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You searched on: Author: joseph kopanski

Displaying records 51 to 60 of 114 records.
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51. Experimental investigation of the dielectric-semiconductor interface with scanning capacitance microscopy
Published: 12/20/2004
Authors: Jihui Yang, Joseph J Kopanski, A Postula, M Bialkowski
Abstract: An experimental investigation of how interface states effect scanning capacitance microscopy (SCM) measurements is presented. Different sample polishing procedures were used to make SCM samples that would have different interface state densities, but ...

52. Semiconductor Dopant Profiling and Dielectric Characterization with Scanning Capacitance Microscopy
Published: 11/30/2004
Author: Joseph J Kopanski
Abstract: Scanning capacitance microscopy (SCM) has been commonly used to image dopant gradients in silicon and other semiconductors. As a mobile, high-resolution (to 10 nm) metal-oxide-semiconductor (MOS) probe, SCM also is a non-destructive, contactless tool ...

53. Influence of Interface Traps and Surface Mobility Degradation on Scanning Capacitance Microscopy Measurement
Published: 9/1/2004
Authors: Y. D. Hong, Tong Yeow Yeow, W. K. Chim, K. M. Wong, Joseph J Kopanski
Abstract: Scanning Capacitance Microscopy (SCM) is based on metal-oxide-semiconductor (MOS) theory. However, instead of the standard 100 kHz to 1 MHz signal used in conventional MOS capacitance-voltage measurement, SCM uses signal at 915 MHz. At this high freq ...

54. Quantitative Interpretation of Scanning Capcitance Microscope Images as Two-Dimensional Dopant Profiles
Published: 3/10/2004
Authors: Joseph J Kopanski, Jay F. Marchiando
Abstract: Scanning capacitance microscopy (SCM) is used as a qualitative analysis tool with multiple applications for failure analysis. SCM can measure the shape of dopant profiles, can ascertain if certain implants have been completed, can verify the conducti ...

55. On calculating scanning capacitance microscopy data for a dopant profile in semiconductors
Published: 2/1/2004
Authors: Jay F. Marchiando, Joseph J Kopanski
Abstract: While the calculating the dopant profile from SCM data (the inverse problem) can be formulated as a regularized nonlinear least-squares optimization problem, wherein Poisson equations are solved within the quasi-static approximation in each iteration ...

56. PSPICE Analysis of a Scanning Capacitance Microscope Sensor
Published: 2/1/2004
Authors: Gyoung Ho Buh, Chi Tran, Joseph J Kopanski

57. Towards reproducible SCM Image Interpretation
Published: 2/1/2004
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex, David S Simons, R P Chaudhury
Abstract: SCM images, and the two-dimensional (2-D) dopant profiles extracted from them, show poor reproducibility from laboratory to laboratory. Major factors contributing to SCM image variability include: poor sample surface and oxide quality, excess carrier ...

58. AVS Newsletter Conference Report USJ-2003: The Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors
Published: 10/30/2003
Authors: Joseph J Kopanski, Erik Collart
Abstract: USJ-2003 provided an international forum for a broad ranging discussion of the current and future needs for ultra-shallow junctions, new ideas for fabrication of ultra-shallow junctions, recent advancements of analytical characterization techniques, ...

59. Atomic Force Microscope Laser Illumination Effects on a Sample and Its Application for Transient Spectroscopy
Published: 9/23/2003
Authors: Gyoung Ho Buh, Joseph J Kopanski
Abstract: A scanning capacitance microscope (SCM) is used to monitor the irradiation effect on a sample in a conventional atomic force microscope (AFM). The photo-excitation of carriers in a silicon sample caused by an AFM laser is measured from SCM capacitanc ...

60. Factors Influencing the Capacitance-voltage Characteristics Measured by the Scanning Capacitance Microscope
Published: 8/15/2003
Authors: Gyoung Ho Buh, Joseph J Kopanski, Jay F. Marchiando, Anthony Birdwell, Young Kuk
Abstract: A scanning capacitance microscope (SCM) can measure the local capacitance-voltage (C-V) characteristics of a metal-oxide-semiconductor structure formed by the SCM probe-tip and the doped semiconductor. When the SCM is operated in the standard configu ...

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