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Author: john villarrubia
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1. Optimizing Hybrid Metrology through a Consistent Multi-Tool Parameter Set and Uncertainty Model
Published: 4/14/2014
Authors: Richard M Silver, Bryan M Barnes, Nien F Zhang, Hui Zhou, Andras Vladar, John S Villarrubia, Regis J Kline, Daniel Franklin Sunday, Alok Vaid
Abstract: There has been significant interest in hybrid metrology as a novel method for reducing overall measurement uncertainty and optimizing measurement throughput (speed) through rigorous combinations of two or more different measurement techniques into a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915846

2. The Effect of Tip Size in Calibration of Surface Roughness Specimens with Rectangular Profiles
Published: 9/2/2013
Authors: Jun-Feng Song, Thomas B Renegar, Johannes A Soons, Balasubramanian Muralikrishnan, John S Villarrubia, Xiaoyu A Zheng, Theodore Vincent Vorburger
Abstract: For the calibration of rectangular and trapezoidal profile roughness specimens, stylus tip will increase profile peak width and decrease valley width, which may cause the Ra changes (either increase or decrease, depends on the profile shape). Someti ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911850

3. Modeling Scanning Electron Microscope Measurements with Charging
Published: 4/3/2013
Author: John S Villarrubia
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912857

4. Can We Get 3D CD Metrology Right?
Published: 4/19/2012
Authors: Andras Vladar, John S Villarrubia, Michael T Postek, Petr Cizmar
Abstract: Our world is three-dimensional, so are the integrated circuits (ICs), they have always been. In the past, for a long time, we‰ve been very fortunate, because it was enough to measure the critical dimension (CD), the width of the resist line to keep I ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911117

5. SEM imaging of ultra-high aspect ratio hole features
Published: 3/29/2012
Authors: John S Villarrubia, Aron Cepler, Benjamin D. Bunday, Bradley Thiel
Abstract: In-line, non-destructive process control metrology of high aspect ratio (HAR) holes and trenches has long been a known gap in metrology. Imaging the bottoms of at-node size beyond 10:1 AR contact holes in oxide has not yet been demonstrated. Neverth ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910884

6. Stylus Tip-Size Effect on the Calibration of Periodic Roughness Specimens with Rectangular Profiles
Published: 3/21/2012
Authors: Thomas B Renegar, Johannes A Soons, Balasubramanian Muralikrishnan, John S Villarrubia, Xiaoyu A Zheng, Theodore Vincent Vorburger, Jun-Feng Song
Abstract: Stylus instruments are widely used for surface characterization. It is well known that the size and shape of the stylus tip affects the measured surface geometry and parameters. In most cases, increasing the tip size decreases the measured Ra value b ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911079

7. VCI Simulation with Semiconductor Device Models: Test Report
Published: 2/29/2012
Author: John S Villarrubia
Abstract: JMONSEL, an electron beam imaging simulator, has been modified to permit conducting regions of a sample to be designated as unconnected to an external source or sink of charge (floating) or, alternatively, to be connected with a user-specified relaxa ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910799

8. Proximity-associated errors in contour metrology
Published: 3/31/2010
Authors: John S Villarrubia, Ronald G Dixson, Andras Vladar
Abstract: In contour metrology the CD-SEM (critical dimension scanning electron microscope) assigns a continuous boundary to extended features in an image. The boundary is typically assigned as a simple function of the signal intensity, for example by a bright ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905141

9. Nanometrology Solutions Using an Ultra-High Resolution In-lens SEM
Published: 9/1/2009
Authors: Michael T Postek, Andras Vladar, John S Villarrubia
Abstract: The imaging and measurement of nanostructures such as particles, carbon nanotubes, and quantum dots have placed new demands on the high resolution imaging capabilities of scanning electron microscopes. A barrier to accurate dimensional metrology is t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902308

10. Sensitivity of SEM width measurements to model assumptions
Published: 3/31/2009
Authors: John S Villarrubia, Zejun Ding
Abstract: The most accurate width measurements in a scanning electron microscope (SEM) require raw images to be corrected for instrumental artifacts. Corrections are based upon a physical model that describes the sample-instrument interaction. Models differ in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901733



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