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You searched on: Author: andras vladar

Displaying records 101 to 110 of 154 records.
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101. Silicon Nanostructures Fabricated by Scanning Probe Lithography and TMAH Etching
Published: 1/1/2002
Authors: F S Chien, W F Hsieh, S Gwo, Andras Vladar, John A Dagata
Abstract: Fabrication of silicon nanostructures is a key technique for the development of monolithically integrated optoelectronic circuits. We demonstrate that the process of scanning probe lithography (SPL) and anisotropic TMAH etching is a low-cost and rel ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823149

102. Critical Dimension Metrology and the Scanning Electron Microscope
Published: 12/1/2001
Authors: Michael T Postek, Andras Vladar
Abstract: Metrology is a principal enabler for the development and manufacture of current and future generations of semiconductor devices. With the potential of 130-nm, and 100-nm, and even smaller linewidths and high-aspect-ratio structures, the scanning ele ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823129

103. Application of the Low-Loss Scanning Electron Microscope Image to Integrated Circuit Technology Part II - Chemically-Mechanically Planarized Samples
Published: 11/1/2001
Authors: O C Wells, M Mcglashen-powell, Andras Vladar, Michael T Postek
Abstract: Chemical-mechanical planarization (CMP) is a process that gives a flat surface on a silicon wafer by removing material from above a chosen level. This flat surface must then be reviewed for scratches and other topographic defects. This inspection has ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821585

104. The APEX Method and Real-Time Blind Deconvolution of Scanning Electron Microscope Imagery
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 6835
Published: 11/1/2001
Authors: Alfred S Carasso, D S Bright, Andras Vladar
Abstract: Loss of resolution due to image blurring is a major concern in electron microscopy. The point spread function describing that blur is generally unknown. This paper discusses the use of a recently developed FFT-based direct blind deconvolution proced ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=50987

105. Trial Shape-Sensitive Linewidth Measurement System
Published: 11/1/2001
Authors: John S Villarrubia, Andras Vladar, Michael T Postek
Abstract: This is a report for a project to develop a scanning electron microscope (SEM) based shape-sensitive linewidth measurement system by improving the method by improving the method by which SEM data are analyzed. We report significant developments in al ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822433

106. Application of the Low-Loss Scanning Electron Microscope Image to Integrated Circuit Technology Part 1-Applications to Accurate Dimension Measurements
Published: 9/1/2001
Authors: Michael T Postek, Andras Vladar, O C Wells, J R. Lowney
Abstract: Scanning electron microscopes are the most extensively used tools for dimensional metrology and defect inspection for integrated circuit technologies with 180 nm and smaller features. Currently almost all SEMs are designed to collect as many electron ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821584

107. Active Monitoring and Control of Electron-Beam-Induced Contaminaition
Published: 8/1/2001
Authors: Andras Vladar, Michael T Postek, R Vane
Abstract: The vacuum system of all scanning electron microscopes (SEMs), even in the so-called clean instruments, have certain hydrocarbon residues that the vacuum pumps do not effectively remove. The cleanliness of the vacuum and the amount and nature of the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823135

108. Active Monitoring and Control of Electron-Beam-Induced Contamination
Published: 8/1/2001
Authors: Andras Vladar, Michael T Postek, R Vane
Abstract: The vacuum systems of all scanning electron microscopes (SEMs), even in the so-called clean instruments, have certain hydrocarbon residues that the vacuum pumps do not effectively remove. The cleanliness of the vacuum and the amount and nature of the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821580

109. Edge Determination for Polycrystalline Silicon Lines on Gate Oxide
Published: 8/1/2001
Authors: John S Villarrubia, Andras Vladar, J R. Lowney, Michael T Postek
Abstract: In a scanning electron microscope (SEM) top-down secondary electron image, areas within a few tens of nanometers of the line edges arc characteristically brighter than the rest of the image. In general, the shape of the secondary electron signal with ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821577

110. Reference Material 8091: New Scanning Electron Microscope Sharpness Standard
Published: 8/1/2001
Authors: Andras Vladar, Michael T Postek, Nien F Zhang, Robert D. Larrabee, Samuel N Jones, Russell E Hajdaj
Abstract: All scanning electron microscope-based inspection instruments, whether they are in a laboratory or on the production line, slowly lose their performance and then the instrument is no longer capable of providing as good quality, sharp images as before ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821578



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