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Author: David Gundlach

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1. Interface Engineering to Control Magnetic Field Effects of Organic-Based Devices by Using a Molecular Self-Assembled Monolayer
Published: 6/26/2014
Authors: Hyuk-Jae Jang, Sujitra Jeanie Pookpanratana, Alyssa N. Brigeman, Regis J Kline, James Ian Basham, David J Gundlach, Christina Ann Hacker, Oleg A Kirillov, Oana Jurchescu, Curt A Richter
Abstract: Organic semiconductors hold immense promise for the development of a wide range of innovative devices with their excellent electronic and manufacturing characteristics. Of particular interest are non-magnetic organic semiconductors that show unusual ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914774

2. Probing charge recombination dynamics in organic photovoltaic devices at open circuit conditions
Published: 6/12/2014
Authors: Lindsay Cc Elliott, James Ian Basham, Kurt Pernstich, Pragya Rasmi Shrestha, Lee J Richter, Dean M DeLongchamp, David J Gundlach
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914683

3. Morphological origin of charge transport anisotropy in aligned polythiophene thin films
Published: 6/11/2014
Authors: Brendan T. O'Connor, Obadiah G. Reid, Xinran Zhang, Regis J Kline, Lee J Richter, David J Gundlach, Dean M DeLongchamp, Michael F. Toney, Nikos Kopidakis, Garry Rumbles
Abstract: The morphological origin of anisotropic charge transport in uniaxially strain aligned poly(3-hexylthiophene) (P3HT) films is investigated. The macroscale field effect mobility anisotropy is measured in an organic thin film transistor (OTFT) configura ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914741

4. Predicting the J-V Curve in Organic Photovoltaics Using Impedance Spectroscopy
Published: 6/2/2014
Authors: James Ian Basham, Thomas N Jackson, David J Gundlach
Abstract: We employ impedance spectroscopy as a method to predict the current-voltage curve in organic photovoltaics. This technique allows the quantification of the recombination rate, series resistance, carrier density and lifetime very close to normal oper ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915218

5. Highly reproducible and reliable metal/graphene contact by UV-Ozone treatment
Published: 3/17/2014
Authors: Wei Li, Christina Ann Hacker, Guangjun Cheng, Angela R Hight Walker, Curt A Richter, David J Gundlach, Yiran Liang, boyuan Tian, Xuelei Liang, Lianmao Peng
Abstract: Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy (XPS) and Raman measurement ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915002

6. Modulated photocurrent spectroscopy of CdTe/CdS solar cells-equivalent circuit analysis
Published: 5/20/2013
Authors: Behrang H Hamadani, John F Roller, Kounavis Panagiotis, Nikolai B Zhitenev, David J Gundlach
Abstract: We have used the technique of photocurrent modulated spectroscopy to investigate the dynamic response of charge carrier transport in thin film CdTe/CdS solar cells as a function of light bias and temperature over a broad excitation frequency range. T ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912092

7. UV/Ozone treatment to reduce metal-graphene contact resistance
Published: 5/8/2013
Authors: Wei Li, Kurt Pernstich, Angela R Hight Walker, Tian T. Shen, Guangjun Cheng, Christina Ann Hacker, Curt A Richter, Qiliang Li, David J Gundlach, Xuelei Liang, Lianmao Peng, Yiran Liang
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912639

8. Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide
Published: 3/27/2013
Authors: Rusen Yan, Qin Q. Zhang, Oleg A Kirillov, Wei Li, James Ian Basham, Alexander George Boosalis, Xuelei X. Liang, Debdeep Jena, Curt A Richter, Alan C. Seabaugh, David J Gundlach, Huili G. Xing, Nhan V Nguyen
Abstract: The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912851

9. Band Offset Determination of Atomic-Layer-Deposited Al2O3 and HfO2 on InP by Internal Photoemission and Spectroscopic Ellipsometry
Published: 1/9/2013
Authors: Kun Xu, Oleg A Kirillov, David J Gundlach, Nhan V Nguyen, Pei D Ye, Min Xu, Lin Dong, Hong Sio
Abstract: Band offsets at the interfaces of n- and p-type InP ((100) and (111)A) and atomic-layer-deposited (ALD) Al2O3 were measured with internal photoemission and spectroscopic ellipsometry. Similarly, the band offsets at the interface of semi-insulatin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911342

10. Observation of spin-valve effect in Alq3 using a low work function metal
Published: 9/7/2012
Authors: Hyuk-Jae Jang, Kurt Pernstich, David J Gundlach, Oana Jurchescu, Curt A Richter
Abstract: We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to engineering of the band alignment. The devices ex ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911326



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