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Author: john villarrubia

Displaying records 31 to 40 of 89 records.
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31. Determination of Optimal Parameters for CD-SEM Measurement of Line Edge Roughness
Published: 5/1/2004
Authors: B Bunday, M R Bishop, D Mccormack, John S Villarrubia, Andras Vladar, Theodore Vincent Vorburger, Ndubuisi George Orji, J Allgair
Abstract: The measurement of line-edge roughness (LER) has recently become a topic of concern in the litho-metrology community and the semiconductor industry as a whole. The Advanced Metrology Advisory Group (AMAG), a council composed of the chief metrologists ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822538

32. Dimensional Metrology of Resist Lines Using a SEM Model-Based Library Approach
Published: 5/1/2004
Authors: John S Villarrubia, Andras Vladar, B Bunday, M R Bishop
Abstract: The widths of 284 lines in a 193 nm resist were measured by two methods and the results compared. One method was scanning electron microscopy (SEM) of cross-sections. The other was a model-based library (MBL) approach in which top-down CD-SEM line sc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822158

33. Development of Photomask Artifacts and Metrology for the 65 nm Device Generation with Extensibility Beyond
Published: 1/1/2004
Authors: Andras Vladar, Richard M Silver, James Edward Potzick, John S Villarrubia
Abstract: The purpose of this project was to explore the currently used mask metrology methods and tools, to further develop mask metrology, and to design, fabricate and measure a new, relevant, 193 nm phase shifting mask metrology mask. These tasks were succe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822365

34. Shape-Sensitive Linewidth Measurements of Resist Structures
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7089
Published: 1/1/2004
Authors: John S Villarrubia, Andras Vladar, Michael T Postek
Abstract: Widths of developed 193 nm resist lines were measured by two methods and compared. One method was a new model-based library method. In this method the scanning electron microscope (SEM) images corresponding to various edge shapes are simulated in adv ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822161

35. Tip Characterization for Dimensional Nanometrology
Published: 1/1/2004
Author: John S Villarrubia
Abstract: Abstract: Technological trends are increasingly requiring dimensional metrology at size scales below a micrometer. Scanning probe microscopy has unique advantages in this size regime, but width and roughness measurements must be corrected for imagin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822539

36. Exploring and Extending the Limits of CD-SEMs' Resolution
Published: 11/1/2003
Authors: Andras Vladar, Michael T Postek, John S Villarrubia
Abstract: This study of SEM resolution is occasioned by concerns that it is no longer adequate for lithography process control in integrated circuit manufacturing. For example, according to the most recent International Technology Roadmap for Semiconductors, t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822030

37. CD-SEM Measurement of Line Edge Roughness Test Patterns for 193 nm Lithography
Published: 7/1/2003
Authors: B Bunday, M R Bishop, John S Villarrubia, Andras Vladar
Abstract: The measurement of line-edge roughness (LER) has recently become a major topic of concern in the litho-metrology community and the semiconductor industry as a whole, as addressed in the 2001 International Technology Roadmap for Semiconductors (ITRS) ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821972

38. CD-SEM Measurement of Line-Edge Roughness Test Patterns for 193-nm Lithography
Published: 7/1/2003
Authors: B Bunday, M R Bishop, John S Villarrubia, Andras Vladar
Abstract: The measurement of line-edge roughness (LER) has recently become a major topic of concern in the litho-metrology community and the semiconductor industry as a whole, as addressed in the 2001 International Technology Roadmap for Semiconductors (ITRS) ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823156

39. A New Way of Handling Dimensional Meaurement Results for Integrated Circuit Technology
Published: 6/1/2003
Authors: Andras Vladar, John S Villarrubia, Michael T Postek
Abstract: The international guidelines for correct expression of measurement results and errors call for a through assessment of the errors, their origin and behavior. The various dimensional measurement methods have different types of errors, different signa ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823159

40. A Simulation Study of Repeatability and Bias in the CD-SEM
Published: 5/1/2003
Authors: John S Villarrubia, Andras Vladar, Michael T Postek
Abstract: The ability of a critical dimension scanning electron microscope (CD-SEM) to resolve differences in the widths of two lines is determined by measurement repeatability and any sample-dependent biases. In order to ascertain the dependence of these quan ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822375



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