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Author: joseph kopanski
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Displaying records 21 to 30 of 110 records.
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21. Carrier Concentration Dependence of Scanning Capacitance Microscopy Signal in the Vicinity of P-N Junctions
Published: 6/1/1999
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
Abstract: Scanning capacitance microscopy was used to image 1) boron dopant gradients in p-type silicon, and 2) identical boron dopant gradients in n-type silicon. The bias voltage dependence of the apparent p-n junction location in the SCM images was measure ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=25560

22. Characterization of Two-Dimensional Dopant Profiles: Status and Review
Published: 12/31/1995
Authors: Alain C. Diebold, M. Kump, Joseph J Kopanski, David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=24280

23. Characterization of Two-Dimensional Dopant Profiles: Status and Review
Published: 2/1/1996
Authors: Alain C. Diebold, M. Kump, Joseph J Kopanski, David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28378

24. Characterization of Two-Dimensional Dopant Profiles: Status and Review, Extended Abstracts
Published: 12/31/1994
Authors: Alain C. Diebold, M. Kump, Joseph J Kopanski, David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=1068

25. Characterization of the silicon dioxide-silicon interface with the scanning capacitance microscope
Published: 7/1/2006
Authors: Joseph J Kopanski, W. Robert Thurber, Melissa Chun
Abstract: The scanning capacitance microscope (SCM) was used to characterize the capacitance-voltage (C-V) properties of silicon dioxide (SiO2) on silicon (Si). The operational mechanism of the SCM and its potential for non-destructive, contactless characteriz ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31516

26. Charge Trapping in Cubic Silicon Carbide MIS Capacitors
Published: 12/31/1992
Author: Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=6576

27. Charge-Based Capacitance Measurements Circuits for Interface With Atomic Force Microscope Probes
Published: 3/25/2013
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Chong Jiang, Michael Lorek, Timothy Kohler, Curt A Richter
Abstract: The charge based capacitance measurement (CBCM) technique is highly sensitive to small capacitances and capable integration of onto an AFM tip, thereby reducing stray and wire capacitance to the bare minimum. The CBCM technique has previous been appl ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913172

28. Comparison of Experimental and Theoretical Scanning Capacitance Microscope Signals and Their Impact on the Accuracy of Determined Two-Dimensional Carrier Profiles
Published: 10/30/2002
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30878

29. Comparison of Measured and Modeled Scanning Capacitance Microscopy Images Across P-N Junctions
Published: 7/1/1998
Authors: Joseph J Kopanski, Jay F. Marchiando, John Albers, Brian G. Rennex
Abstract: Scanning capacitance microscope (SCM) image contrast measured on ion implanted P^u+^/P and P^u+^/N junction structures with identical dopant profiles, as a function of SCM operating conditions, is compared to a theoretical model of the SCM based on a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=11094

30. Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
Published: 2/1/2006
Authors: Seong-Eun Park, Nhan V Nguyen, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Two-dimensional (2-D) doping profiles of differently doped Si homostructures were investigated by scanning capacitance microscopy (SCM) and scanning Kelvin probe microscopy (SKPM). The calibrated doping concentration of the n-step Si layers was in th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31963



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