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You searched on: Author: mark vaudin

Displaying records 71 to 80 of 85 records.
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71. Accurate Texture Measurements on Thin Films Using a Powder X-Ray Diffractometer
Published: 6/1/1999
Author: Mark D Vaudin
Abstract: A fast and accurate method that uses a conventional powder x-ray diffractometer has been developed for measuring crystalline texture. A {Theta} - 2{Theta}scan of a Bragg peak from the textured planes is collected and also a {Theta} scan, or rocking c ...

72. Effect of Electrode Layer on the Polydomain Structure of Epitaxial PbZr^d0.2^Ti^d0.8^O^d3^ Thin Films
Published: 3/15/1999
Authors: S P Alpay, V Nagarajan, Leonid A Bendersky, Mark D Vaudin, S Aggarwal, R Ramesh, Alexander Lazar Roytburd
Abstract: PbZr^d0.2^Ti^d0.8^O^d3^(PZT) thin films with and without La^d0.5^Sr^d0.5^CoO^d3^(LSCO) electrodes were grown epitaxially on (001) SrTiO^d3^ (STO) at 650 C by pulsed laser deposition. The domain structure of the 400 nm thick PZT films with different ...

73. Effect of Film Composition on the Orientation of (Ba,Sr)TiO^d3^ Grains in (Ba,Sr)^dy^TiO^d2+y^ Thin Films
Published: 1/12/1999
Authors: Debra L Kaiser, Mark D Vaudin, L D. Rotter, John E Bonevich, J T. Armstrong
Abstract: (Ba,Sr)^dy^TiO^d2+y^ thin films with 0.34 {< or =} y {< or =} 1.64 were deposited by metalorganic chemical vapor deposition (MOCVD) on (100) MgO substrates at various growth conditions. X-ray diffraction and transmission electron microscopy studies ...

74. Diameter Dependent Transport Properties of GaN Nanowire Field Effect Transistors
Published: Date unknown
Authors: Abhishek Motayed, Mark D Vaudin, Albert Davydov, John Meingailis, Maoqi He, S N Mohammad
Abstract: We report transport properties measurements of individual GaN nanowire field effect transistors and the correlation of the electron mobilities with the existence of grain boundaries in these nanowires. These nanowires are grown by direct reaction of ...

75. Electrodeposited Epitaxial Fe Subscript {100-x}Co Subscript {x} Films on GaAs
Published: Date unknown
Authors: J Mallett, Erik B. Svedberg, Mark D Vaudin, Leonid A Bendersky, William F. Egelhoff Jr., Thomas P Moffat
Abstract: The electrodeposition of epitaxial cube-on-cube Fe _(subscript) {100-x}Co_(subscript) {x} films onto n-GaAs is described from ferrous ammonium sulfate solutions containing various concentrations of cobalt sulfate. The cobalt composition in a series ...

76. Electron Backscatter Diffraction Investigation of a Nano-Crystalline Pt Thin Film
Published: Date unknown
Authors: T Maitland, X Han, Mark D Vaudin, G R Fox, M Coy
Abstract: A polycrystalline Pt thin film deposited on a <100> cut Si single crystal wafer coated with SiO2 and a TiO2 adhesion layer was studied using automated electron backscatter diffraction (EBSD). Integration of the EBSD detector and a scanning electron ...

77. Fabrication of GaN-Based Nanoscale Device Structures Utilizing Focused Ion Beam Induced Pt Deposition
Published: Date unknown
Authors: Abhishek Motayed, Albert Davydov, Mark D Vaudin, Igor Levin, John Melngailis, S N Mohammad
Abstract: In this work we have demonstrated nanoscale GaN device structures made from individual GaN nanowires and electrical contacts utilizing Focused Ion Beam (FIB) induced Pt deposition. These GaN nanowires were grown by direct reaction of Ga vapor with N ...

78. High-Temperature X-Ray Diffraction Study of Phase Evolution in Ba^d2^YCu^d3^O^d6+x^ Films Using the BaF^d2^ Conversion Process
Published: Date unknown
Authors: Winnie K Wong-Ng, Igor Levin, Mark D Vaudin, Ron Feenstra, Lawrence P. Cook, James P Cline
Abstract: In-situ high-temperature x-ray diffraction (HTXRD) was used to study the phase formation and reaction kinetics of the Ba^d2^Ycu^d3^O^d6+x^ (Y-213) phase using the ex-situ BaF^d2^ conversion process. Three sets of films on single crystal SrTiO^d3^ su ...

79. Micro-Texture of a BaTiO^d3^ Thin Film Fabricated by Pulsed Laser Deposition on a Pt/Ti/SiO^d2^/Si Substrate
Published: Date unknown
Authors: Y E Lee, Mark D Vaudin, Peter K. Schenck, B Hockey
Abstract: A BaTiO^d3^ polycrystalline thin film was fabricated by pulsed laser deposition on a Pt/Ti/SiO^d2^/Si substrate. X-ray diffraction suggested that the film contained mixed orientations of (100), (111), and (110). The microstructure and interface bet ...

80. Optical and Structural Studies of Strain-Relaxed InxGa1-xN Films on GaN/sapphire with 0.04
Published: Date unknown
Authors: Lawrence H Robins, J T. Armstrong, Mark D Vaudin, Charles E. Bouldin, Joseph C Woicik, Albert J. Paul, W. Robert Thurber, Ryna Beth Marinenko
Abstract: The structures of a set of InxGa1-xN films grown by atmospheric-pressure MOCVD onGaN buffer layers on c-plane sapphire, with compositions in the range 0.04 < x < 0.47, were characterized by x-ray diffraction (XRD). Several films were also examined by

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