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Author: joseph kopanski
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Displaying records 71 to 80 of 110 records.
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71. Dopant Characterization Round-Robin Study Performed on Two-Dimensional Test Structures Fabricated at Texas Instruments
Published: 12/31/1998
Authors: J. Vahakangas, Markku Lahti, M C Chang, H Edward, C F Machala, R S Martin, V Zavyalov, J S McMurray, C. C. Williams, P DeWolf, Vandevorst, D. Venables, S S Neogi, D L Ottaviani, Joseph J Kopanski, J F Machiando, Brian G. Rennex, J N Nxulamo, Y Li, D J Thomson
Abstract: The lack of a two-dimensional (2D) dopant standard, and hence, a priori knowledge of dopant distribution makes it impossible to unambiguously judge accuracy of any experimental or theoretical effort to characterize silicon doping in two dimensions. R ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28568

72. Intermittent-Contact Scanning Capacitance Microscopy Imaging and Modeling for Overlay Metrology
Published: 12/31/1998
Authors: Santos D Mayo, Joseph J Kopanski, William F Guthrie
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=27867

73. Comparison of Measured and Modeled Scanning Capacitance Microscopy Images Across P-N Junctions
Published: 7/1/1998
Authors: Joseph J Kopanski, Jay F. Marchiando, John Albers, Brian G. Rennex
Abstract: Scanning capacitance microscope (SCM) image contrast measured on ion implanted P^u+^/P and P^u+^/N junction structures with identical dopant profiles, as a function of SCM operating conditions, is compared to a theoretical model of the SCM based on a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=11094

74. Intermittent-Contact Scanning Capacitance Microscope for Lithographic Overlay Measurement
Published: 5/11/1998
Authors: Joseph J Kopanski, Santos D Mayo
Abstract: A new scanning capacitance microscope (SCM) mode was implemented by using an atomic force microscope (AFM) operated in intermittent contact and by measuring the tip-to-sample capacitance change at the tip vibration frequency. The intermittent-contac ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=11031

75. A Model Database for Determining Dopant Profiles from Scanning Capacitance Microscope Measurements
Published: 2/1/1998
Authors: Jay F. Marchiando, Joseph J Kopanski, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=26143

76. Scanning Capacitance Microscopy Measurement of 2-D Dopant Profiles Across Junctions
Published: 1/1/1998
Authors: Joseph J Kopanski, Jay F. Marchiando, David W. Berning, R. Alvis, H. E. Smith
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=26626

77. A Model Database for Determining Dopant Profiles from Scanning Capacitance Microscope Measurements
Published: 12/31/1997
Authors: Jay F. Marchiando, Joseph J Kopanski, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8738

78. Models for Interpreting Measurements Scanning Capacitance Microscope Measurements
Published: 12/31/1997
Authors: Jay F. Marchiando, J R. Lowney, Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28178

79. Practical Metrology Aspects of Scanning Capacitance Microscopy for Silicon 2-D Dopant Profiling, Condensed version
Published: 12/31/1997
Authors: Joseph J Kopanski, Jay F. Marchiando, R. Alvis
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8962

80. Scanning Capacitance Microscopy Applied to 2D Dopant Profiling of Semiconductors
Published: 12/31/1997
Authors: Joseph J Kopanski, Jay F. Marchiando, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8618



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