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Displaying records 11 to 18.
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11. EUV component and system characterization at NIST for the support of extreme-ultraviolet lithography, ed. by R.S. Mackay
Published: 5/13/2005
Authors: S Grantham, Shannon Bradley Hill, Charles S Tarrio, Robert Edward Vest, Thomas B Lucatorto

12. Evaluation of alternative capping layers for EUVL mask ML blank, ed. by J.T. Weed and P.M. Martin
Published: 1/1/2005
Authors: P Yan, E Spiller, Eric M Gullikson, Shannon Bradley Hill

13. Optics go to extremes in EUV lithography
Published: 1/1/2005
Authors: Steven E Grantham, Charles S Tarrio, Shannon Bradley Hill, Thomas B Lucatorto

14. Nanotechnology with Atom Optics
Published: 11/1/2004
Authors: Jabez J McClelland, Shannon Bradley Hill, M Pichler, Robert Celotta
Abstract: A brief review of atom optics is presented, with emphasis on how it can be applied in the field of nanotechnology. Two specific examples are discussed: laser-focused atomic deposition and deterministic production of single atoms. Results are summar ...

15. A Fast, Deterministic Source of Single Cr Atoms
Published: 6/1/2003
Authors: Jabez J McClelland, Shannon Bradley Hill
Abstract: We produce single Cr atoms on demand by feedback control of loading and loss from a magneto-optical trap. We observe single-atom occupation probabilities of over 98% and efficient ejection at rates up to 10 Hz.

16. Characterization of an Infrared Spectrograph for Non-Contact Thermometry Applications Using a Sodium Heat Pipe Blackbody, ed. by A.E. Rozlosnik and R.B. Dinwiddie
Published: 1/1/2001
Authors: Benjamin K Tsai, J F Widmann, M Bundy, Shannon Bradley Hill

17. Patterning of Octadecylsiloxane Self-assembled Monolayers on Si(100) using Ar(^u3^P^d0^,2) Atoms
Published: 5/1/1999
Authors: Shannon Bradley Hill, C Haich, F Dunning, G Walters, Jabez J McClelland, Robert Celotta, H Craighead, J Han, D Tannenbaum
Abstract: ^u^^d^ We report the use of metastable (Ar^u3^P^d0,2^) atoms and a physical mask to pattern octadecylsiloxane self-assembled monolayers grown directly onsilicon surfaces. The damage to the monolayer is confirmed using lateral force microscopy, change ...

18. Optics for Extreme Ultraviolet Lithography
Published: Date unknown
Authors: Steven E Grantham, Charles S Tarrio, Shannon Bradley Hill, Thomas B Lucatorto
Abstract: Extreme Ultraviolet Lithography (EUVL) is considered by many to be the next generation lithography that will fabricate integrated circuits in the next decade. Although EUVL is conceptually similar to optical or deep-UV lithography, it represents a m ...

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