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You searched on: Author: andras vladar

Displaying records 101 to 110 of 158 records.
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101. Two-dimensional Simulation Modeling in Imaging and Metrology Research
Published: 7/1/2002
Authors: Michael T Postek, Andras Vladar, J R. Lowney, William J. Keery
Abstract: Traditional Monte Carlo modeling of the electron beam-specimen interactions in a scanning electron microscope (SEM) produces information about electron beam penetration and output signal generation at either a single beam-landing location, or multipl ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821738

102. Silicon Nanostructures Fabricated by Scanning Probe Oxidation and Tetramethyl Ammonium Hydroxide Etching
Published: 6/15/2002
Authors: F S Chien, W F Hsieh, S Gwo, Andras Vladar, John A Dagata
Abstract: Fabrication of silicon nanostructures is a key technique for the development of monolithically integrated optoelectronic circuits. We demonstrate that the process of scanning probe lithography (SPL) and anisotropic TMAH etching is a low-cost and reli ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821774

103. Design and Development of a Measurement and Control System for Measuring SEM Magnification Calibration Samples
Published: 6/1/2002
Authors: Crossley E Jayewardene, William J. Keery, Michael T Postek, Andras Vladar, Bradley N Damazo
Abstract: The National Institute of Standards and Technology (NIST) has provided industry with a scanning electron microscope (SEM) magnification calibration sample Reference Material (RM) 8090. The certified, Standard Reference Material (SRM) version, SRM 209 ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821755

104. Studies of Samples Having Shallow Surface Topography by the Low-Loss Electron (LLE) Method in the Scanning Electron Microscope (SEM)
Published: 3/1/2002
Authors: O C Wells, M Mcglashen-powell, Michael T Postek, Andras Vladar
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821793

105. Silicon Nanostructures Fabricated by Scanning Probe Lithography and TMAH Etching
Published: 1/1/2002
Authors: F S Chien, W F Hsieh, S Gwo, Andras Vladar, John A Dagata
Abstract: Fabrication of silicon nanostructures is a key technique for the development of monolithically integrated optoelectronic circuits. We demonstrate that the process of scanning probe lithography (SPL) and anisotropic TMAH etching is a low-cost and rel ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823149

106. Critical Dimension Metrology and the Scanning Electron Microscope
Published: 12/1/2001
Authors: Michael T Postek, Andras Vladar
Abstract: Metrology is a principal enabler for the development and manufacture of current and future generations of semiconductor devices. With the potential of 130-nm, and 100-nm, and even smaller linewidths and high-aspect-ratio structures, the scanning ele ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823129

107. Application of the Low-Loss Scanning Electron Microscope Image to Integrated Circuit Technology Part II - Chemically-Mechanically Planarized Samples
Published: 11/1/2001
Authors: O C Wells, M Mcglashen-powell, Andras Vladar, Michael T Postek
Abstract: Chemical-mechanical planarization (CMP) is a process that gives a flat surface on a silicon wafer by removing material from above a chosen level. This flat surface must then be reviewed for scratches and other topographic defects. This inspection has ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821585

108. The APEX Method and Real-Time Blind Deconvolution of Scanning Electron Microscope Imagery
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 6835
Published: 11/1/2001
Authors: Alfred S Carasso, D S Bright, Andras Vladar
Abstract: Loss of resolution due to image blurring is a major concern in electron microscopy. The point spread function describing that blur is generally unknown. This paper discusses the use of a recently developed FFT-based direct blind deconvolution proced ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=50987

109. Trial Shape-Sensitive Linewidth Measurement System
Published: 11/1/2001
Authors: John S Villarrubia, Andras Vladar, Michael T Postek
Abstract: This is a report for a project to develop a scanning electron microscope (SEM) based shape-sensitive linewidth measurement system by improving the method by improving the method by which SEM data are analyzed. We report significant developments in al ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822433

110. Application of the Low-Loss Scanning Electron Microscope Image to Integrated Circuit Technology Part 1-Applications to Accurate Dimension Measurements
Published: 9/1/2001
Authors: Michael T Postek, Andras Vladar, O C Wells, J R. Lowney
Abstract: Scanning electron microscopes are the most extensively used tools for dimensional metrology and defect inspection for integrated circuit technologies with 180 nm and smaller features. Currently almost all SEMs are designed to collect as many electron ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821584



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