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Author: john suehle

Displaying records 171 to 179.
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171. The Measurement, Use, and Interpretation of the Temperature Coefficient of Resistance of Metallizations
Published: 12/31/1992
Authors: Harry A. Schafft, John S Suehle
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=21307

172. Techniques and Characterization of Pulsed Electromigration at the Wafer Level
Published: 11/1/1992
Authors: John S Suehle, Harry A. Schafft
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=5169

173. The Effects of Localized Hot-Carrier-Induced Charge in VLSI Switching Circuits
Published: 6/1/1990
Authors: John S Suehle, Kathleen Gallo
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=220

174. Current Density Dependence of Electromigration t^d50^ Enhancement Due to Pulsed Operation
Published: 3/1/1990
Authors: John S Suehle, Harry A. Schafft
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=10501

175. The Effects of Localized Hot-Carrier-Induced Charge in VLSI Switching Circuits
Published: 12/31/1989
Authors: John S Suehle, Kathleen Gallo
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=22693

176. The Electromigration Damage Response Time and Implications for dc and Pulsed Characterizations
Published: 12/31/1989
Authors: John S Suehle, Harry A. Schafft
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=29319

177. Thermal Conductivity Measurements of Thin-Film Silicon Dioxide
Published: 12/31/1989
Authors: Harry A. Schafft, John S Suehle, P. G. Mirel
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=19454

178. Test Circuit Structures for Characterizing the Effects of Localized Hot-Carrier-Induced Charge in VLSI Switching Circuits
Published: 12/31/1988
Authors: John S Suehle, Kathleen Gallo
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=17791

179. Direct Measurement of Intrinsic Dirac Point and Fermi level at Graphene/Oxide interface and Its Band Alignment by Cavity Enhanced Internal Photoemission
Published: 12/17/0012
Authors: Kun Xu, Caifu Zeng, Qin Q. Zhang, Rusen Yan, Peide Ye, Kang Wang, Alan C. Seabaugh, Huili G. Xing, John S Suehle, Curt A Richter, David J Gundlach, Nhan V Nguyen
Abstract: We report the first direct measurement of the Dirac point, the Fermi level, and the work function of graphene by performing internal photoemission measurements on a graphene/SiO2/Si structure with a unique optical-cavity enhanced test structure. ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912242



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