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Author: andras vladar

Displaying records 131 to 140 of 147 records.
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131. Inexpensive Digital Imaging?
Published: 6/1/1997
Authors: Michael T Postek, Andras Vladar
Abstract: The capture of digital images through the use of a frame grabber provides tremendous advantages to scanning electron microscopy. Accessory frame grabbers can range in price from very inexpensive to several thousand dollars. This work investigates the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820865

132. Performance Analysis Tool for Scanning Electron Microscopes Used in Semiconductor Metrology
Published: 4/1/1997
Authors: Michael T Postek, Andras Vladar, M P Davidson
Abstract: Scanning electron microscopes (SEM) are being utilized extensively in the production environment, and these instruments are approaching full automation. Once a human operator is no longer monitoring the instrument''s performance and multiple instrume ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820867

133. High-Accuracy Critical-Dimension Metrology Using a Scanning Electron Microscope
Published: 12/31/1996
Authors: J R. Lowney, Andras Vladar, Michael T Postek
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=24182

134. Is Your Scanning Electron Microscope Hi-Fi?
Published: 12/7/1996
Authors: Andras Vladar, Michael T Postek, S Davilla
Abstract: The scanning electron microscope (SEM) historically has been used mainly as an image-producing device and, in spite of certain obvious and sometimes serious electronics problems, serves in this function as an acceptable and effective instrument for m ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820784

135. High-Accuracy Critical-Dimension Metrology Using a Scanning Electron Microscope
Published: 5/1/1996
Authors: J R. Lowney, Andras Vladar, Michael T Postek
Abstract: Two Monte Carlo computer codes have been written to simulate the transmitted-, backscattered-, and secondary-electron signals from targets in a scanning electron microscope. The first discussed, MONSEL-II, is applied to semi-infinite lines produced l ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820795

136. SEM Performance Evaluation Using the Sharpness Criterion
Published: 5/1/1996
Authors: Michael T Postek, Andras Vladar
Abstract: Fully automated or semi-automated scanning electron microscopes (SEM) are now commonly used in semiconductor production and other forms of manufacturing. The industry requires that an automated instrument must be routinely capable of 5 nm resolution ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820809

137. Models for Relating Scanning Electron Microscopy Images to Measured Artifacts
Published: 4/1/1996
Authors: Michael T Postek, Andras Vladar, J R. Lowney
Abstract: A specific example of a technique we developed to enhance the information obtained from SEM images is the extraction of an approximate profile corresponding to an electron beam with zero beam diameter from one with a finite beam diameter. Results wer ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820810

138. Digital Imaging for Scanning Electron Microscopy
Published: 1/1/1996
Authors: Michael T Postek, Andras Vladar
Abstract: The development and application of digital imaging technology has been one of the major advancements in scanning electron microscopy (SEM) during the past several years. This digital revolution has been brought about by significant progress in semico ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820807

139. SEM Image Sharpness Analysis
Published: 1/1/1996
Authors: Michael T Postek, Andras Vladar
Abstract: The technique described here, utilizing the sharpness concept, is facilitated by the use of the FFT techniques to analyze the electron micrograph to obtain the evaluation. This is not the first application of Fourier techniques to SEM images, but it ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820808

140. Workshop Report 3: Edge Positions From Scanning Electron Microscope Signals by Comparing Models With Measure
Published: 8/6/1995
Authors: J R. Lowney, Michael T Postek, Andras Vladar
Abstract: There is a pressing need in the semiconductor industry to determine the dimensions of lithographically produced features on wafers and masks down to the l0?nm level of accuracy. Such measurements involve the accurate location of line edges, the subtr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820745



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