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Author: joseph kopanski

Displaying records 61 to 70 of 108 records.
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61. Fast C2D: Software for Extracting 2D Carrier Profiles from Scanning Capacitance Microscopy Images
Published: 2/1/2001
Authors: Brian G. Rennex, Joseph J Kopanski, Jay F. Marchiando
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=24183

62. Gate Oxide Formation under Mild Conditions for Scanning Capacitance Microscopy
Published: 2/1/2001
Authors: Duncan McBride, Joseph J Kopanski
Abstract: Scanning Capacitance Microscopy (SCM) can be used to measure doping density in silicon with a spatial resolution of about 10 nm. In order to make such measurements on fabricated devices, the device must be cross-sectioned, and an oxide sufficient to ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=15651

63. Scanning Capacitance Microscopy for Measuring Device Carrier Profiles beyond the 100 nm Generation
Published: 12/31/2000
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
Abstract: The Scanning Capacitance Microscope (SCM) is a leading candidate for a metrology capable of measuring the two-dimensional (2-D) carrier profiles of cross-section silicon transistors. The International Technology Roadmap for Semiconductors (ITRS) ide ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=5920

64. In Situ and Ex Situ Spectroscopic Ellipsometry of Low-Temperature-Grown GaAs
Published: 7/30/2000
Authors: Donald A. Gajewski, Nhan V Nguyen, Jonathan E Guyer, Joseph J Kopanski, Curt A Richter, Joseph G. Pellegrino
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30331

65. Limitations of the Calibration Curve Method for Determining Dopant Profiles from Scanning Capacitance Microscope Measurements
Published: 3/1/2000
Authors: Jay F. Marchiando, Joseph J Kopanski, John Albers
Abstract: The calibration or conversion curve method (CCM) refers here to using a database of calculations of the capacitance done for a matrix set of model parameters, such as oxide thickness, uniform dopant density, etc., as one method for interpreting scann ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8592

66. Carrier Concentration Dependence of Scanning Capacitance Microscopy Signal in the Vicinity of P-N Junctions
Published: 1/1/2000
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
Abstract: Scanning capacitance microscopy was used to image 1) boron dopant gradients in p-type silicon, and 2) identical boron dopant gradients in n-type silicon. The bias voltage dependence of the apparent p-n junction location in the SCM images was measure ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=18890

67. Carrier Concentration Dependence of Scanning Capacitance Microscopy Signal in the Vicinity of P-N Junctions
Published: 6/1/1999
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
Abstract: Scanning capacitance microscopy was used to image 1) boron dopant gradients in p-type silicon, and 2) identical boron dopant gradients in n-type silicon. The bias voltage dependence of the apparent p-n junction location in the SCM images was measure ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=25560

68. Limitations of the Calibration Curve Method for Determining Dopant Profiles from Scanning Capacitance Microscope Measurements
Published: 6/1/1999
Authors: Jay F. Marchiando, Joseph J Kopanski, John Albers
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=25730

69. Dopant Characterization Round-Robin Study Performed on Two-Dimensional Test Structures Fabricated at Texas Instruments
Published: 12/31/1998
Authors: J. Vahakangas, Markku Lahti, M C Chang, H Edward, C F Machala, R S Martin, V Zavyalov, J S McMurray, C. C. Williams, P DeWolf, Vandevorst, D. Venables, S S Neogi, D L Ottaviani, Joseph J Kopanski, J F Machiando, Brian G. Rennex, J N Nxulamo, Y Li, D J Thomson
Abstract: The lack of a two-dimensional (2D) dopant standard, and hence, a priori knowledge of dopant distribution makes it impossible to unambiguously judge accuracy of any experimental or theoretical effort to characterize silicon doping in two dimensions. R ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28568

70. Intermittent-Contact Scanning Capacitance Microscopy Imaging and Modeling for Overlay Metrology
Published: 12/31/1998
Authors: Santos D Mayo, Joseph J Kopanski, William F Guthrie
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=27867



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