NIST logo

Publications Portal

You searched on: Author: Angela Hight Walker

Displaying records 1 to 10 of 77 records.
Resort by: Date / Title


1. Influence of Metal¿MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts
Published: 12/16/2014
Authors: Hui H. Yuan, Guangjun Cheng, Lin You, Haitao Li, Hao Zhu, wei li, Joseph J Kopanski, Yaw S Obeng, Angela R Hight Walker, David J Gundlach, Curt A Richter, D. E Ioannou, Qiliang Li
Abstract: In this work, we present a study of enhancing MoS2 transistor performance by using proper metal contact. We found that the on-state current of MoS2 field-effect transistors with 30 nm Au/ 30 nm Ag contacts is enhanced more than 60 times and the subth ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916101

2. High-Speed Coherent Raman Fingerprint Imaging of Biological Tissues
Published: 7/20/2014
Authors: Charles H Camp, Young Jong Lee, John Michael Heddleston, Christopher Michael Hartshorn, Angela R Hight Walker, Jeremy N. Rich, Justin D. Lathia, Marcus T Cicerone
Abstract: We have developed a coherent Raman imaging platform using broadband coherent anti-Stokes Raman scattering (BCARS) that provides an unprecedented combination of speed, sensitivity, and spectral breadth. The system utilizes a unique configuration of la ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914850

3. Highly reproducible and reliable metal/graphene contact by UV-Ozone treatment
Published: 3/17/2014
Authors: wei li, Christina Ann Hacker, Guangjun Cheng, Angela R Hight Walker, Curt A Richter, David J Gundlach, Yiran Liang, boyuan Tian, Xuelei Liang, Lianmao Peng
Abstract: Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy (XPS) and Raman measurement ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915002

4. UV/Ozone treatment to reduce metal-graphene contact resistance
Published: 5/8/2013
Authors: wei li, Kurt Pernstich, Angela R Hight Walker, Tian T. Shen, Guangjun Cheng, Christina Ann Hacker, Curt A Richter, Qiliang Li, David J Gundlach, Xuelei Liang, Lianmao Peng, Yiran Liang
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912639

5. Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
Published: 7/11/2012
Authors: Rusen Yan, Qin Q. Zhang, Wei Li, Irene G. Calizo, Tian T. Shen, Curt A Richter, Angela R Hight Walker, Xuelei X. Liang, David J Gundlach, Nhan V Nguyen, Huili Grace Xing, Alan Seabaugh
Abstract: We determined the band alignment of a graphene-oxide-silicon structure using internal photoemission spectroscopy. From the flatband voltage and Dirac voltage we infer a 4.3  10e11 cm-2 negative extrinsic charge present on the graphene surface. Als ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911396

6. Characteristics of Graphene for Quantized Hall Effect Measurements
Published: 6/1/2012
Authors: Randolph E Elmquist, Mariano A. Real, Irene G. Calizo, Brian G Bush, Tian T. Shen, Nikolai Nikolayevich Klimov, David B Newell, Angela R Hight Walker, Randall M. Feenstra
Abstract: This paper describes concepts and measurement techniques necessary for characterization of graphene in the development of graphene-based quantized Hall effect (QHE) devices and resistance standards. We briefly contrast the properties of graphene prod ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910365

7. Relationship between Length and Surface-Enhanced Raman Spectroscopy signal Strength in Metal Nanoparticle Chains: Idea Models versus Nanofabrication
Published: 1/18/2012
Authors: Angela R Hight Walker, K. Stec, Shunpig Zhang, Hongxing Xu, Rene Lopez
Abstract: We have employed capillary force deposition on ion beam patterned substrates to fabricate chains of 60nm gold nanospheres ranging in length from 1 to 9 nanoparticles. Measurements of the surface-averaged SERS enhancement factor strength for these cha ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911269

8. Towards clean and crackless transfer of graphene
Published: 1/2/2012
Authors: Xuelei X. Liang, Brent A Sperling, Irene G. Calizo, Guangjun Cheng, Christina Ann Hacker, Qin Q. Zhang, Yaw S Obeng, Kai Yan, Hailin Peng, Qiliang Li, Xiaoxiao Zhu, Hui Yuan, Angela R Hight Walker, Zhongfan Liu, Lianmao Peng, Curt A Richter
Abstract: We present the results of a thorough study of wet chemical methods for transferring chemical vapor deposition grown graphene from the metal growth substrate to a device compatible substrate. Based on these results, we have developed a ,modified RCA c ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908399

9. A Highly Practical Route for Large-Area, Single Layer Graphene from Liquid Carbon Sources such as Benzene and Methanol
Published: 10/28/2011
Authors: Gadipelli Srinivas, Irene G. Calizo, Jamie Ford, Guangjun Cheng, Angela R Hight Walker, Taner Yildirim
Abstract: Through a detailed systematic study, we determined the parameters critical for high-quality, single-layer graphene formation and developed a straightforward synthesis that requires no explosive hydrogen or methane gas flow. The synthesis is further ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907820

10. Preferential Outward Diffusion of Cu during Unconventional Galvanic Replacement Reactions between HAuCl4 and Surface-limited Cu Nanocrystals
Published: 8/25/2011
Authors: Yonglin Liu, Angela R Hight Walker
Abstract: Using pre-synthesized Cu-Cu1.81S hetero-oligomer and Cu-Cu2S heterodimer NCs as templates and reactants, the addition of HAuCl4 leads to the preferential outward diffusion of Cu, evidenced by the formation of straight or kinked CuAu nanowires, respec ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907160



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series