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Displaying records 91 to 100 of 111 records.
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91. The AC Stark Shifts of High-Lying Rydberg Levels in Intense Electromagnetic Fields,
Published: 1/1/1992
Authors: J B Kim, G Lan, Q Li, Thomas B Lucatorto, T J McIlrath, Thomas R. O'Brian

92. The Identification of the Ca 3d4f Autoionizing Levels by the Application of Multiphoton Polarization Selection Rules,
Published: 1/1/1994
Authors: J B Kim, X Xiong, N M Laham, Thomas B Lucatorto, T J McIlrath

93. The NIST EUV facility for advanced photoresist qualification using the witness-sample test
Published: 8/29/2011
Authors: Steven E Grantham, Charles S Tarrio, Shannon Bradley Hill, Lee J Richter, Thomas B Lucatorto, J. van Dijk, C. Kaya, N. Harned, R. Hoefnagels, M. Silova, J. Steinhoff
Abstract: Before being used in an extreme-ultraviolet (EUV) scanner, photoresists must first be qualified to ensure that they will not excessively contaminate the scanner optics or other parts of the vacuum environment of the scanner. At the National Institute ...

94. The New NIST/DARPA National Soft X-Ray Reflectometry Facility,
Published: 1/1/1994
Authors: Charles S Tarrio, R N. Watts, Thomas B Lucatorto, M Haass, T A Callcott, J J Jia

95. The New UV Radiometry Facility at SURF
Published: 3/1/2002
Authors: Ping-Shine Shaw, Keith R Lykke, R Gupta, Uwe Arp, Thomas B Lucatorto, Albert C Parr
Abstract: The Synchrotron Ultraviolet Radiation Facility (SURF III) at the National Institute of Standards and Technology (NIST) provides a unique opportunity for high-accuracy VUV to visible radiometry with the completion of a recent upgrade to improve the un ...

96. Tomography of Integrated Circuit Interconnect With an Electromigration Void
Published: 5/1/2000
Authors: Zachary H Levine, A R Kalukin, M Kuhn, S P Frigo, I McNulty, C C Retsch, Y Wang, Uwe Arp, Thomas B Lucatorto, Bruce D Ravel, Charles S Tarrio
Abstract: An integrated circuit interconnect was subject to accelerated-life conditions to induce an electromigration void. The silicon substrate was removed, leaving only the interconnect encased test structure encased in silica. We imaged the sample wit ...

97. Tomography of Integrated Circuit Interconnects
Published: 10/1/2001
Authors: Zachary H Levine, A R Kalukin, M Kuhn, S P Frigo, I McNulty, C C Retsch, Y Wang, Uwe Arp, Thomas B Lucatorto, Bruce D Ravel, Charles S Tarrio
Abstract: 00 Word summary based on the paper:Z. H. Levine, A. R. Kalukin, M. Kuhn, S. P. Frigo, I. McNulty,>C. C. Retsch, Y. Wang, U. Arp, T. B. Lucatorto, B. D. Ravel, and C. Tarrio,>``Microtomography of Integrated Circuit Interconnect with an> Electromigra ...

98. Towards High Accuracy Reflectometry for Extreme-Ultraviolet Lithography
Series: Journal of Research (NIST JRES)
Published: 7/1/2003
Authors: Charles S Tarrio, S Grantham, M B Squires, Robert Edward Vest, Thomas B Lucatorto
Abstract: Currently the most demanding application of extreme ultraviolet optics is connected with the development of extreme ultraviolet lithography. Not only does each of the Mo/Si multilayer EUV stepper mirrors require the highest attainable reflectivity a ...

99. Towards high accuracy reflectometry for extreme-ultraviolet lithography,
Published: 1/1/2003
Authors: Charles S Tarrio, Steven E Grantham, M B Squires, Robert Edward Vest, Thomas B Lucatorto

100. Tracking down sources of carbon contamination in EUVL exposure tools
Published: 8/3/2009
Authors: Charles S Tarrio, Robert Edward Vest, Thomas B Lucatorto, R. Caudillo
Abstract: Optics in EUVL exposure tools are known to suffer reflectivity degradation, mostly from the buildup of carbon. The sources of this carbon have been difficult to identify. Vacuum cleanliness is normally monitored with a residual gas analyzer, but th ...

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