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You searched on: Author: andras vladar

Displaying records 101 to 110 of 159 records.
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101. Two-Dimensional Simulation and Modeling in Scanning Electron Microscope Imaging and Metrology Research
Published: 7/1/2002
Authors: Michael T Postek, Andras Vladar, J R. Lowney, William J. Keery
Abstract: Traditional Monte Carlo modeling of the electron beam specimen interactions in a scanning electron microscope (SEM) produces information about electron beam penetration and output signal generation at either a single beam landing location, or multipl ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822435

102. Two-dimensional Simulation Modeling in Imaging and Metrology Research
Published: 7/1/2002
Authors: Michael T Postek, Andras Vladar, J R. Lowney, William J. Keery
Abstract: Traditional Monte Carlo modeling of the electron beam-specimen interactions in a scanning electron microscope (SEM) produces information about electron beam penetration and output signal generation at either a single beam-landing location, or multipl ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821738

103. Silicon Nanostructures Fabricated by Scanning Probe Oxidation and Tetramethyl Ammonium Hydroxide Etching
Published: 6/15/2002
Authors: F S Chien, W F Hsieh, S Gwo, Andras Vladar, John A Dagata
Abstract: Fabrication of silicon nanostructures is a key technique for the development of monolithically integrated optoelectronic circuits. We demonstrate that the process of scanning probe lithography (SPL) and anisotropic TMAH etching is a low-cost and reli ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821774

104. Design and Development of a Measurement and Control System for Measuring SEM Magnification Calibration Samples
Published: 6/1/2002
Authors: Crossley E Jayewardene, William J. Keery, Michael T Postek, Andras Vladar, Bradley N Damazo
Abstract: The National Institute of Standards and Technology (NIST) has provided industry with a scanning electron microscope (SEM) magnification calibration sample Reference Material (RM) 8090. The certified, Standard Reference Material (SRM) version, SRM 209 ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821755

105. Studies of Samples Having Shallow Surface Topography by the Low-Loss Electron (LLE) Method in the Scanning Electron Microscope (SEM)
Published: 3/1/2002
Authors: O C Wells, M Mcglashen-powell, Michael T Postek, Andras Vladar
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821793

106. Silicon Nanostructures Fabricated by Scanning Probe Lithography and TMAH Etching
Published: 1/1/2002
Authors: F S Chien, W F Hsieh, S Gwo, Andras Vladar, John A Dagata
Abstract: Fabrication of silicon nanostructures is a key technique for the development of monolithically integrated optoelectronic circuits. We demonstrate that the process of scanning probe lithography (SPL) and anisotropic TMAH etching is a low-cost and rel ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823149

107. Critical Dimension Metrology and the Scanning Electron Microscope
Published: 12/1/2001
Authors: Michael T Postek, Andras Vladar
Abstract: Metrology is a principal enabler for the development and manufacture of current and future generations of semiconductor devices. With the potential of 130-nm, and 100-nm, and even smaller linewidths and high-aspect-ratio structures, the scanning ele ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823129

108. Application of the Low-Loss Scanning Electron Microscope Image to Integrated Circuit Technology Part II - Chemically-Mechanically Planarized Samples
Published: 11/1/2001
Authors: O C Wells, M Mcglashen-powell, Andras Vladar, Michael T Postek
Abstract: Chemical-mechanical planarization (CMP) is a process that gives a flat surface on a silicon wafer by removing material from above a chosen level. This flat surface must then be reviewed for scratches and other topographic defects. This inspection has ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821585

109. The APEX Method and Real-Time Blind Deconvolution of Scanning Electron Microscope Imagery
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 6835
Published: 11/1/2001
Authors: Alfred S Carasso, D S Bright, Andras Vladar
Abstract: Loss of resolution due to image blurring is a major concern in electron microscopy. The point spread function describing that blur is generally unknown. This paper discusses the use of a recently developed FFT-based direct blind deconvolution proced ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=50987

110. Trial Shape-Sensitive Linewidth Measurement System
Published: 11/1/2001
Authors: John S Villarrubia, Andras Vladar, Michael T Postek
Abstract: This is a report for a project to develop a scanning electron microscope (SEM) based shape-sensitive linewidth measurement system by improving the method by improving the method by which SEM data are analyzed. We report significant developments in al ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822433



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