NIST logo

Publications Portal

You searched on:
Author: stephan stranick
Sorted by: date

Displaying records 1 to 10 of 36 records.
Resort by: Date / Title


1. Stress mapping of micromachined polycrystalline silicon devices via confocal Raman microscopy
Published: 6/15/2014
Authors: Grant A Myers, Siddharth Hazra, Maarten de Boer, Chris A Michaels, Stephan J Stranick, Ryan P. Koseski, Robert Francis Cook, Frank W DelRio
Abstract: Stress mapping of micromachined polycrystalline silicon devices with components in various levels of uniaxial tension was performed. Confocal Raman microscopy was used to form two-dimensional maps of Raman spectral shifts, which exhibited variations ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915909

2. Accuracy and Resolution of Nanoscale Strain Measurement Techniques
Published: 3/26/2013
Authors: William A Osborn, Lawrence H Friedman, Mark D Vaudin, Stephan J Stranick, Michael S. Gaither, Justin M Gorham, Victor Vartanian, Robert Francis Cook
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913178

3. Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via
Published: 10/11/2011
Authors: Ryan P. Koseski, William A Osborn, Stephan J Stranick, Frank W DelRio, Mark D Vaudin, Thuy Dao, Vance H. Adams, Robert Francis Cook
Abstract: The stress in silicon surrounding a tungsten-filled through-silicon via (TSV) is measured using confocal Raman microscopy line scans across the TSV both before and after etch removal of an oxide stack used as a mask to define the TSV during fabricati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908908

4. Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy
Published: 5/31/2011
Authors: Yvonne Beatrice Gerbig, Stephan J Stranick, Robert Francis Cook
Abstract: The theoretically-predicted anisotropic nature of the indentation phase transformation in silicon (Si) is observed directly in experiments using hyperspectral, confocal Raman microscopy. The anisotropy is reflected in the two-dimensional distribution ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906105

5. Live, video-rate super-resolution microscopy using structured illumination and rapid GPU-based parallel processing
Published: 3/9/2011
Authors: Jonathan A. Lefman, Keana C K Scott, Javed Khan, Stephan J Stranick
Abstract: Structured illumination fluorescence microscopy is a powerful super resolution method that is capable of achieving a resolution below 100 nm. Each super-resolution image is computationally constructed from a set of differentially illuminated images. ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906212

6. Comparison of the Sensitivity and Image Contrast in Spontaneous Raman and Coherent Stokes Raman Scattering Microscopy of Geometry Controlled Samples
Published: 2/9/2011
Authors: Hyun Min Kim, Chris A Michaels, Garnett W Bryant, Stephan J Stranick
Abstract: We experimentally compare the performance and contrast differences between spontaneous and coherent Stokes Raman scattering microscopy. We demonstrate the differences on a series of geometry controlled samples that range in complexity from a point (a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906194

7. Measurement of residual stress field anisotropy at indentations in silicon
Published: 6/23/2010
Authors: Yvonne Beatrice Gerbig, Stephan J Stranick, Robert Francis Cook
Abstract: The residual stress field around spherical indentations on single crystal silicon (Si) of different crystallographic orientation is mapped by confocal Raman microscopy. All orientations exhibit an anisotropic stress pattern with an orientation spec ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905445

8. Stress-Intensity Factor and Toughness Measurement at the Nanoscale using Confocal Raman Microscopy
Published: 7/12/2009
Authors: Robert Francis Cook, Yvonne Beatrice Gerbig, Mark D Vaudin, Jeroen Schoenmaker, Stephan J Stranick
Abstract: A confocal Raman microscopy technique is presented that allows stress measurement at the nanoscale, which in turn enables measurement of stress-intensity factors (SIF) at crack tips and thus toughness to be estimated. Peak-fitting and super-resolutio ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900910

9. Effect of crystallographic orientation on phase transformations during indentation of silicon
Published: 3/9/2009
Authors: Yvonne Beatrice Gerbig, Dylan Morris, Stephan J Stranick, Mark D Vaudin, Robert Francis Cook
Abstract: In a statistical nanoindentation study using a spherical probe, the effect of crystallographic orientation on the phase transformation of silicon (Si) was investigated. The presence and pressure at which events associated with phase transformation oc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854143

10. Comparison of Nanoscale Measurements of Strain and Stress using Electron Back Scattered Diffraction and Confocal Raman Microscopy
Published: 12/12/2008
Authors: Mark D Vaudin, Yvonne Beatrice Gerbig, Stephan J Stranick, Robert Francis Cook
Abstract: Strains in Si as small as 104 (corresponding to stresses of 10 MPa) have been measured using electron back scatter diffraction (EBSD), with spatial resolution close to 10 nm, and confocal Raman microscopy (CRM) with spatial resolution app ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854129



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series