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1. Can We Get 3D CD Metrology Right?
Andras Vladar, John S Villarrubia, Michael T Postek, Petr Cizmar
Our world is three-dimensional, so are the integrated circuits (ICs), they have always been. In the past, for a long time, we’ve been very fortunate, because it was enough to measure the critical dimension (CD), the width of the resist line to keep I ...
2. SEM imaging of ultra-high aspect ratio hole features
John S Villarrubia, Aron Cepler, Benjamin D. Bunday, Bradley Thiel
In-line, non-destructive process control metrology of high aspect ratio (HAR) holes and trenches has long been a known gap in metrology. Imaging the bottoms of at-node size beyond 10:1 AR contact holes in oxide has not yet been demonstrated. Neverth ...
3. Stylus Tip-Size Effect on the Calibration of Periodic Roughness Specimens with Rectangular Profiles
Thomas B Renegar, Johannes A Soons, Balasubramanian Muralikrishnan, John S Villarrubia, Xiaoyu A Zheng, Theodore Vincent Vorburger, Jun-Feng Song
Stylus instruments are widely used for surface characterization. It is well known that the size and shape of the stylus tip affects the measured surface geometry and parameters. In most cases, increasing the tip size decreases the measured Ra value b ...
4. VCI Simulation with Semiconductor Device Models: Test Report
John S Villarrubia
JMONSEL, an electron beam imaging simulator, has been modified to permit conducting regions of a sample to be designated as unconnected to an external source or sink of charge (floating) or, alternatively, to be connected with a user-specified relaxa ...
5. Proximity-associated errors in contour metrology
John S Villarrubia, Ronald G Dixson, Andras Vladar
In contour metrology the CD-SEM (critical dimension scanning electron microscope) assigns a continuous boundary to extended features in an image. The boundary is typically assigned as a simple function of the signal intensity, for example by a bright ...
6. Nanometrology Solutions Using an Ultra-High Resolution In-lens SEM
Michael T Postek, Andras Vladar, John S Villarrubia
The imaging and measurement of nanostructures such as particles, carbon nanotubes, and quantum dots have placed new demands on the high resolution imaging capabilities of scanning electron microscopes. A barrier to accurate dimensional metrology is t ...
7. Sensitivity of SEM width measurements to model assumptions
John S Villarrubia, Zejun Ding
The most accurate width measurements in a scanning electron microscope (SEM) require raw images to be corrected for instrumental artifacts. Corrections are based upon a physical model that describes the sample-instrument interaction. Models differ in ...
8. Blind estimation of general tip shape in AFM imaging
Fenglei Tian, Xiaoping Qian, John S Villarrubia
The use of flared tip and bi-directional servo control in some recent atomic force microscopes (AFM) has made it possible for these advanced AFMs to image structures of general shapes with undercuts and reentrant surfaces. Since AFM images are distor ...
9. Line Width Roughness and Cross Sectional Measurements of Sub-50 nm Structures with CD-SAXS and CD-SEM
Chengqing C. Wang, Ronald Leland Jones, Kwang-Woo Choi, Christopher L Soles, Eric K Lin, Wen-Li Wu, James S Clarke, John S Villarrubia, Benjamin Bunday
Critical dimension small angle x-ray scattering (CD-SAXS) is a measurement platform which is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) nm in pitch with sub nm precision. These capabili ...
10. Monte Carlo Modeling of Secondary Electron Imaging in Three Dimensions
John S Villarrubia, Nicholas W m Ritchie, J R. Lowney