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You searched on: Topic Area: Nanotechnology

Displaying records 91 to 100 of 203 records.
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91. MOSFETs made from GaN nanowires with fully conformal cylindrical gates
Topic: Nanotechnology
Published: 12/2/2011
Authors: Paul T Blanchard, Kristine A Bertness, Todd E Harvey, Aric Warner Sanders, Norman A Sanford, Steven M. George, Dragos Seghete
Abstract: We report novel metal-oxide-semiconductor field effect transistors (MOSFETs) based on individual gallium nitride (GaN) nanowires with fully conformal cylindrical gates. The W/Al^d2^O^d3^ gates were deposited by atomic layer deposition. Reverse-bi ...

92. Spectral Line-by-Line Pulse Shaping of On-Chip Microresonator Frequency Combs
Topic: Nanotechnology
Published: 12/1/2011
Authors: Fahmida Ferdous, Houxun H. Miao, Daniel E. Leaird, Kartik A Srinivasan, Jian Wang, Lei Chen, Leo Tom Varghese, Andrew M Weiner
Abstract: We report, for the first time to the best of our knowledge, spectral phase characterization and line-by-line pulse shaping of an optical frequency comb generated by nonlinear wave mixing in a micro-ring resonator. The comb is compressed to a train o ...

93. Gallium nitride nanowires achieve crystalline perfection
Topic: Nanotechnology
Published: 10/25/2011
Authors: Kristine A Bertness, Norman A Sanford, John B. Schlager
Abstract: A new method of growing a common semiconductor provides an avenue for fabricating perfect crystals in a form that takes advantage of their unique optical, electrical, and mechanical properties.

94. Far-field superfocusing with optical fiber based surface plasmonic lens made of nanoscale concentric annular slits
Topic: Nanotechnology
Published: 9/30/2011
Authors: Yuxiang Liu, Hua Xu, Felix Stief, Nikolai B Zhitenev, Miao Yu
Abstract: We present experimental demonstration of three-dimensional superfocusing by using an optical fiber based surface plasmonic (SP) lens with nanoscale concentric annular slits. To the best of our knowledge, this is the first time that a far-field, sub-d ...

95. Strategies for Nanoscale Contour Metrology using Critical Dimension Atomic Force Microscopy
Topic: Nanotechnology
Published: 9/30/2011
Authors: Ndubuisi George Orji, Ronald G Dixson, Andras Vladar, Michael T Postek
Abstract: Contour metrology is one of the techniques used to verify optical proximity correction (OPC) in lithography models. The use of these methods, which are known as resolution enhancement techniques (RET), are necessitated by the continued decrease in f ...

96. Prototype cantilevers for quantitative lateral force microscopy
Topic: Nanotechnology
Published: 9/27/2011
Authors: Mark Reitsma, Richard Swift Gates, Lawrence H Friedman, Robert Francis Cook
Abstract: Prototype cantilevers that enable quantitative micro- to nano-scale surface force measurements using contact-mode atomic force microscopy (AFM) are presented. The ,HammerheadŠ cantilevers allow precise optical lever system calibrations for cantilever ...

97. Rectangular Scale-Similar Etch Pits in Monocrystalline Diamond
Topic: Nanotechnology
Published: 9/15/2011
Authors: Craig Dyer McGray, Richard A Allen, Marc J Cangemi, Jon C Geist
Abstract: Etching of monocrystalline diamond in oxygen and water vapor at 1100° C through small pores in a silicon nitride film produced smooth-walled rectangular cavities. The cavities were imaged by electron microscope and measured by interferometric microsc ...

98. Three dimensional aspects of droplet coalescence during dropwise condensation on superhydrophobic surfaces
Topic: Nanotechnology
Published: 8/24/2011
Authors: Konrad Rykaczewski, John Henry j Scott, Sukumar Rajauria, W Robert Ashurst, Jeff Chinn, Amy Chinn, Wanda Jones
Abstract: We report formation of nano-to-microscale satellite droplets in the geometrical shadow of high contact angle primary drops during dropwise water condensation on a nanostructured superhydrophobic surface. The primary drops contribute to the heat tran ...

99. GaN Nanowires Grown by Molecular Beam Epitaxy
Topic: Nanotechnology
Published: 8/1/2011
Authors: Kristine A Bertness, Norman A Sanford, Albert Davydov
Abstract: The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include the absence of residual strain, exclusion of most extended defects, long photoluminescence lifetime, low surface recombination velocity,and ...

100. Lithography and Chemical Modeling of Acid Amplfiers for Use in EUV Photoresists
Topic: Nanotechnology
Published: 7/28/2011
Authors: Kirstin Kruger, craig higgins, Gregg M. Gallatin, Robert Brainard
Abstract: We postulate that the best way to simultaneously improve resolution, line edge roughness (LER), and sensitivity all in EUV resists is to increase the number of acid molecules generated per absorbed photon. In previous work, we showed that acid ampli ...

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