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11. Nanotechnology with Atom Optics
Published: 11/1/2004
Authors: Jabez J McClelland, Shannon Bradley Hill, M Pichler, Robert Celotta
Abstract: A brief review of atom optics is presented, with emphasis on how it can be applied in the field of nanotechnology. Two specific examples are discussed: laser-focused atomic deposition and deterministic production of single atoms. Results are summar ...

12. Optics contamination studies in support of high-throughput EUV lithography tools
Published: 3/25/2011
Authors: Shannon Bradley Hill, Fardina Asikin, Lee J Richter, Steven E Grantham, Charles S Tarrio, Thomas B Lucatorto, Sergiy Yulin, Mark Schurmann, Viatcheslav Nesterenko, Torsten Feigl
Abstract: We report on optics contamination rates induced by exposure to broad-bandwidth, high-intensity EUV radiation peaked near 8 nm in a new beamline at the NIST synchrotron. The peak intensity of 50 mW/mm2 allows extension of previous investigations of c ...

13. Optics for Extreme Ultraviolet Lithography
Published: Date unknown
Authors: Steven E Grantham, Charles S Tarrio, Shannon Bradley Hill, Thomas B Lucatorto
Abstract: Extreme Ultraviolet Lithography (EUVL) is considered by many to be the next generation lithography that will fabricate integrated circuits in the next decade. Although EUVL is conceptually similar to optical or deep-UV lithography, it represents a m ...

14. Optics go to extremes in EUV lithography
Published: 1/1/2005
Authors: Steven E Grantham, Charles S Tarrio, Shannon Bradley Hill, Thomas B Lucatorto

15. Patterning of Octadecylsiloxane Self-assembled Monolayers on Si(100) using Ar(^u3^P^d0^,2) Atoms
Published: 5/1/1999
Authors: Shannon Bradley Hill, C Haich, F Dunning, G Walters, Jabez J McClelland, Robert Celotta, H Craighead, J Han, D Tannenbaum
Abstract: ^u^^d^ We report the use of metastable (Ar^u3^P^d0,2^) atoms and a physical mask to pattern octadecylsiloxane self-assembled monolayers grown directly onsilicon surfaces. The damage to the monolayer is confirmed using lateral force microscopy, change ...

16. Quantitative Measurement of Outgas Products From EUV Photoresists
Published: 3/14/2008
Authors: Charles S Tarrio, Bruce A Benner Jr, Robert Edward Vest, Steven E Grantham, Shannon Bradley Hill, Thomas B Lucatorto, Jay H Hendricks, Patrick J Abbott, Greg Denbeaux, Alin Antohe, Chimaobi Mbanaso, Kevin Orbek
Abstract: The photon-stimulated emission of organic molecules from the photoresist during exposure is a serious problem for extreme- ultraviolet lithography (EUVL) because the adsorption of the outgassing products on the EUV optics can lead to carbonization an ...

17. SURF III: A flexible Synchrotron Radiation Source for Radiometry and Research
Published: 9/1/2011
Authors: Uwe Arp, Charles W Clark, Lu Deng, Nadir S. Faradzhev, Alex P. Farrell, Mitchell L. Furst, Steven E Grantham, Edward W Hagley, Shannon Bradley Hill, Thomas B Lucatorto, Ping-Shine Shaw, Charles S Tarrio, Robert Edward Vest
Abstract: The calculability of synchrotron radiation (SR) makes electron storage rings wonderful light sources for radiometry. The broadband nature of SR allows coverage of the whole spectral region from the x-ray to the far-infrared. Compact low-energy storag ...

18. Saturation effects in solid state photodiodes and impact on EUVL pulse energy measurements,
Published: 1/1/2006
Authors: Robert Edward Vest, Shannon Bradley Hill, Steven E Grantham

19. The NIST EUV facility for advanced photoresist qualification using the witness-sample test
Published: 8/29/2011
Authors: Steven E Grantham, Charles S Tarrio, Shannon Bradley Hill, Lee J Richter, Thomas B Lucatorto, J. van Dijk, C. Kaya, N. Harned, R. Hoefnagels, M. Silova, J. Steinhoff
Abstract: Before being used in an extreme-ultraviolet (EUV) scanner, photoresists must first be qualified to ensure that they will not excessively contaminate the scanner optics or other parts of the vacuum environment of the scanner. At the National Institute ...

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