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Topic Area: Nanotechnology
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Displaying records 311 to 320 of 389 records.
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311. SRM 482 Revisited After 30 Years
Topic: Nanotechnology
Published: 8/1/2001
Authors: Eric S Windsor, R Carlton, Scott A Wight, C Lyman
Abstract: The National Institute of Standards and Technology's (NIST) Standard Reference Material (SRM) 482 was issued by The National Bureau of Standards (NBS) in 1969 and has been continuously available to the public for over 30 years [1]. The standard ...

312. Isotopic Ratio Measurements by Time-of-Flight Secondary Ion Mass Spectrometry
Topic: Nanotechnology
Published: 7/1/2001
Authors: Albert J. Fahey, S R. Messenger
Abstract: Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) is often considered synonymous with SIMS in the static limit where the ion fluence on the sample surface is so low that damage is negligible. For this same reason its use in measuring isotopi ...

313. Simultaneous Multianalyte Detection with a Nanometer-Scale Pore
Topic: Nanotechnology
Published: 5/15/2001
Authors: John J Kasianowicz, S. E. Henrickson, H H. Weetall, B Robertson

314. Radioactive Particle Analysis by Digital Autoradiography
Topic: Nanotechnology
Published: 5/1/2001
Authors: Cynthia J Zeissler, Richard Mark Lindstrom, J P McKinley
Abstract: We have been exploring ways to evaluate the activity of radioactive particles that have been detected by phosphor plate digital autoradiography based on photostimulated luminescence (PSL). A PSL system with 25{mu} pixel digitization has been applied ...

315. Surface Analysis Studies of Yield Enhancements in Secondary Ion Mass Spectrometry by Polyatomic Projectiles
Topic: Nanotechnology
Published: 5/1/2001
Authors: E Fuoco, John G Gillen, M Wijesundara, William E Wallace III, L Hanley
Abstract: In this paper examine the mechanism of secondary ion yield enhancements previously observed for polyatomic projectiles by measuring the weight loss, volume loss, and surface composition of poly(methylmethacrylate) (PMMA) films sputtered by keV SF^d5^ ...

316. Negative Cesium Sputter Ion Source for Generating Cluster Primary Ion Beams for Secondary Ion Mass Spectrometry Analysis
Topic: Nanotechnology
Published: 4/1/2001
Authors: John G Gillen, R Lance King, B Freibaum, R Lareau, J Bennett, F Chmara
Abstract: The use of a cluster (or polyatomic) primary ion projectile for organic SIMS has been demonstrated to increase the yield of characteristic molecular secondary ions, more efficiently desorb higher molecular weight species and reduce the accumulation o ...

317. Block Copolymer Thin Films: Physics and Applications
Topic: Nanotechnology
Published: 2/15/2001
Authors: Michael J Fasolka, A M Mayes
Abstract: A two-part review of research concerning block copolymer thin films is presented. The first section summarizes experimental and theoretical studies of the fundamental physics of these systems, concentrating upon the forces that govern film morpholog ...

318. Fabrication and Electron Microprobe Characterization of Barium-Strontium-Titanate (BST) Films
Topic: Nanotechnology
Published: 2/1/2001
Authors: Ryna B. Marinenko, J T. Armstrong, Debra L Kaiser, Joseph J. Ritter, Peter K. Schenck, C P. Bouldin, J Blendell, Igor Levin
Abstract: Barium strontium titanate (BST) thin films of varying composition and thickness (5nm to 400nm) on (100)Si or Pt/(100)Si substrates were measured using an electron microprobe analyzer with wavelength dispersive x-ray spectrometers. Most of the films ...

319. Cluster Primary Ion Beam Secondary Ion Mass Spectrometry for Semiconductor Characterization
Topic: Nanotechnology
Published: 1/1/2001
Authors: John G Gillen, S V. Roberson, Albert J. Fahey, Marlon L Walker, J Bennett, R Lareau
Abstract: We are evaluating the use of polyatomic and cluster primary ion beams for characterization of semiconductor materials by secondary ion mass spectrometry using both magnetic sector and time-of-flight SIMS instruments. Primary ion beams of SF^d5^+, ...

320. P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy
Topic: Nanotechnology
Published: 1/1/2001
Authors: David S Simons, P Chi, S L Rommel, T E Dillon, K D Hobart, P E Thompson, P R Berger
Abstract: Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type {delta}-doped injectors separated by an ...

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