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You searched on: Author: andras vladar

Displaying records 101 to 110 of 166 records.
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101. Application of High Pressure/Environmental Scanning Electron Microscopy to Photomask Dimensional Metrology
Published: 1/1/2003
Authors: Michael T Postek, Andras Vladar
Abstract: The application of high pressure or environmental microscopy techniques is not new to scanning electron microscopy. However, application of this methodology to semiconductor metrology is new because of the combined need for implementation of high res ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821965

102. Information Transfer Capability and Signal Processing Performance of Modern Scanning Electron Microscopes
Published: 1/1/2003
Authors: Zsolt Radi, Andras Vladar, Michael T Postek
Abstract: The scanning electron microscope (SEM) produces images with signals generated through the interaction of the primary electrons and the sample material. The proper choice of electron beam forming and imaging parameters is essential to collect relevant ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821971

103. Is Low Accelerating Voltage Always the Best for Semiconductor Inspection and Metrology?
Published: 1/1/2003
Authors: Michael T Postek, Andras Vladar
Abstract: An alternative technique for semiconductor metrology and inspection that minimizes, if not eliminates the sample charging is environmental or high pressure scanning electron microscopy. It offers the advantage and possible application of higher landi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821968

104. Photomask Dimensional Metrology in the SEM Part I: Has Anything Really Changed?
Published: 1/1/2003
Authors: Michael T Postek, Andras Vladar, Marylyn H. Bennett
Abstract: Photomask dimensional metrology in the scanning electron microscope (SEM) has not evolved as rapidly as the metrology of resists and integrated circuit features on wafers. This has been due partly to the 4x (or 5x) reduction in the optical steppers a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822020

105. Photomask Dimensional Metrology in the SEM: Has Anything Really Changed?
Published: 12/1/2002
Authors: Michael T Postek, Andras Vladar, Marylyn H. Bennett
Abstract: Photomask dimensional metrology in the scanning electron microscope (SEM) has not evolved as rapidly as the metrology of resists and integrated circuit features on wafers. This has been due partly to the 4x (or 5x) reduction in the optical steppers a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821958

106. APEX Method and Real-Time Blind Deconvolution of Scanning Electron Microscope Imagery
Published: 10/1/2002
Authors: Alfred S Carasso, David Seymour Bright, Andras Vladar
Abstract: Loss of resolution due to image blurring is a major concern in electron microscopy. The point spread function describing that blur is generally unknown. Wer discuss the use of a recently developed fast Fourier transform (FFT)-based direct (nonitera ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831241

107. Scanning Electron Microscope Analog of Scatterometry
Published: 7/1/2002
Authors: John S Villarrubia, Andras Vladar, J R. Lowney, Michael T Postek
Abstract: Optical scatterometry has attracted a great deal of interest for linewidth measurement due to its high repeatability and capability of measuring sidewall shape. We have developed an analogous and complementary technique for the scanning electron micr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821756

108. Two-Dimensional Simulation and Modeling in Scanning Electron Microscope Imaging and Metrology Research
Published: 7/1/2002
Authors: Michael T Postek, Andras Vladar, J R. Lowney, William J. Keery
Abstract: Traditional Monte Carlo modeling of the electron beam specimen interactions in a scanning electron microscope (SEM) produces information about electron beam penetration and output signal generation at either a single beam landing location, or multipl ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822435

109. Two-dimensional Simulation Modeling in Imaging and Metrology Research
Published: 7/1/2002
Authors: Michael T Postek, Andras Vladar, J R. Lowney, William J. Keery
Abstract: Traditional Monte Carlo modeling of the electron beam-specimen interactions in a scanning electron microscope (SEM) produces information about electron beam penetration and output signal generation at either a single beam-landing location, or multipl ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821738

110. Silicon Nanostructures Fabricated by Scanning Probe Oxidation and Tetramethyl Ammonium Hydroxide Etching
Published: 6/15/2002
Authors: F S Chien, W F Hsieh, S Gwo, Andras Vladar, John A Dagata
Abstract: Fabrication of silicon nanostructures is a key technique for the development of monolithically integrated optoelectronic circuits. We demonstrate that the process of scanning probe lithography (SPL) and anisotropic TMAH etching is a low-cost and reli ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821774



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