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Author: joseph kopanski
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Displaying records 81 to 90 of 107 records.
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81. Scanning Capacitance Microscopy Measurements and Modeling: Progress Towards Dopant Profiling of Silicon
Published: 2/1/1996
Authors: Joseph J Kopanski, Jay F. Marchiando, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28806

82. Two-Dimensional Scanning Capacitance Microscopy Measurements of Cross-Sectioned Very Large Scale Integration Test Structures
Published: 2/1/1996
Authors: G. Neubauer, A. Erickson, C. C. Williams, Joseph J Kopanski, M. Rodgers, D. Adderton
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=23278

83. Assessment of Reliability Concerns for Wide-Temperature Operation of Semiconductor Devices and Circuits
Published: 1/20/1996
Authors: Joseph J Kopanski, David L. Blackburn, George Gibson Harman, David W. Berning
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=5016

84. 2D-Scanning Capacitance Microscopy Measurement of Cross-Sectional VLSI Test Structures
Published: 12/31/1995
Authors: G. Neubauer, A. Erickson, C. C. Williams, Joseph J Kopanski, M. Rodgers, D. Adderton
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=18647

85. Characterization of Two-Dimensional Dopant Profiles: Status and Review
Published: 12/31/1995
Authors: Alain C. Diebold, M. Kump, Joseph J Kopanski, David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=24280

86. Oxidation of SiC, in Properties of Silicon Carbide
Published: 12/31/1995
Author: Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=9046

87. Scanning Capacitance Microscopy Measurements and Modeling: Progress Towards Dopant Profiling of Silicon
Published: 12/31/1995
Authors: Joseph J Kopanski, Jay F. Marchiando, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=9950

88. Scanned Probe Techniques for the Electrical Characterization of Semiconductor Devices
Published: 7/1/1995
Authors: John A. Dagata, Joseph J Kopanski
Abstract: The spatial resolution, sensitivity, and accuracy required for electrical characterization of device structures in the semiconductor industry suggest that scanned probe microscopy (SPM) tools may offer an alternative to existing measurement technique ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820733

89. Scanning Probe Techniques for the Electrical Characterization of Semiconductor Devices
Published: 7/1/1995
Authors: John A. Dagata, Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=16678

90. Characterization of Two-Dimensional Dopant Profiles: Status and Review, Extended Abstracts
Published: 12/31/1994
Authors: Alain C. Diebold, M. Kump, Joseph J Kopanski, David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=1068



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