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Author: joseph kopanski
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Displaying records 71 to 80 of 109 records.
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71. PSPICE Analysis of the Scanning Capacitance Microscope Sensor
Published: 4/27/2003
Authors: Gyoung Ho Buh, Chi Tran, Joseph J Kopanski
Abstract: A detailed analysis of the capacitance sensor from a scanning capacitance microscope (SCM) is presented. PSPICE circuit simulations are compared with experimental results. The general behavior of the SCM sensor and practical aspects of the sensor-tun ...

72. Permittivity Measurements on Molecular-Sized Samples, Extended Abstract
Published: 12/1/1990
Authors: A. van Roggen, L. Yuwono, Hui H. Zhou, Paul H Meijer, Joseph J Kopanski

73. Practical Metrology Aspects of Scanning Capacitance Microscopy for Silicon 2-D Dopant Profiling, Condensed version
Published: 12/31/1997
Authors: Joseph J Kopanski, Jay F. Marchiando, R. Alvis

74. Precise Alignment of single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures
Published: 3/1/2007
Authors: Qiliang Li, Sang-Mo Koo, Curt A Richter, Monica D Edelstein, John E Bonevich, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: The integration of nanowires and nanotubes into electrical test structures to investigate their nanoelectronic transport properties is a significant challenge. Here we present a single nanowire manipulating system to precisely manipulate and align in ...

75. Precise Manipulation and Alighment of Single Nanowires for Device Fabrication
Published: 8/1/2006
Authors: Qiliang Li, Sang-Mo Koo, Curt A Richter, Monica D Edelstein, Joseph J Kopanski, John S Suehle, Eric M. Vogel

76. Precise Manipulation and Alignment of Single Nanowire
Published: 3/2/2007
Authors: Qiliang Li, Sang-Mo Koo, Curt A Richter, Monica D Edelstein, John E Bonevich, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Nanowires and nanotubes are being intensively investigated for nanoelectronic transport applications. The integration of such nanostructures into circuitry requires a simple, high-efficiency and low-cost strategy. Here we develop a single nanowire ma ...

77. Quantitative Interpretation of Scanning Capcitance Microscope Images as Two-Dimensional Dopant Profiles
Published: 3/10/2004
Authors: Joseph J Kopanski, Jay F. Marchiando
Abstract: Scanning capacitance microscopy (SCM) is used as a qualitative analysis tool with multiple applications for failure analysis. SCM can measure the shape of dopant profiles, can ascertain if certain implants have been completed, can verify the conducti ...

78. Regression Procedure for Determining the Dopant Profile in Semiconductors from Scanning Capacitance Microscopy Data
Published: 11/15/2002
Authors: Jay F. Marchiando, Joseph J Kopanski
Abstract: To develop a regression procedure to correlate scanning capacitance microscope data with dopant concentration in three dimensions, the inverse problem is treated in two dimensions as an optimization problem that is formulated as a regularized nonline ...

79. Review of Semiconductor Microelectronic Test Structures with Applications to Infrared Detector Materials and Processes
Published: 7/1/1993
Authors: Joseph J Kopanski, C. E. Schuster

80. Scanned Probe Techniques for the Electrical Characterization of Semiconductor Devices
Published: 7/1/1995
Authors: John A. Dagata, Joseph J Kopanski
Abstract: The spatial resolution, sensitivity, and accuracy required for electrical characterization of device structures in the semiconductor industry suggest that scanned probe microscopy (SPM) tools may offer an alternative to existing measurement technique ...

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