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Author: john villarrubia

Displaying records 31 to 40 of 85 records.
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31. Tip Characterization for Dimensional Nanometrology
Published: 1/1/2004
Author: John S Villarrubia
Abstract: Abstract: Technological trends are increasingly requiring dimensional metrology at size scales below a micrometer. Scanning probe microscopy has unique advantages in this size regime, but width and roughness measurements must be corrected for imagin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822539

32. Exploring and Extending the Limits of CD-SEMs' Resolution
Published: 11/1/2003
Authors: Andras Vladar, Michael T Postek, John S Villarrubia
Abstract: This study of SEM resolution is occasioned by concerns that it is no longer adequate for lithography process control in integrated circuit manufacturing. For example, according to the most recent International Technology Roadmap for Semiconductors, t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822030

33. CD-SEM Measurement of Line Edge Roughness Test Patterns for 193 nm Lithography
Published: 7/1/2003
Authors: B Bunday, M R Bishop, John S Villarrubia, Andras Vladar
Abstract: The measurement of line-edge roughness (LER) has recently become a major topic of concern in the litho-metrology community and the semiconductor industry as a whole, as addressed in the 2001 International Technology Roadmap for Semiconductors (ITRS) ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821972

34. CD-SEM Measurement of Line-Edge Roughness Test Patterns for 193-nm Lithography
Published: 7/1/2003
Authors: B Bunday, M R Bishop, John S Villarrubia, Andras Vladar
Abstract: The measurement of line-edge roughness (LER) has recently become a major topic of concern in the litho-metrology community and the semiconductor industry as a whole, as addressed in the 2001 International Technology Roadmap for Semiconductors (ITRS) ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823156

35. A New Way of Handling Dimensional Meaurement Results for Integrated Circuit Technology
Published: 6/1/2003
Authors: Andras Vladar, John S Villarrubia, Michael T Postek
Abstract: The international guidelines for correct expression of measurement results and errors call for a through assessment of the errors, their origin and behavior. The various dimensional measurement methods have different types of errors, different signa ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823159

36. A Simulation Study of Repeatability and Bias in the CD-SEM
Published: 5/1/2003
Authors: John S Villarrubia, Andras Vladar, Michael T Postek
Abstract: The ability of a critical dimension scanning electron microscope (CD-SEM) to resolve differences in the widths of two lines is determined by measurement repeatability and any sample-dependent biases. In order to ascertain the dependence of these quan ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822375

37. New Way of Handling Dimensional Measurement Results for Integrated Circuit Technology
Published: 5/1/2003
Authors: Michael T Postek, John S Villarrubia, Andras Vladar
Abstract: The international guidelines for correct expression of measurement results and errors call for a through assessment of the errors, their origin and behavior. The various dimensional measurement methods have different types of errors, different signal ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822146

38. Exploring and Extending the Limits of CD-SEMs' Resolution
Published: 3/1/2003
Authors: Andras Vladar, Michael T Postek, John S Villarrubia
Abstract: This study of SEM resolution is occasioned by concerns that it is no longer adequate for lithography process control in integrated circuit manufacturing. For example, according to the most recent International Technology Roadmap for Semiconductors, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823158

39. Scanning Electron Microscope Analog of Scatterometry
Published: 7/1/2002
Authors: John S Villarrubia, Andras Vladar, J R. Lowney, Michael T Postek
Abstract: Optical scatterometry has attracted a great deal of interest for linewidth measurement due to its high repeatability and capability of measuring sidewall shape. We have developed an analogous and complementary technique for the scanning electron micr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821756

40. Trial Shape-Sensitive Linewidth Measurement System
Published: 11/1/2001
Authors: John S Villarrubia, Andras Vladar, Michael T Postek
Abstract: This is a report for a project to develop a scanning electron microscope (SEM) based shape-sensitive linewidth measurement system by improving the method by improving the method by which SEM data are analyzed. We report significant developments in al ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822433



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