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Displaying records 31 to 40 of 112 records.
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31. Enhanced Spatial Resolution Scanning Kelvin Force Microscopy Using Conductive Carbon Nanotube Tips
Published: 10/5/2009
Authors: Joseph J Kopanski, Paul McClure, Vladimir Mancevski
Abstract: The response of a scanning Kelvin force microscope (SKFM) was measured with conventional micromachined silicon tips coated with Au and with advanced tips terminated with a carbon nanotube (CNT). A simple model of the SKFM predicts enhanced spatial re ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903125

32. Test Chip to Evaluate Measurement Methods for Small Capacitances
Published: 3/30/2009
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Chong Jiang, Curt A Richter
Abstract: We designed and fabricated a test chip to help us evaluate the performance of new approaches to measurement of small capacitances (femto-Farads to atto-Farads range). The test chip consists of an array of metal-oxide-semiconductor capacitors, metal-i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901503

33. Scanning Probe Microscopy for Dielectric and Metal Characterization
Published: 6/10/2008
Authors: Joseph J Kopanski, Thomas R Walker
Abstract: The properties of both insulators and metals can be characterized capacitively with scanning probe microscopy, though the techniques employed are different. Intermittent contact scanning capacitance microscopy (IC-SCM) is a useful technique for chara ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32949

34. Scanning Kelvin Force Microscopy For Characterizing Nanostructures in Atmosphere
Published: 9/30/2007
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Stoyan Jeliazkov, Weirong Jiang, Thomas R Walker
Abstract: The Electrostatic Force Microscope (EFM) and its variants are of interest for the measurement of potential distributions within nanostructures, and for work function measurements of gate metals for next generation CMOS. In phase mode, the EFM measure ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32648

35. Surface Grafting of Polypyrrole onto Silicon Wafers
Published: 8/1/2007
Authors: Daeson Sohn, Hyoseung Moon, Michael J Fasolka, Naomi Eidelman, Sang-Mo Koo, Curt A Richter, Eun S. Park, Joseph J Kopanski, Eric J. Amis
Abstract: A micromolding technique in capillaries was adapted to make uniform patterns of polypyrrole (Ppy), and the conductivities of the patterns were measured by direct contact IV curves and conductance AFM methods. Noncovalently bound Ppy patterns have hig ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854462

36. Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application
Published: 5/16/2007
Authors: Qiliang Li, Xiaoxiao Zhu, Hao Xiong, Sang-Mo Koo, D. E Ioannou, Joseph J Kopanski, John S Suehle, Curt A Richter
Abstract: We report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32610

37. Precise Manipulation and Alignment of Single Nanowire
Published: 3/2/2007
Authors: Qiliang Li, Sang-Mo Koo, Curt A Richter, Monica D Edelstein, John E Bonevich, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Nanowires and nanotubes are being intensively investigated for nanoelectronic transport applications. The integration of such nanostructures into circuitry requires a simple, high-efficiency and low-cost strategy. Here we develop a single nanowire ma ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32233

38. Precise Alignment of single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures
Published: 3/1/2007
Authors: Qiliang Li, Sang-Mo Koo, Curt A Richter, Monica D Edelstein, John E Bonevich, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: The integration of nanowires and nanotubes into electrical test structures to investigate their nanoelectronic transport properties is a significant challenge. Here we present a single nanowire manipulating system to precisely manipulate and align in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32351

39. Scanning Capacitance Microscopy for Electrical Characterization of Semiconductors and Dielectrics
Published: 2/1/2007
Author: Joseph J Kopanski
Abstract: A Scanning Capacitance Microscope (SCM) combines an Atomic Force Microscope (AFM) with a 1-GHz tuned-LCR circuit to measure the capacitance between a conducting tip and sample. When applied to a semiconductor sample, an ac voltage at around 10 kHz is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31968

40. Work Function Characterization of TaSiN and TaCN Electrodes Using CV, IV, IPE and SKPM
Published: 11/1/2006
Authors: Hao Xiong, Nhan V Nguyen, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Work function of TaSiN (TaCN) films on HfO2 or SiO2 gate dielectrics is investigated for the first time using a combination of Capacitance?Voltage, Fowler?Nordheim tunneling, internal Photoemission, and scanning Kelevin probe microscopy methods, whic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32431



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