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Author: shannon hill
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Displaying records 11 to 15.
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11. Optics go to extremes in EUV lithography
Published: 1/1/2005
Authors: Steven E Grantham, Charles S Tarrio, Shannon Bradley Hill, Thomas B Lucatorto
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=101546

12. Patterning of Octadecylsiloxane Self-assembled Monolayers on Si(100) using Ar(^u3^P^d0^,2) Atoms
Published: 5/1/1999
Authors: Shannon Bradley Hill, C Haich, F Dunning, G Walters, Jabez J McClelland, Robert Celotta, H Craighead, J Han, D Tannenbaum
Abstract: ^u^^d^ We report the use of metastable (Ar^u3^P^d0,2^) atoms and a physical mask to pattern octadecylsiloxane self-assembled monolayers grown directly onsilicon surfaces. The damage to the monolayer is confirmed using lateral force microscopy, change ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620509

13. SURF III: A flexible Synchrotron Radiation Source for Radiometry and Research
Published: 9/1/2011
Authors: Uwe Arp, Charles W Clark, Lu Deng, Nadir Sabirovich Faradzhev, Alex P. Farrell, Mitchell L. Furst, Steven E Grantham, Edward Walter Hagley, Shannon Bradley Hill, Thomas B Lucatorto, Ping-Shine Shaw, Charles S Tarrio, Robert Edward Vest
Abstract: The calculability of synchrotron radiation (SR) makes electron storage rings wonderful light sources for radiometry. The broadband nature of SR allows coverage of the whole spectral region from the x-ray to the far-infrared. Compact low-energy storag ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906750

14. Saturation effects in solid state photodiodes and impact on EUVL pulse energy measurements,
Published: 1/1/2006
Authors: Robert Edward Vest, Shannon Bradley Hill, Steven E Grantham
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=101785

15. The NIST EUV facility for advanced photoresist qualification using the witness-sample test
Published: 8/29/2011
Authors: Steven E Grantham, Charles S Tarrio, Shannon Bradley Hill, Lee J Richter, Thomas B Lucatorto, J. van Dijk, C. Kaya, N. Harned, R. Hoefnagels, M. Silova, J. Steinhoff
Abstract: Before being used in an extreme-ultraviolet (EUV) scanner, photoresists must first be qualified to ensure that they will not excessively contaminate the scanner optics or other parts of the vacuum environment of the scanner. At the National Institute ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908029



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