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You searched on: Author: robert vest

Displaying records 51 to 60 of 67 records.
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51. SURF III - A New Electron Storage Ring at NIST
Published: 10/15/1999
Authors: R A Bosch, D E Eisert, Mitchell L. Furst, R M Graves, L Greenler, A D Hamilton, L R Hughey, R P. Madden, P Robl, Ping-Shine Shaw, W S Trzeciak, Robert Edward Vest, D Wahl
Abstract: The National Institute of Standards and Technology (NIST), formerly the National Bureau of Standards (NBS), has operated the Synchrotron Ultraviolet Radiation Facility (SURF), based on an electron accelerator, continuously since the early 1960's. SU ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841427

52. The Conversion of SURF II to SURF III
Published: 4/2/1999
Authors: Mitchell L. Furst, R M Graves, A D Hamilton, L R Hughey, R P. Madden, Robert Edward Vest, W S Trzeciak, L Greenler, P Robl, D Wahl
Abstract: The Electron and Optical Physics Division of the Physics Laboratory has operated the Synchrotron Ultraviolet Radiation Facility (SURF) at the National Institute of Standards and Technology (NIST) for over 30 years. Initially operated in a parasitic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=840068

53. The Conversion of SURF II to SURF III
Published: 1/1/1999
Authors: Mitchell L. Furst, R M Graves, A D Hamilton, L R Hughey, R P. Madden, Robert Edward Vest, W S Trzeciak, R A Bosch, L Greenler, P Robl, D Wahl
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=100156

54. The Conversion of SURF II to SURF III,
Published: 1/1/1999
Authors: Mitchell L. Furst, R M Graves, A D Hamilton, L R Hughey, R P. Madden, Robert Edward Vest, W S Trzeciak, R A Bosch, L Greenler, P Robl, D Wahl
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=101818

55. Absolute Silicon Photodiodes for 160 nm to 254 nm Photons
Published: 1/1/1998
Authors: L R Canfield, Robert Edward Vest, R Korde, H Schmidtke, R Desor
Abstract: Silicon n-on-p photodiodes with 100% internal efficiency have been studied in the 160 nm to 254 nm range. Preliminary values for the quantum yield of silicon, a fundamantal property, are determined. Using these values, a trap detector for absolute ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=840044

56. Absolute Silicon Photodiodes for 160 nm to 254 nm Photons
Published: 1/1/1998
Authors: L R Canfield, Robert Edward Vest, R Korde, H Schmidtke, R Desor
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=101467

57. First Solar EUV Irradiances Obtained from SOHO by the SEM,
Published: 1/1/1998
Authors: D L Judge, D R McMullin, H S Ogawa, D Hovestadt, B Klecker, M Hilchenbach, E M{omlat}bius, L R Canfield, Robert Edward Vest, R N. Watts, Charles S Tarrio, M K{umlat}hne
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=101579

58. Near UV Electroreflectance Facility
Published: 1/1/1997
Author: Robert Edward Vest
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=100274

59. Near UV Electroreflectance Facility
Published: 1/1/1997
Author: Robert Edward Vest
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=101862

60. Photoemission from Silicon Photodiodes and Induced Changes in the Detection Efficiency in the Far Ultraviolet,
Published: 1/1/1997
Authors: Robert Edward Vest, L R Canfield
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=101788



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