattering of photoelectrons in measurements of the thicknesses of thin films of SiO^d2^ on Si by x-ray photoelectron spectroscopy (XPS). Calulations were made of substrate Si 2p photoelec ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831215

60. Comparisons of Calculated and Measured Effective Attenuation Lengths for Silicon Dioxide Over a Wide Electron Energy Range
Topic: Spectroscopy
Published: 8/1/2001
Authors: Cedric John Powell, Aleksander Jablonski
Abstract: We report calculations of effective attenuation lengths (EALs) for Si 2p photoelectrons in silicon dioxide at photoelectron energies between 82 and 1385 eV. These EALs are compared with measured values reported recently by Shimada et al. [Surf. Inte ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831218



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