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Displaying records 61 to 70 of 114 records.
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61. PSPICE Analysis of the Scanning Capacitance Microscope Sensor
Published: 4/27/2003
Authors: Gyoung Ho Buh, Chi Tran, Joseph J Kopanski
Abstract: A detailed analysis of the capacitance sensor from a scanning capacitance microscope (SCM) is presented. PSPICE circuit simulations are compared with experimental results. The general behavior of the SCM sensor and practical aspects of the sensor-tun ...

62. High Spatial Resolution Automatic Resistivity Mapping of Semiconductors
Published: 3/4/2003
Authors: M W. Matarazzo, Joseph J Kopanski

63. Scanning Probe Microscopes for the Electrical Characterization of Semiconductors
Published: 3/4/2003
Author: Joseph J Kopanski

64. Regression Procedure for Determining the Dopant Profile in Semiconductors from Scanning Capacitance Microscopy Data
Published: 11/15/2002
Authors: Jay F. Marchiando, Joseph J Kopanski
Abstract: To develop a regression procedure to correlate scanning capacitance microscope data with dopant concentration in three dimensions, the inverse problem is treated in two dimensions as an optimization problem that is formulated as a regularized nonline ...

65. Comparison of Experimental and Theoretical Scanning Capacitance Microscope Signals and Their Impact on the Accuracy of Determined Two-Dimensional Carrier Profiles
Published: 10/30/2002
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex

66. Capacitive Probe Microscopy
Published: 1/15/2002
Author: Joseph J Kopanski
Abstract: A scanning capacitance microscope (SCM) combines a differential capacitance measurement with an atomic force microscope (AFM). The AFM controls the position and contact force of a scanning probe tip, and a sensor simultaneously measures the capacitan ...

67. Fast C2D: Software for Extracting 2D Carrier Profiles from Scanning Capacitance Microscopy Images
Published: 2/1/2001
Authors: Brian G. Rennex, Joseph J Kopanski, Jay F. Marchiando

68. Gate Oxide Formation under Mild Conditions for Scanning Capacitance Microscopy
Published: 2/1/2001
Authors: Duncan McBride, Joseph J Kopanski
Abstract: Scanning Capacitance Microscopy (SCM) can be used to measure doping density in silicon with a spatial resolution of about 10 nm. In order to make such measurements on fabricated devices, the device must be cross-sectioned, and an oxide sufficient to ...

69. Scanning Capacitance Microscopy for Measuring Device Carrier Profiles beyond the 100 nm Generation
Published: 12/31/2000
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
Abstract: The Scanning Capacitance Microscope (SCM) is a leading candidate for a metrology capable of measuring the two-dimensional (2-D) carrier profiles of cross-section silicon transistors. The International Technology Roadmap for Semiconductors (ITRS) ide ...

70. In Situ and Ex Situ Spectroscopic Ellipsometry of Low-Temperature-Grown GaAs
Published: 7/30/2000
Authors: Donald A. Gajewski, Nhan V Nguyen, Jonathan E Guyer, Joseph J Kopanski, Curt A Richter, Joseph G. Pellegrino

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