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Author: joseph kopanski
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Displaying records 61 to 70 of 110 records.
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61. Comparison of Experimental and Theoretical Scanning Capacitance Microscope Signals and Their Impact on the Accuracy of Determined Two-Dimensional Carrier Profiles
Published: 10/30/2002
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30878

62. Capacitive Probe Microscopy
Published: 1/15/2002
Author: Joseph J Kopanski
Abstract: A scanning capacitance microscope (SCM) combines a differential capacitance measurement with an atomic force microscope (AFM). The AFM controls the position and contact force of a scanning probe tip, and a sensor simultaneously measures the capacitan ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30079

63. Fast C2D: Software for Extracting 2D Carrier Profiles from Scanning Capacitance Microscopy Images
Published: 2/1/2001
Authors: Brian G. Rennex, Joseph J Kopanski, Jay F. Marchiando
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=24183

64. Gate Oxide Formation under Mild Conditions for Scanning Capacitance Microscopy
Published: 2/1/2001
Authors: Duncan McBride, Joseph J Kopanski
Abstract: Scanning Capacitance Microscopy (SCM) can be used to measure doping density in silicon with a spatial resolution of about 10 nm. In order to make such measurements on fabricated devices, the device must be cross-sectioned, and an oxide sufficient to ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=15651

65. Scanning Capacitance Microscopy for Measuring Device Carrier Profiles beyond the 100 nm Generation
Published: 12/31/2000
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
Abstract: The Scanning Capacitance Microscope (SCM) is a leading candidate for a metrology capable of measuring the two-dimensional (2-D) carrier profiles of cross-section silicon transistors. The International Technology Roadmap for Semiconductors (ITRS) ide ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=5920

66. In Situ and Ex Situ Spectroscopic Ellipsometry of Low-Temperature-Grown GaAs
Published: 7/30/2000
Authors: Donald A. Gajewski, Nhan V Nguyen, Jonathan E Guyer, Joseph J Kopanski, Curt A Richter, Joseph G. Pellegrino
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30331

67. Limitations of the Calibration Curve Method for Determining Dopant Profiles from Scanning Capacitance Microscope Measurements
Published: 3/1/2000
Authors: Jay F. Marchiando, Joseph J Kopanski, John Albers
Abstract: The calibration or conversion curve method (CCM) refers here to using a database of calculations of the capacitance done for a matrix set of model parameters, such as oxide thickness, uniform dopant density, etc., as one method for interpreting scann ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8592

68. Carrier Concentration Dependence of Scanning Capacitance Microscopy Signal in the Vicinity of P-N Junctions
Published: 1/1/2000
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
Abstract: Scanning capacitance microscopy was used to image 1) boron dopant gradients in p-type silicon, and 2) identical boron dopant gradients in n-type silicon. The bias voltage dependence of the apparent p-n junction location in the SCM images was measure ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=18890

69. Carrier Concentration Dependence of Scanning Capacitance Microscopy Signal in the Vicinity of P-N Junctions
Published: 6/1/1999
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
Abstract: Scanning capacitance microscopy was used to image 1) boron dopant gradients in p-type silicon, and 2) identical boron dopant gradients in n-type silicon. The bias voltage dependence of the apparent p-n junction location in the SCM images was measure ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=25560

70. Limitations of the Calibration Curve Method for Determining Dopant Profiles from Scanning Capacitance Microscope Measurements
Published: 6/1/1999
Authors: Jay F. Marchiando, Joseph J Kopanski, John Albers
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=25730



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