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Author: john villarrubia
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1. 3D Monte Carlo modeling of the SEM: Are there applications to photomask metrology?
Published: 10/23/2014
Authors: John S Villarrubia, Andras Vladar, Michael T Postek
Abstract: The ability to model the effect of fields due to charges trapped in insulators with floating conductors has been added to JMONSEL (Java Monte Carlo simulator for Secondary Electrons) and applied to a simple photomask metal on glass geometry. These ca ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=917204

2. Optimizing Hybrid Metrology through a Consistent Multi-Tool Parameter Set and Uncertainty Model
Published: 4/14/2014
Authors: Richard M Silver, Bryan M Barnes, Nien F Zhang, Hui H. Zhou, Andras Vladar, John S Villarrubia, Regis J Kline, Daniel Franklin Sunday, Alok Vaid
Abstract: There has been significant interest in hybrid metrology as a novel method for reducing overall measurement uncertainty and optimizing measurement throughput (speed) through rigorous combinations of two or more different measurement techniques into a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915846

3. 10 nm Three-Dimensional CD-SEM Metrology
Published: 4/10/2014
Authors: Andras Vladar, John S Villarrubia, Bin Ming, Regis J Kline, Jasmeet Chawla, Scott List
Abstract: The shape and dimensions of a challenging pattern have been measured using a model-based library scanning electron microscope (MBL SEM) technique. The sample consisted of a 4-line repeating pattern. Lines were narrow (10 nm), asymmetric (different ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915705

4. The Effect of Tip Size in Calibration of Surface Roughness Specimens with Rectangular Profiles
Published: 9/2/2013
Authors: Jun-Feng Song, Thomas B Renegar, Johannes A Soons, Balasubramanian Muralikrishnan, John S Villarrubia, Xiaoyu A Zheng, Theodore Vincent Vorburger
Abstract: For the calibration of rectangular and trapezoidal profile roughness specimens, stylus tip will increase profile peak width and decrease valley width, which may cause the Ra changes (either increase or decrease, depends on the profile shape). Someti ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911850

5. Modeling Scanning Electron Microscope Measurements with Charging
Published: 4/3/2013
Author: John S Villarrubia
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912857

6. Can We Get 3D CD Metrology Right?
Published: 4/19/2012
Authors: Andras Vladar, John S Villarrubia, Michael T Postek, Petr Cizmar
Abstract: Our world is three-dimensional, so are the integrated circuits (ICs), they have always been. In the past, for a long time, we‰ve been very fortunate, because it was enough to measure the critical dimension (CD), the width of the resist line to keep I ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911117

7. SEM imaging of ultra-high aspect ratio hole features
Published: 3/29/2012
Authors: John S Villarrubia, Aron Cepler, Benjamin D. Bunday, Bradley Thiel
Abstract: In-line, non-destructive process control metrology of high aspect ratio (HAR) holes and trenches has long been a known gap in metrology. Imaging the bottoms of at-node size beyond 10:1 AR contact holes in oxide has not yet been demonstrated. Neverth ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910884

8. Stylus Tip-Size Effect on the Calibration of Periodic Roughness Specimens with Rectangular Profiles
Published: 3/21/2012
Authors: Thomas B Renegar, Johannes A Soons, Balasubramanian Muralikrishnan, John S Villarrubia, Xiaoyu A Zheng, Theodore Vincent Vorburger, Jun-Feng Song
Abstract: Stylus instruments are widely used for surface characterization. It is well known that the size and shape of the stylus tip affects the measured surface geometry and parameters. In most cases, increasing the tip size decreases the measured Ra value b ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911079

9. VCI Simulation with Semiconductor Device Models: Test Report
Published: 2/29/2012
Author: John S Villarrubia
Abstract: JMONSEL, an electron beam imaging simulator, has been modified to permit conducting regions of a sample to be designated as unconnected to an external source or sink of charge (floating) or, alternatively, to be connected with a user-specified relaxa ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910799

10. NIST Simulation of E-beam Inspection and CD-SEM in-line metrology: Final Report
Published: 1/1/2011
Author: John S Villarrubia
Abstract: This report summarizes results from a two-year project to develop a simulator for electron beam inspection and critical dimension scanning electron microscope (SEM) inline metrology tools. The development attempts to improve on prior simulators and d ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907582



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