NIST logo

Publications Portal

You searched on:
Author: joseph kopanski

Displaying records 41 to 50 of 105 records.
Resort by: Date / Title


41. Experimental investigation of interface states and photovoltaic effects on the scanning capacitance microscopy measurement for p-n junction dopant profiling
Published: 12/20/2004
Authors: Jihui Yang, Joseph J Kopanski, A Postula, M Bialkowski
Abstract: A special scanning capacitance microscopy (SCM) sample preparation method is exploited to make unipolar and p-n junction samples with different interface state densities and an identical oxide thickness. Using these samples, the interface states effe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31743

42. Experimental investigation of the dielectric-semiconductor interface with scanning capacitance microscopy
Published: 12/20/2004
Authors: Jihui Yang, Joseph J Kopanski, A Postula, M Bialkowski
Abstract: An experimental investigation of how interface states effect scanning capacitance microscopy (SCM) measurements is presented. Different sample polishing procedures were used to make SCM samples that would have different interface state densities, but ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31737

43. Semiconductor Dopant Profiling and Dielectric Characterization with Scanning Capacitance Microscopy
Published: 11/30/2004
Author: Joseph J Kopanski
Abstract: Scanning capacitance microscopy (SCM) has been commonly used to image dopant gradients in silicon and other semiconductors. As a mobile, high-resolution (to 10 nm) metal-oxide-semiconductor (MOS) probe, SCM also is a non-destructive, contactless tool ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31861

44. Influence of Interface Traps and Surface Mobility Degradation on Scanning Capacitance Microscopy Measurement
Published: 9/1/2004
Authors: Y. D. Hong, Tong Yeow Yeow, W. K. Chim, K. M. Wong, Joseph J Kopanski
Abstract: Scanning Capacitance Microscopy (SCM) is based on metal-oxide-semiconductor (MOS) theory. However, instead of the standard 100 kHz to 1 MHz signal used in conventional MOS capacitance-voltage measurement, SCM uses signal at 915 MHz. At this high freq ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31417

45. Quantitative Interpretation of Scanning Capcitance Microscope Images as Two-Dimensional Dopant Profiles
Published: 3/10/2004
Authors: Joseph J Kopanski, Jay F. Marchiando
Abstract: Scanning capacitance microscopy (SCM) is used as a qualitative analysis tool with multiple applications for failure analysis. SCM can measure the shape of dopant profiles, can ascertain if certain implants have been completed, can verify the conducti ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31471

46. On calculating scanning capacitance microscopy data for a dopant profile in semiconductors
Published: 2/1/2004
Authors: Jay F. Marchiando, Joseph J Kopanski
Abstract: While the calculating the dopant profile from SCM data (the inverse problem) can be formulated as a regularized nonlinear least-squares optimization problem, wherein Poisson equations are solved within the quasi-static approximation in each iteration ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31368

47. PSPICE Analysis of a Scanning Capacitance Microscope Sensor
Published: 2/1/2004
Authors: Gyoung Ho Buh, Chi Tran, Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31655

48. Towards reproducible SCM Image Interpretation
Published: 2/1/2004
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex, David S Simons, R P Chaudhury
Abstract: SCM images, and the two-dimensional (2-D) dopant profiles extracted from them, show poor reproducibility from laboratory to laboratory. Major factors contributing to SCM image variability include: poor sample surface and oxide quality, excess carrier ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31404

49. AVS Newsletter Conference Report USJ-2003: The Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors
Published: 10/30/2003
Authors: Joseph J Kopanski, Erik Collart
Abstract: USJ-2003 provided an international forum for a broad ranging discussion of the current and future needs for ultra-shallow junctions, new ideas for fabrication of ultra-shallow junctions, recent advancements of analytical characterization techniques, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31412

50. Atomic Force Microscope Laser Illumination Effects on a Sample and Its Application for Transient Spectroscopy
Published: 9/23/2003
Authors: Gyoung Ho Buh, Joseph J Kopanski
Abstract: A scanning capacitance microscope (SCM) is used to monitor the irradiation effect on a sample in a conventional atomic force microscope (AFM). The photo-excitation of carriers in a silicon sample caused by an AFM laser is measured from SCM capacitanc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30924



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series