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21. Characterization of Two-Dimensional Dopant Profiles: Status and Review
Published: 2/1/1996
Authors: Alain C. Diebold, M. Kump, Joseph J Kopanski, David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28378

22. Characterization of Two-Dimensional Dopant Profiles: Status and Review, Extended Abstracts
Published: 12/31/1994
Authors: Alain C. Diebold, M. Kump, Joseph J Kopanski, David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=1068

23. Characterization of the silicon dioxide-silicon interface with the scanning capacitance microscope
Published: 7/1/2006
Authors: Joseph J Kopanski, W. Robert Thurber, Melissa Chun
Abstract: The scanning capacitance microscope (SCM) was used to characterize the capacitance-voltage (C-V) properties of silicon dioxide (SiO2) on silicon (Si). The operational mechanism of the SCM and its potential for non-destructive, contactless characteriz ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31516

24. Charge Trapping in Cubic Silicon Carbide MIS Capacitors
Published: 12/31/1992
Author: Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=6576

25. Comparison of Experimental and Theoretical Scanning Capacitance Microscope Signals and Their Impact on the Accuracy of Determined Two-Dimensional Carrier Profiles
Published: 10/30/2002
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30878

26. Comparison of Measured and Modeled Scanning Capacitance Microscopy Images Across P-N Junctions
Published: 7/1/1998
Authors: Joseph J Kopanski, Jay F. Marchiando, John Albers, Brian G. Rennex
Abstract: Scanning capacitance microscope (SCM) image contrast measured on ion implanted P^u+^/P and P^u+^/N junction structures with identical dopant profiles, as a function of SCM operating conditions, is compared to a theoretical model of the SCM based on a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=11094

27. Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
Published: 2/1/2006
Authors: Seong-Eun Park, Nhan V Nguyen, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Two-dimensional (2-D) doping profiles of differently doped Si homostructures were investigated by scanning capacitance microscopy (SCM) and scanning Kelvin probe microscopy (SKPM). The calibrated doping concentration of the n-step Si layers was in th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31963

28. Conductive Carbon Nanotubes for Semiconductor Metrology
Published: 8/10/2010
Authors: Joseph J Kopanski, Victor H. Vartanian, Vladimir Mancevski, Phillip D. Rack, Ilona Sitnitsky, Matthew D. Bresin
Abstract: This paper presents an evaluation of e-beam assisted deposition and welding of conductive carbon nanotube (c-CNT) tips for electrical scanning probe microscope measurements. Variations in CNT tip conductivity and contact resistance during fabrication ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906923

29. Conductive Nanotube-based Scanning Probe Microscopy Applications
Published: 6/30/2010
Authors: Paul McClure, Vladimir Mancevski, Joseph J Kopanski, Ilona Sitnitsky, Vincent LaBella, Kathleen Dunn, Matthew D. Bresin, Phillip D. Rack, Victor H. Vartanian
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907145

30. Determination of surface barrier height and surface state density in GaN films grown on sapphire substrates
Published: 3/24/2005
Authors: Seong-Eun Park, Joseph J Kopanski, Youn-Seon Kang, Lawrence H Robins, Hyun-Keel Shin
Abstract: Photoreflectance (PR) modulation spectroscopy was performed to investigate surface properties of GaN films grown on sapphire substrates. From the period of the Franz-Keldysh oscillations, the surface electric field across the GaN space charge region ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31874