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Author: john suehle
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1. A Monolithic CMOS Microhotplate-based Gas Sensor System
Published: 12/1/2002
Authors: Muhammad Yaqub Afridi, John S Suehle, Mona Elwakkad Zaghloul, David W. Berning, Allen R Hefner Jr, Richard E Cavicchi, Stephen Semancik, C B. Montgomery, C J. Taylor
Abstract: A monolithic CMOS microhotplate-based conductance type gas sensor system is described. A bulk micromachining technique is used to create suspended microhotplate structures. The thermal properties of the microhotplates include a one-millisecond therma ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30895

2. A Monolithic Implementation of Interface Circuitry for CMOS Compatible Gas-Senor System
Published: 6/1/2002
Authors: Muhammad Yaqub Afridi, John S Suehle, Mona Elwakkad Zaghloul, David W. Berning, Allen R Hefner Jr, Stephen Semancik, Richard E Cavicchi
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903500

3. A Monolithic Implementation of Interface Circuitry for CMOS Compatible Gas-Sensor System
Published: 7/1/2002
Authors: Muhammad Yaqub Afridi, John S Suehle, Mona Elwakkad Zaghloul, David W. Berning, Allen R Hefner Jr, Stephen Semancik, Richard E Cavicchi
Abstract: A monolithic CMOS micro-gas-sensor system, designed and fabricated in a standard CMOS process, is described. The gas-sensor system incorporates an array of four microhotplate-based gas-sensing structures. The system utilizes a thin film of tin-oxide ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=24558

4. A New Interface Defect Spectroscopy Method
Published: 4/12/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, C Wang, Jason P Campbell, John S Suehle, Vinayak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907880

5. A New Interface Defect Spectroscopy Method
Published: 4/11/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Viniyak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907968

6. A New Oxide Degradation Mechanism for Stresses in the Fowler-Nordheim Tunneling Regime
Published: 12/31/1996
Authors: A. Martin, John S Suehle, P Chaparala, P. O'Sullivan, A. Mathewson
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=22488

7. A New Physics-Based Model for Time-Dependent-Dielectric-Breakdown
Published: 12/31/1995
Authors: B. Schlund, John S Suehle, C. Messick, P Chaparala
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8356

8. A New Technique for Determining Long-Term TDDB Acceleration Parameters of Thin Gate Oxides
Published: 7/1/1998
Authors: Y Chen, John S Suehle, C C Shen, J B Bernstein, C. Messick, P Chaparala
Abstract: A new technique, the dual voltage versus time curve (V-t) integration technique, is presented as a much faster method to obtain time-dependent dielectric breakdown (TDDB) acceleration parameters ([alpha] and [tau]) of ultra-thin gate oxides compared ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=13363

9. A New Technique to Extract TDDB Acceleration Parameters From Fast Q^dbd^ Tests
Published: 12/31/1998
Authors: Y Chen, John S Suehle, B. Shen, J B Bernstein, C. Messick, P Chaparala
Abstract: A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant current injection breakdown tests. This is the first time that an accurate c ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=12223

10. A Novel Gas Sensor for Binder Burnout
Published: 12/31/1996
Authors: R Raman, John S Suehle, Richard E Cavicchi
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=15141