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Author: john suehle

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171. The Effects of Localized Hot-Carrier-Induced Charge in VLSI Switching Circuits
Published: 12/31/1989
Authors: John S Suehle, Kathleen Gallo
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=22693

172. The Electromigration Damage Response Time and Implications for dc and Pulsed Characterizations
Published: 12/31/1989
Authors: John S Suehle, Harry A. Schafft
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=29319

173. Thermal Conductivity Measurements of Thin-Film Silicon Dioxide
Published: 12/31/1989
Authors: Harry A. Schafft, John S Suehle, P. G. Mirel
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=19454

174. Test Circuit Structures for Characterizing the Effects of Localized Hot-Carrier-Induced Charge in VLSI Switching Circuits
Published: 12/31/1988
Authors: John S Suehle, Kathleen Gallo
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=17791

175. Direct Measurement of Intrinsic Dirac Point and Fermi level at Graphene/Oxide interface and Its Band Alignment by Cavity Enhanced Internal Photoemission
Published: 12/17/0012
Authors: Kun Xu, Caifu Zeng, Qin Zhang, Rusen Yan, Peide Ye, Kang Wang, Alan C. Seabaugh, Huili G. Xing, John S Suehle, Curt A Richter, David J Gundlach, Nhan V Nguyen
Abstract: We report the first direct measurement of the Dirac point, the Fermi level, and the work function of graphene by performing internal photoemission measurements on a graphene/SiO2/Si structure with a unique optical-cavity enhanced test structure. ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912242