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Author: andras vladar

Displaying records 111 to 120 of 150 records.
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111. Shape-Sensitive Linewidth Measurement with the SEM Using a Model-Based Library
Published: 3/1/2001
Authors: John S Villarrubia, Andras Vladar, J R. Lowney, Michael T Postek
Abstract: In semiconductor electronics manufacturing, device performance often depends upon size. For example, microprocessor speed is linked to the width of transistor gates. Accurate measurement of feature width is an important but challenging problem. When ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821590

112. NIST/SEMATECH Collaboration: Application of Nano-Tips to Production CD-SEMs
Published: 1/1/2001
Authors: Andras Vladar, Michael T Postek
Abstract: This is the final report of a two-part study about the application of nano-tips to critical dimension (CD) scanning electron microscope (SEMs) used in integrated circuit production. Nano-tips are essentially very sharp electron emitter tips that offe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822430

113. SEM Sentinel - SEM Performance Measurement System
Published: 1/1/2001
Authors: Bradley N Damazo, Andras Vladar, Alice V. Ling, M. Alkan Donmez, Michael T Postek, Crossley E Jayewardene
Abstract: This paper describes the design and implementation of a system for monitoring the performance of a critical dimension measurement scanning electron microscope (CD-SEM). Experiments were performed for tests involving diagnosis of the vacuum system an ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823137

114. Linewidth Measurement Intercomparison on a BESOI Sample
Published: 12/31/2000
Authors: A. E. Villarrubia, Andras Vladar, J R. Lowney, Michael T Postek, Richard A Allen, Michael W Cresswell, Rathindra Ghoshtagore
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=2684

115. NIST/SEMATECH Collaboration: Application of Nano-Tips to Production CD-SEMs
Published: 11/15/2000
Authors: Andras Vladar, Michael T Postek
Abstract: This work documents the first part of a two-part study about the application of nano-tips to critical dimension (CD) scanning electron microscopes used in integrated circuit production.  Nano-tips, by comparison to all conventional cold, thermal ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823133

116. Linewidth Intercomparison on a Polysilicon Sample
Published: 11/1/2000
Authors: John S Villarrubia, Andras Vladar, Michael T Postek, Ronald G Dixson
Abstract: Not available.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821574

117. Benchmarking of Advanced CD-SEMs Against the New Unified Specification for Sub-0.18 Micrometer Lithography
Published: 8/18/2000
Authors: A Deleporte, J Allgair, C Archie, G Banke, Michael T Postek, J Schlesinger, Andras Vladar, A Yanof
Abstract: The Advanced Metrology Advisory Group (AMAG) comprised of representatives from International SEMATECH consortium member companies and the National Institute of Standards and Technology have joined to develop a new unified specification for an advance ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=824620

118. Benchmarking of Advanced CD-SEMs Against the New Unified Specification for Sub-0.18 Micrometer Lithography
Published: 6/2/2000
Authors: A Deleporte, J Allgair, C Archie, G Banke, Michael T Postek, J Schlesinger, Andras Vladar, A Yanof
Abstract: The Advanced Metrology Advisory Group (AMAG) comprised of representatives from International SEMATECH consortium member companies and the National Institute of Standards and Technology have joined to develop a new unified specification for an advance ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821785

119. Is a Production Level Scanning Electron Microscope Linewidth Standard Possible?
Published: 6/1/2000
Authors: Michael T Postek, Andras Vladar, John S Villarrubia
Abstract: Metrology will remain a pricipal enabler for the development and manufacture of future generations of semiconductor devices. With the potential of 130 nm and 100 nm linewidths and high aspect ratio structures, the scanning electron microscope (SEM) r ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823127

120. Is a Production-Level Scanning Electron Microscope Linewidth Standard Possible?
Published: 6/1/2000
Authors: Michael T Postek, Andras Vladar, John S Villarrubia
Abstract: Metrology will remain a principal enabler for the development and manufacture of future generations of semiconductor devices. With the potential of 130 and l00-nanometer linewidths and high aspect ratio structures, the scanning electron microscope (S ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820974



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