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Author: mark vaudin

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71. Electron Backscatter Diffraction Investigation of a Nano-Crystalline Pt Thin Film
Published: Date unknown
Authors: T Maitland, X Han, Mark D Vaudin, G R Fox, M Coy
Abstract: A polycrystalline Pt thin film deposited on a <100> cut Si single crystal wafer coated with SiO2 and a TiO2 adhesion layer was studied using automated electron backscatter diffraction (EBSD). Integration of the EBSD detector and a scanning electron ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850777

72. Fabrication of GaN-Based Nanoscale Device Structures Utilizing Focused Ion Beam Induced Pt Deposition
Published: Date unknown
Authors: Abhishek Motayed, Albert Davydov, Mark D Vaudin, Igor Levin, John Melngailis, S N Mohammad
Abstract: In this work we have demonstrated nanoscale GaN device structures made from individual GaN nanowires and electrical contacts utilizing Focused Ion Beam (FIB) induced Pt deposition. These GaN nanowires were grown by direct reaction of Ga vapor with N ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853422

73. High-Temperature X-Ray Diffraction Study of Phase Evolution in Ba^d2^YCu^d3^O^d6+x^ Films Using the BaF^d2^ Conversion Process
Published: Date unknown
Authors: Winnie K Wong-Ng, Igor Levin, Mark D Vaudin, Ron Feenstra, Lawrence P. Cook, James P Cline
Abstract: In-situ high-temperature x-ray diffraction (HTXRD) was used to study the phase formation and reaction kinetics of the Ba^d2^Ycu^d3^O^d6+x^ (Y-213) phase using the ex-situ BaF^d2^ conversion process. Three sets of films on single crystal SrTiO^d3^ su ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850676

74. Micro-Texture of a BaTiO^d3^ Thin Film Fabricated by Pulsed Laser Deposition on a Pt/Ti/SiO^d2^/Si Substrate
Published: Date unknown
Authors: Y E Lee, Mark D Vaudin, Peter K. Schenck, B Hockey
Abstract: A BaTiO^d3^ polycrystalline thin film was fabricated by pulsed laser deposition on a Pt/Ti/SiO^d2^/Si substrate. X-ray diffraction suggested that the film contained mixed orientations of (100), (111), and (110). The microstructure and interface bet ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850271

75. Optical and Structural Studies of Strain-Relaxed InxGa1-xN Films on GaN/sapphire with 0.04
Published: Date unknown
Authors: Lawrence H Robins, J T. Armstrong, Mark D Vaudin, Charles E. Bouldin, Joseph C Woicik, Albert J. Paul, W. Robert Thurber, Ryna B. Marinenko
Abstract: The structures of a set of InxGa1-xN films grown by atmospheric-pressure MOCVD onGaN buffer layers on c-plane sapphire, with compositions in the range 0.04 < x < 0.47, were characterized by x-ray diffraction (XRD). Several films were also examined by ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850413

76. Phase Relations in Ba-(Nd,Eu,Gd)-Cu-O Coated Conductor Films
Published: Date unknown
Authors: Winnie K Wong-Ng, Igor Levin, Joseph J. Ritter, Lawrence P. Cook, Guangyao Liu, Makoto Otani, Christopher E Lucas, Shailee P Diwanji, Ron Feenstra, P Goyal, Mark D Vaudin
Abstract: Knowledge of phase relations in thin films of Ba2RCu3O6+x (where R=lanthanides or mixed lanthanides) is needed to guide the processing of coated conductors. High-temperature X-ray diffraction studies of Ba2RCu3O6+x films deposited using the trifluor ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=851064

77. Rapid Detection of Thin-Film Interfacial Reactions by MEMS-DSC
Published: Date unknown
Authors: Lawrence P. Cook, Richard E Cavicchi, Yanbao Zhang, Mark D Vaudin, Christopher B Montgomery, William F. Egelhoff Jr., Martin L Green, Leslie Allen
Abstract: A MEMS-based differential scanning calorimeter (DSC) has been used to characterize the Ni/Si interfacial reaction in thin films at ramp rates of 940 C/s and 3760 C/s. The DSC devices were fabricated using CMOS semiconductor processing technology, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=851005

78. Stoichiometry and Phase Composition of MOCVD Barium Titanate Films
Published: Date unknown
Authors: Charles E. Bouldin, Joseph C Woicik, Bruce D Ravel, Debra L Kaiser, Mark D Vaudin
Abstract: X-ray absorption fine structure (XAFS), x-ray diffraction (XRD) and x-ray fluorescence (XRF) have been used to study the stoichiometry and phase composition of thin ({approximately equal to} 1 micron) films deposited on MgO substrates. Deposition tem ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850530

79. The Influence of Additives on the Room-Temperature Recrystallization of Electrodeposited Copper
Published: Date unknown
Authors: Gery R Stafford, Mark D Vaudin, Thomas P Moffat, N G Armstrong, David R Kelley
Abstract: The recrystallization behavior of copper, electrodeposited from a copper sulfate-sulfuric acid plating bath into which various combinations of NaCl, sodium 3-mercapto-1propanesulfonate (MPSA), the polyethylene glycol (PEG) has been added, was examine ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852954

80. X-Ray Diffraction Study of the Optimization of MgO Growth Conditions for Magnetic Tunnel Junctions
Published: Date unknown
Authors: O Se Young, C G Lee, Alexander J. Shapiro, William F. Egelhoff Jr., Mark D Vaudin, Jennifer L Klamo, J Mallett, Philip Pong
Abstract: MgO based magnetic tunnel junctions (MTJs) show large tunneling magnetoresistance (TMR) effects and are currently the most promising technology for the applications in magnetoelectronics devices. Conventional MTJs with amorphous AlOx barriers yield T ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853524