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Displaying records 41 to 50 of 77 records.
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41. Interfacial Structure of Photoresist Thin Films in Developer Solutions
Published: 3/1/2005
Authors: Vivek M Prabhu, B D. Vogt, Wen-Li Wu, Jack F Douglas, Sushil K. Satija, D M Goldfarb, H Ito
Abstract: The development step is critical to the fabrication of nanostructures in chemically amplified photoresist technology. With critical dimensions (CD) shrinking to sub-100 nm and the concurrent reduction in exposure radiation wavelength, line-edge roug ...

42. Lateral Length Scales of Latent Image Roughness as Determined by Off-Specular Neutron Reflectivity
Published: 2/14/2008
Authors: Kristopher Lavery, Vivek M Prabhu, Eric K Lin, Wen-Li Wu, Sushil K. Satija, Kwang-Woo Choi, M Wormington
Abstract: A combination of specular and off-specular neutron reflectometry was used to measure the buried lateral roughness of the reaction-diffusion front in a model extreme ultraviolet lithography photoresist. Compositional heterogeneity at the latent react ...

43. Lateral Uniformity in Chemical Composition along a Buried Reaction Front in Polymers
Published: 11/15/2010
Authors: Kristopher Lavery, Vivek M Prabhu, Sushil K. Satija, Wen-Li Wu
Abstract: Off-specular neutron reflectometry was applied to characterize the form and amplitude of lateral compositional variations at a buried reaction-diffusion front. In this work, off-specular neutron measurements were first calibrated using off-specular ...

44. Manipulation of the asymmetric swelling fronts of photoresist polyelectrolyte gradient thin films
Published: 9/22/2008
Authors: Vivek M Prabhu, Ashwin Rao, Shuhui Kang, Eric K Lin, Sushil K. Satija
Abstract: The depth profile of swelling polyelectrolyte layers is characterized by a static substrate layer and an asymmetric profile with position and shape parameters that describe the near substrate and solution-side of the interfacial region. The character ...

45. Measurements of the Reaction-Diffusion Front of Model Chemically Amplified Photoresists With Varying Photoacid Size
Published: 10/26/2006
Authors: B D. Vogt, Shuhui Kang, Vivek M Prabhu, Eric K Lin, Sushil K. Satija, Karen Turnquest, Wen-Li Wu
Abstract: Neutron reflectivity and Fourier transform infrared spectroscopy measurements are used to profile the deprotection reaction-diffusion front with a nanometer resolution in a model photoresist polymer using three perfluoroalkane-based photoacid generat ...

46. Methodology for quantitative measurements of multilayer polymer thin films with IR spectroscopic ellipsometry
Published: 7/2/2009
Authors: Shuhui Kang, Vivek M Prabhu, Christopher Soles, Eric K Lin, Wen-Li Wu
Abstract: A new methodology to quantify the sensitivity and resolution of infrared variable angle spectroscopic ellipsometry (IRSE) measurements was developed for probing the depth profile of composition in thin polymer films. A multilayer system comprised of ...

47. Nanoelectronics Lithography
Published: 3/1/2011
Authors: Stephen Knight, Vivek M Prabhu, John H Burnett, James Alexander Liddle, Christopher Soles, Alain C. Diebold
Abstract: This is a compiled chapter that will be included into the Handbook of Nanophysics.

48. Nanoparticle assembly, DNA provides control
Published: 5/1/2009
Authors: Vivek M Prabhu, Steven D Hudson
Abstract: No abstract this is a Nature Materials News and Views (less than 800 word) article.

49. Near-Edge X-Ray Absorption Fine Structure Measurements of Surface Segregation in 157 nm Photoresist Blends
Published: 12/1/2003
Authors: E Jablonski, Vivek M Prabhu, S Sambasivan, Eric K Lin, Daniel A Fischer, D L Goldfarb, M Angelopoulos, H Ito
Abstract: The surface and bulk chemistry of photoresist blends for use at the 157 nm node were analyzed using near edge x-ray absorption fine structure (NEXAFS) spectroscopy to quantify component segregation and identify surface phenomena that may impact patte ...

50. Neutron reflectivity characterization of the photoacid reaction-diffusion latent and developed images of molecular resists for extreme-ultraviolet lithography
Published: 5/11/2012
Authors: Vivek M Prabhu, Shuhui Kang, Wen-Li Wu, Sushil K. Satija, Christopher K. Ober, Jing Sha, Peter V. Bonnesen
Abstract: Lithographic feature size requirements have approached a few radius of gyration of chemically-amplified photoresist polymers used in thin film patterning. Further, the feature dimensions are commensurate with the photoacid diffusion length that defin ...

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