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You searched on: Author: john suehle

Displaying records 21 to 30 of 180 records.
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21. Band Alignment of Metal-Oxide-Semiconductor Structure by Internal Photoemission Spectroscopy and Spectroscopic Ellipsometry
Published: 12/10/2010
Authors: Nhan V Nguyen, Oleg A Kirillov, John S Suehle
Abstract: In this paper, we will provide an overview of the internal photoemission (IPE) and the significance of this technique when combined with spectroscopic ellipsometry (SE) to investigate the interfacial electronic properties of heterostructures. In ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907189

22. The Role of High-Field Stress in the Negative Bias Temperature Instability
Published: 12/1/2010
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: In this study, a fast drain current measurement methodology which supports the standard threshold voltage and transconductance extractions associated with the fast dynamic negative-bias temperature instability (NBTI) is presented. Using this methodol ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902186

23. New Methods for the Direct Extraction of Mobility and Series Resistance from a Single Ultra-Scaled Device
Published: 6/15/2010
Authors: Jason P Campbell, Kin P Cheung, Liangchun Yu, John S Suehle, Kuang Sheng, A Oates
Abstract: The engineering of channel mobility (μ) and series resistance (RSD) in advanced CMOS technologies are both extremely challenging and of paramount importance. Together, they determine the key metric of performance ON current. The reported scali ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907097

24. New Methods for the Direct Extraction of Mobility and Series Resistance from a Single Ultra-Scaled Device
Published: 6/1/2010
Authors: Jason P Campbell, Kin P Cheung, Liangchun Yu, John S Suehle, Kuang Sheng, A Oates
Abstract: A reliable extraction methodology for both quantities directly from a single ultra-scaled device is extremely important and urgently needed. In this work, we demonstrate (1) a wafer level geometric magnetoresistance methodology for mobility extractio ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905953

25. Band Alignment of Metal-Oxide-Semiconductor Structure by Internal Photoemission Spectroscopy and Spectroscopic Ellipsometry
Published: 5/28/2010
Authors: Nhan V Nguyen, Oleg A Kirillov, John S Suehle
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907105

26. Frequency-Dependent Charge-Pumping: The Depth Question Revisited
Published: 5/1/2010
Authors: Fan Zhang, Kin P Cheung, Jason P Campbell, John S Suehle
Abstract: A popular defect depth-profiling technique, frequency-dependent charge-pumping is carefully re-examined. Without complicated math of modeling, the physics behind the technique is examined clearly. It is shown that there is no unique relationship betw ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904997

27. Band Offsets of Al^d2^O^d3^ / In^d1-x^Ga^dx^As (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing
Published: 2/2/2010
Authors: Nhan V Nguyen, Min Xu, Oleg A Kirillov, Pei D Ye, C Wang, Kin P Cheung, John S Suehle
Abstract: Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903535

28. Silicon Nanowire Nonvolatile-Memory with Varying HfO2 Charge Trapping Layer Thickness
Published: 12/9/2009
Authors: Xiaoxiao Zhu, Qiliang Li, D. E Ioannou, H Gu, Helmut Baumgart, John E Bonevich, John S Suehle, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907138

29. Demonstration of a Wafer-level Hall-Mobility Measurement Technique
Published: 12/3/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905433

30. An Improved Fast I^d d ^-V ^d g Measurement Technology With Expanded Application Range
Published: 10/19/2009
Authors: Chen Wang, Liangchun Yu, Jason P Campbell, Kin P Cheung, Yi Xuan, Peide Ye, John S Suehle, David Zhang
Abstract: Fast Id-Vg measurements on very high performance devices (very low channel ON-resistance) and larger area devices (therefore large gate capacitance) are subject to serious distortions. Methods to minimize these distortions are introduced in this pape ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904155



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