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Topic Area: Nanotechnology
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Displaying records 321 to 330 of 382 records.
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321. Strategies for Nanoscale Contour Metrology using Critical Dimension Atomic Force Microscopy
Topic: Nanotechnology
Published: 9/30/2011
Authors: Ndubuisi George Orji, Ronald G Dixson, Andras Vladar, Michael T Postek
Abstract: Contour metrology is one of the techniques used to verify optical proximity correction (OPC) in lithography models. The use of these methods, which are known as resolution enhancement techniques (RET), are necessitated by the continued decrease in f ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909559

322. Structural and Electrical Characterization of Flip Chip Laminated omega-functionalized thiols
Topic: Nanotechnology
Published: 4/15/2010
Authors: Mariona Coll Bau, Oana Jurchescu, Nadine Emily Gergel-Hackett, Curt A Richter, Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907067

323. Studying Long-term Performance of a Nano-ZnO filled Waterborne Polyurethane Coating using Spectroscopies and Microscopies
Topic: Nanotechnology
Published: 9/9/2009
Authors: Xiaohong Gu, Dongmei Zhe, Stephanie S Watson, Guodong Chen, Minhua Zhao, Paul E Stutzman, Deborah L Stanley, Tinh Nguyen, Joannie W Chin, Jonathan W. (Jonathan W.) Martin
Abstract: Although inorganic UV absorbers such as zinc oxide (ZnO) and cerium oxide (CeO2) exhibit numerous advantages compared to organic UV absorbers, the mechanisms of how these nanoparticles affect the long-term performance of polymeric coatings are less t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903215

324. Summary of ISO/TC 201 Standard: XIII. ISO 18114:2003 - Surface Chemical Analysis - Secondary Ion Mass Spectrometry - Determination of Relative Sensitivity Factors From Ion-Implanted Reference Materials
Topic: Nanotechnology
Published: 3/1/2006
Author: David S Simons
Abstract: Ion-implanted materials are commonly used in secondary-ion mass spectrometry for the calibration of instruments. This international Standard was prepared to provide a uniform method for determining the relative sensitivity factor (RSF) of an element ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831402

325. Super-hydrophobic and/or Super-hydrophilic Surfaces Made by Plasma Process
Topic: Nanotechnology
Published: 5/8/2009
Authors: Lei Chen, Gerard Henein, James Alexander Liddle
Abstract: In this paper, a simple, fast, all-plasma surface modification (APSM) process, which can form super-hydrophobic and/or super-hydrophilic surfaces is introduced. The APSM process includes plasma-induced surface nano-pattern formation, substrate etchin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901919

326. Surface Analysis Studies of Yield Enhancements in Secondary Ion Mass Spectrometry by Polyatomic Projectiles
Topic: Nanotechnology
Published: 5/1/2001
Authors: E Fuoco, John G Gillen, M Wijesundara, William E Wallace III, L Hanley
Abstract: In this paper examine the mechanism of secondary ion yield enhancements previously observed for polyatomic projectiles by measuring the weight loss, volume loss, and surface composition of poly(methylmethacrylate) (PMMA) films sputtered by keV SF^d5^ ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831207

327. Surface Effects on the Elastic Modulus of Te Nanowires
Topic: Nanotechnology
Published: 6/17/2008
Authors: Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Mark D Vaudin, Leonid A Bendersky, Robert Francis Cook
Abstract: Nondestructive elastic property measurements have been performed on Te nanowires with diameters in the range 20 150 nm. By using contact resonance atomic force microscopy, the elastic indentation modulus perpendicular to the prismatic facets of the n ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=851078

328. Surface Potential Imaging of Solution Processable Acene-Based Thin Film Transistors
Topic: Nanotechnology
Published: 12/2/2008
Authors: Lucile C. Teague, Behrang H Hamadani, John E Anthony, David J Gundlach, James G. Kushmerick, Sanker Subramanian, Thomas Jackson, Curt A Richter, Oana Jurchescu
Abstract: We report scanning Kelvin probe microscopy (SKPM) of electrically biased difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin film transistors. SKPM reveals the relationship between the diF-TESADT film structure and device ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831446

329. Surface-directed Growth of Nanowires: A Scalable Platform for Nanodevice Fabrication
Topic: Nanotechnology
Published: 7/11/2011
Author: Babak Nikoobakht
Abstract: Optical lithography continues to be the popular technique for further miniaturization of electronic circuitry and its components. However, as further device miniaturization continues, complexity of pattern generation and cost increase; therefore th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908140

330. Surface-plasmon-enhanced electric fields in two-dimensional arrays of gold nanodisks
Topic: Nanotechnology
Published: 8/4/2008
Authors: Ward L Johnson, Sudook A Kim, Zhandos Utegulov, B. T. Draine
Abstract: Electric-field distributions in two-dimensional arrays of gold nanodisks on Si3N4 membranes are modeled, using the discrete-dipole approximation, as a function of nanodisk diameter (20 − 50 nm), height (10 − 100 nm), ratio of the array sp ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854107



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