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Author: joseph kopanski
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Displaying records 31 to 40 of 107 records.
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31. Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application
Published: 5/16/2007
Authors: Qiliang Li, Xiaoxiao Zhu, Hao Xiong, Sang-Mo Koo, D. E Ioannou, Joseph J Kopanski, John S Suehle, Curt A Richter
Abstract: We report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32610

32. Precise Manipulation and Alignment of Single Nanowire
Published: 3/2/2007
Authors: Qiliang Li, Sang-Mo Koo, Curt A Richter, Monica D Edelstein, John E Bonevich, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Nanowires and nanotubes are being intensively investigated for nanoelectronic transport applications. The integration of such nanostructures into circuitry requires a simple, high-efficiency and low-cost strategy. Here we develop a single nanowire ma ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32233

33. Precise Alignment of single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures
Published: 3/1/2007
Authors: Qiliang Li, Sang-Mo Koo, Curt A Richter, Monica D Edelstein, John E Bonevich, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: The integration of nanowires and nanotubes into electrical test structures to investigate their nanoelectronic transport properties is a significant challenge. Here we present a single nanowire manipulating system to precisely manipulate and align in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32351

34. Scanning Capacitance Microscopy for Electrical Characterization of Semiconductors and Dielectrics
Published: 2/1/2007
Author: Joseph J Kopanski
Abstract: A Scanning Capacitance Microscope (SCM) combines an Atomic Force Microscope (AFM) with a 1-GHz tuned-LCR circuit to measure the capacitance between a conducting tip and sample. When applied to a semiconductor sample, an ac voltage at around 10 kHz is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31968

35. Work Function Characterization of TaSiN and TaCN Electrodes Using CV, IV, IPE and SKPM
Published: 11/1/2006
Authors: Hao Xiong, Nhan V Nguyen, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Work function of TaSiN (TaCN) films on HfO2 or SiO2 gate dielectrics is investigated for the first time using a combination of Capacitance?Voltage, Fowler?Nordheim tunneling, internal Photoemission, and scanning Kelevin probe microscopy methods, whic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32431

36. Accomplishments in Nanotechnology
Series: Special Publication (NIST SP)
Report Number: 1052
Published: 8/1/2006
Authors: Michael T Postek, Joseph J Kopanski, David A Wollman
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32512

37. Precise Manipulation and Alighment of Single Nanowires for Device Fabrication
Published: 8/1/2006
Authors: Qiliang Li, Sang-Mo Koo, Curt A Richter, Monica D Edelstein, Joseph J Kopanski, John S Suehle, Eric M. Vogel
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32432

38. Characterization of the silicon dioxide-silicon interface with the scanning capacitance microscope
Published: 7/1/2006
Authors: Joseph J Kopanski, W. Robert Thurber, Melissa Chun
Abstract: The scanning capacitance microscope (SCM) was used to characterize the capacitance-voltage (C-V) properties of silicon dioxide (SiO2) on silicon (Si). The operational mechanism of the SCM and its potential for non-destructive, contactless characteriz ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31516

39. Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
Published: 2/1/2006
Authors: Seong-Eun Park, Nhan V Nguyen, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Two-dimensional (2-D) doping profiles of differently doped Si homostructures were investigated by scanning capacitance microscopy (SCM) and scanning Kelvin probe microscopy (SKPM). The calibrated doping concentration of the n-step Si layers was in th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31963

40. NIST Accomplishments in Nanotechnology
Series: Special Publication (NIST SP)
Report Number: 1052
Published: 1/1/2006
Authors: Michael T Postek, Joseph J Kopanski, David A Wollman
Abstract: This document includes a list of selected NIST accomplishments in nanotechnology for the period of fiscal years 2004 and 2005.  These accomplishments are grouped into the NNI s Program Component Areas (PCAs), which are defined in the text.   ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823212



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