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Author: joseph kopanski
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Displaying records 71 to 80 of 107 records.
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71. Practical Metrology Aspects of Scanning Capacitance Microscopy for Silicon 2-D Dopant Profiling, Condensed version
Published: 12/31/1997
Authors: Joseph J Kopanski, Jay F. Marchiando, R. Alvis
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8962

72. Precise Alignment of single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures
Published: 3/1/2007
Authors: Qiliang Li, Sang-Mo Koo, Curt A Richter, Monica D Edelstein, John E Bonevich, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: The integration of nanowires and nanotubes into electrical test structures to investigate their nanoelectronic transport properties is a significant challenge. Here we present a single nanowire manipulating system to precisely manipulate and align in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32351

73. Precise Manipulation and Alighment of Single Nanowires for Device Fabrication
Published: 8/1/2006
Authors: Qiliang Li, Sang-Mo Koo, Curt A Richter, Monica D Edelstein, Joseph J Kopanski, John S Suehle, Eric M. Vogel
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32432

74. Precise Manipulation and Alignment of Single Nanowire
Published: 3/2/2007
Authors: Qiliang Li, Sang-Mo Koo, Curt A Richter, Monica D Edelstein, John E Bonevich, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Nanowires and nanotubes are being intensively investigated for nanoelectronic transport applications. The integration of such nanostructures into circuitry requires a simple, high-efficiency and low-cost strategy. Here we develop a single nanowire ma ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32233

75. Quantitative Interpretation of Scanning Capcitance Microscope Images as Two-Dimensional Dopant Profiles
Published: 3/10/2004
Authors: Joseph J Kopanski, Jay F. Marchiando
Abstract: Scanning capacitance microscopy (SCM) is used as a qualitative analysis tool with multiple applications for failure analysis. SCM can measure the shape of dopant profiles, can ascertain if certain implants have been completed, can verify the conducti ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31471

76. Regression Procedure for Determining the Dopant Profile in Semiconductors from Scanning Capacitance Microscopy Data
Published: 11/15/2002
Authors: Jay F. Marchiando, Joseph J Kopanski
Abstract: To develop a regression procedure to correlate scanning capacitance microscope data with dopant concentration in three dimensions, the inverse problem is treated in two dimensions as an optimization problem that is formulated as a regularized nonline ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=16365

77. Review of Semiconductor Microelectronic Test Structures with Applications to Infrared Detector Materials and Processes
Published: 7/1/1993
Authors: Joseph J Kopanski, C. E. Schuster
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=11257

78. Scanned Probe Techniques for the Electrical Characterization of Semiconductor Devices
Published: 7/1/1995
Authors: John A. Dagata, Joseph J Kopanski
Abstract: The spatial resolution, sensitivity, and accuracy required for electrical characterization of device structures in the semiconductor industry suggest that scanned probe microscopy (SPM) tools may offer an alternative to existing measurement technique ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820733

79. Scanning Capacitance Microscopy Applied to 2D Dopant Profiling of Semiconductors
Published: 12/31/1997
Authors: Joseph J Kopanski, Jay F. Marchiando, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8618

80. Scanning Capacitance Microscopy Measurement of 2-D Dopant Profiles Across Junctions
Published: 1/1/1998
Authors: Joseph J Kopanski, Jay F. Marchiando, David W. Berning, R. Alvis, H. E. Smith
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=26626



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