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You searched on: Author: mark vaudin

Displaying records 71 to 80 of 83 records.
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71. Effect of Film Composition on the Orientation of (Ba,Sr)TiO^d3^ Grains in (Ba,Sr)^dy^TiO^d2+y^ Thin Films
Published: 1/12/1999
Authors: Debra L Kaiser, Mark D Vaudin, L D. Rotter, John E Bonevich, J T. Armstrong
Abstract: (Ba,Sr)^dy^TiO^d2+y^ thin films with 0.34 {< or =} y {< or =} 1.64 were deposited by metalorganic chemical vapor deposition (MOCVD) on (100) MgO substrates at various growth conditions. X-ray diffraction and transmission electron microscopy studies ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850213

72. Diameter Dependent Transport Properties of GaN Nanowire Field Effect Transistors
Published: Date unknown
Authors: Abhishek Motayed, Mark D Vaudin, Albert Davydov, John Meingailis, Maoqi He, S N Mohammad
Abstract: We report transport properties measurements of individual GaN nanowire field effect transistors and the correlation of the electron mobilities with the existence of grain boundaries in these nanowires. These nanowires are grown by direct reaction of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853466

73. Electrodeposited Epitaxial Fe Subscript {100-x}Co Subscript {x} Films on GaAs
Published: Date unknown
Authors: J Mallett, Erik B. Svedberg, Mark D Vaudin, Leonid A Bendersky, William F. Egelhoff Jr., Thomas P Moffat
Abstract: The electrodeposition of epitaxial cube-on-cube Fe _(subscript) {100-x}Co_(subscript) {x} films onto n-GaAs is described from ferrous ammonium sulfate solutions containing various concentrations of cobalt sulfate. The cobalt composition in a series ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853473

74. Electron Backscatter Diffraction Investigation of a Nano-Crystalline Pt Thin Film
Published: Date unknown
Authors: T Maitland, X Han, Mark D Vaudin, G R Fox, M Coy
Abstract: A polycrystalline Pt thin film deposited on a <100> cut Si single crystal wafer coated with SiO2 and a TiO2 adhesion layer was studied using automated electron backscatter diffraction (EBSD). Integration of the EBSD detector and a scanning electron ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850777

75. Fabrication of GaN-Based Nanoscale Device Structures Utilizing Focused Ion Beam Induced Pt Deposition
Published: Date unknown
Authors: Abhishek Motayed, Albert Davydov, Mark D Vaudin, Igor Levin, John Melngailis, S N Mohammad
Abstract: In this work we have demonstrated nanoscale GaN device structures made from individual GaN nanowires and electrical contacts utilizing Focused Ion Beam (FIB) induced Pt deposition. These GaN nanowires were grown by direct reaction of Ga vapor with N ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853422

76. High-Temperature X-Ray Diffraction Study of Phase Evolution in Ba^d2^YCu^d3^O^d6+x^ Films Using the BaF^d2^ Conversion Process
Published: Date unknown
Authors: Winnie K Wong-Ng, Igor Levin, Mark D Vaudin, Ron Feenstra, Lawrence P. Cook, James P Cline
Abstract: In-situ high-temperature x-ray diffraction (HTXRD) was used to study the phase formation and reaction kinetics of the Ba^d2^Ycu^d3^O^d6+x^ (Y-213) phase using the ex-situ BaF^d2^ conversion process. Three sets of films on single crystal SrTiO^d3^ su ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850676

77. Micro-Texture of a BaTiO^d3^ Thin Film Fabricated by Pulsed Laser Deposition on a Pt/Ti/SiO^d2^/Si Substrate
Published: Date unknown
Authors: Y E Lee, Mark D Vaudin, Peter K. Schenck, B Hockey
Abstract: A BaTiO^d3^ polycrystalline thin film was fabricated by pulsed laser deposition on a Pt/Ti/SiO^d2^/Si substrate. X-ray diffraction suggested that the film contained mixed orientations of (100), (111), and (110). The microstructure and interface bet ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850271

78. Optical and Structural Studies of Strain-Relaxed InxGa1-xN Films on GaN/sapphire with 0.04
Published: Date unknown
Authors: Lawrence H Robins, J T. Armstrong, Mark D Vaudin, Charles E. Bouldin, Joseph C Woicik, Albert J. Paul, W. Robert Thurber, Ryna B. Marinenko
Abstract: The structures of a set of InxGa1-xN films grown by atmospheric-pressure MOCVD onGaN buffer layers on c-plane sapphire, with compositions in the range 0.04 < x < 0.47, were characterized by x-ray diffraction (XRD). Several films were also examined by
...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850413

79. Phase Relations in Ba-(Nd,Eu,Gd)-Cu-O Coated Conductor Films
Published: Date unknown
Authors: Winnie K Wong-Ng, Igor Levin, Joseph J. Ritter, Lawrence P. Cook, Guangyao Liu, Makoto Otani, Christopher E Lucas, Shailee P Diwanji, Ron Feenstra, P Goyal, Mark D Vaudin
Abstract: Knowledge of phase relations in thin films of Ba2RCu3O6+x (where R=lanthanides or mixed lanthanides) is needed to guide the processing of coated conductors. High-temperature X-ray diffraction studies of Ba2RCu3O6+x films deposited using the trifluor ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=851064

80. Rapid Detection of Thin-Film Interfacial Reactions by MEMS-DSC
Published: Date unknown
Authors: Lawrence P. Cook, Richard E Cavicchi, Yanbao Zhang, Mark D Vaudin, Christopher B Montgomery, William F. Egelhoff Jr., Martin L Green, Leslie Allen
Abstract: A MEMS-based differential scanning calorimeter (DSC) has been used to characterize the Ni/Si interfacial reaction in thin films at ramp rates of 940 C/s and 3760 C/s. The DSC devices were fabricated using CMOS semiconductor processing technology, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=851005



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