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Author: joseph kopanski

Displaying records 51 to 60 of 110 records.
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51. On calculating scanning capacitance microscopy data for a dopant profile in semiconductors
Published: 2/1/2004
Authors: Jay F. Marchiando, Joseph J Kopanski
Abstract: While the calculating the dopant profile from SCM data (the inverse problem) can be formulated as a regularized nonlinear least-squares optimization problem, wherein Poisson equations are solved within the quasi-static approximation in each iteration ...

52. PSPICE Analysis of a Scanning Capacitance Microscope Sensor
Published: 2/1/2004
Authors: Gyoung Ho Buh, Chi Tran, Joseph J Kopanski

53. Towards reproducible SCM Image Interpretation
Published: 2/1/2004
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex, David S Simons, R P Chaudhury
Abstract: SCM images, and the two-dimensional (2-D) dopant profiles extracted from them, show poor reproducibility from laboratory to laboratory. Major factors contributing to SCM image variability include: poor sample surface and oxide quality, excess carrier ...

54. AVS Newsletter Conference Report USJ-2003: The Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors
Published: 10/30/2003
Authors: Joseph J Kopanski, Erik Collart
Abstract: USJ-2003 provided an international forum for a broad ranging discussion of the current and future needs for ultra-shallow junctions, new ideas for fabrication of ultra-shallow junctions, recent advancements of analytical characterization techniques, ...

55. Atomic Force Microscope Laser Illumination Effects on a Sample and Its Application for Transient Spectroscopy
Published: 9/23/2003
Authors: Gyoung Ho Buh, Joseph J Kopanski
Abstract: A scanning capacitance microscope (SCM) is used to monitor the irradiation effect on a sample in a conventional atomic force microscope (AFM). The photo-excitation of carriers in a silicon sample caused by an AFM laser is measured from SCM capacitanc ...

56. Factors Influencing the Capacitance-voltage Characteristics Measured by the Scanning Capacitance Microscope
Published: 8/15/2003
Authors: Gyoung Ho Buh, Joseph J Kopanski, Jay F. Marchiando, Anthony Birdwell, Young Kuk
Abstract: A scanning capacitance microscope (SCM) can measure the local capacitance-voltage (C-V) characteristics of a metal-oxide-semiconductor structure formed by the SCM probe-tip and the doped semiconductor. When the SCM is operated in the standard configu ...

57. PSPICE Analysis of the Scanning Capacitance Microscope Sensor
Published: 4/27/2003
Authors: Gyoung Ho Buh, Chi Tran, Joseph J Kopanski
Abstract: A detailed analysis of the capacitance sensor from a scanning capacitance microscope (SCM) is presented. PSPICE circuit simulations are compared with experimental results. The general behavior of the SCM sensor and practical aspects of the sensor-tun ...

58. High Spatial Resolution Automatic Resistivity Mapping of Semiconductors
Published: 3/4/2003
Authors: M W. Matarazzo, Joseph J Kopanski

59. Scanning Probe Microscopes for the Electrical Characterization of Semiconductors
Published: 3/4/2003
Author: Joseph J Kopanski

60. Regression Procedure for Determining the Dopant Profile in Semiconductors from Scanning Capacitance Microscopy Data
Published: 11/15/2002
Authors: Jay F. Marchiando, Joseph J Kopanski
Abstract: To develop a regression procedure to correlate scanning capacitance microscope data with dopant concentration in three dimensions, the inverse problem is treated in two dimensions as an optimization problem that is formulated as a regularized nonline ...

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