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Author: joseph kopanski
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Displaying records 21 to 30 of 105 records.
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21. Spatial Resolution of Electrical Measurements Performed with Scanning Probe Microscope as a Function of Tip Shape
Published: 3/15/2010
Authors: Joseph J Kopanski, Ilona Sitnitsky, Vincent LaBella
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905391

22. Summer Undergraduate Research Fellowships (SURF) at the National Institute of Standards and Technology: A NSF/NIST Partnership
Published: 2/1/2010
Authors: Christopher C White, Chiara F Ferraris, Lisa Jean Fronczek, Joseph J Kopanski, David B Newell
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905488

23. Advanced Capacitance Metrology for Nanoelectronic Device Characterization
Published: 10/5/2009
Authors: Curt A Richter, Joseph J Kopanski, Yicheng Wang, Muhammad Yaqub Afridi, Xiaoxiao Zhu, D. E Ioannou, Qiliang Li, Chong Jiang
Abstract: We designed and fabricated a test chip (consisting of an array of metal-oxide-semiconductor (MOS) capacitors and metal-insulator-metal (MIM) capacitors ranging from 0.3 fF to 1.2 pF) for use in evaluating the performance of new measurement approaches ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903268

24. Enhanced Spatial Resolution Scanning Kelvin Force Microscopy Using Conductive Carbon Nanotube Tips
Published: 10/5/2009
Authors: Joseph J Kopanski, Paul McClure, Vladimir Mancevski
Abstract: The response of a scanning Kelvin force microscope (SKFM) was measured with conventional micromachined silicon tips coated with Au and with advanced tips terminated with a carbon nanotube (CNT). A simple model of the SKFM predicts enhanced spatial re ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903125

25. Test Chip to Evaluate Measurement Methods for Small Capacitances
Published: 3/30/2009
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Chong Jiang, Curt A Richter
Abstract: We designed and fabricated a test chip to help us evaluate the performance of new approaches to measurement of small capacitances (femto-Farads to atto-Farads range). The test chip consists of an array of metal-oxide-semiconductor capacitors, metal-i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901503

26. Scanning Probe Microscopy for Dielectric and Metal Characterization
Published: 6/10/2008
Authors: Joseph J Kopanski, Thomas R Walker
Abstract: The properties of both insulators and metals can be characterized capacitively with scanning probe microscopy, though the techniques employed are different. Intermittent contact scanning capacitance microscopy (IC-SCM) is a useful technique for chara ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32949

27. Scanning Kelvin Force Microscopy For Characterizing Nanostructures in Atmosphere
Published: 9/30/2007
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Stoyan Jeliazkov, Weirong Jiang, Thomas R Walker
Abstract: The Electrostatic Force Microscope (EFM) and its variants are of interest for the measurement of potential distributions within nanostructures, and for work function measurements of gate metals for next generation CMOS. In phase mode, the EFM measure ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32648

28. Surface Grafting of Polypyrrole onto Silicon Wafers
Published: 8/1/2007
Authors: Daeson Sohn, Hyoseung Moon, Michael J Fasolka, Naomi Eidelman, Sang-Mo Koo, Curt A Richter, Eun S. Park, Joseph J Kopanski, Eric J. Amis
Abstract: A micromolding technique in capillaries was adapted to make uniform patterns of polypyrrole (Ppy), and the conductivities of the patterns were measured by direct contact IV curves and conductance AFM methods. Noncovalently bound Ppy patterns have hig ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854462

29. Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application
Published: 5/16/2007
Authors: Qiliang Li, Xiaoxiao Zhu, Hao Xiong, Sang-Mo Koo, D. E Ioannou, Joseph J Kopanski, John S Suehle, Curt A Richter
Abstract: We report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32610

30. Precise Manipulation and Alignment of Single Nanowire
Published: 3/2/2007
Authors: Qiliang Li, Sang-Mo Koo, Curt A Richter, Monica D Edelstein, John E Bonevich, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Nanowires and nanotubes are being intensively investigated for nanoelectronic transport applications. The integration of such nanostructures into circuitry requires a simple, high-efficiency and low-cost strategy. Here we develop a single nanowire ma ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32233



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