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1. Enabling Quantitative Optical Imaging for In-die-capable Critical Dimension Targets
Published: 4/4/2016
Authors: Bryan M Barnes, Mark Alexander Henn, Martin Y Sohn, Hui Zhou, Richard M Silver
Abstract: Dimensional scaling trends will eventually bring the semiconductor critical dimensions (CDs) down to only a few atoms in width. New optical techniques are required to address intra-die variability for these CDs using sufficiently small in-die metrolo ...

2. Quantitative tool characterization of a 193 nm scatterfield microscope
Published: 9/9/2015
Authors: Martin Y Sohn, Bryan M Barnes, Hui Zhou, Richard M Silver
Abstract: Optical microscope tool characterization has been investigated for the quantitative measurements of deep sub-wavelength features using a Fourier plane normalization method. The NIST 193 nm scatterfield microscope operating with an ArF Excimer laser, ...

3. Scatterfield Microscopy and the Fundamental Limits of Optical Defect Metrology
Published: 4/14/2015
Authors: Richard M Silver, Bryan M Barnes, Martin Y Sohn, Hui Zhou
Abstract: Defect inspection remains a critical manufacturing challenge due to the competing requirements between throughput and very high resolution. Currently only optical methods provide an acceptable solution, although there are a number of process layers ...

4. Effects of wafer noise on the detection of 20 nm defects using optical volumetric inspection
Published: 2/11/2015
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Andras Vladar, Richard M Silver
Abstract: Patterning imperfections in semiconductor device fabrication may either be noncritical [e.g., line edge roughness (LER)] or critical, such as defects that impact manufacturing yield. As the sizes of the pitches and linewidths decrease in lithography, ...

5. 193 nm scatterfield microscope illumination optics
Published: 12/17/2014
Authors: Martin Y Sohn, Richard M Silver
Abstract: A scatterfield microscope for deep sub-wavelength semiconductor metrology using 193 nm light has been designed. In addition to accommodating the fixed numerical aperture and size of its commercial catadioptric objective lens, the illumination optics ...

6. Optical volumetric inspection of sub-20 nm patterned defects with wafer noise
Published: 4/2/2014
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Richard M Silver, Andras Vladar, Abraham Arceo
Abstract: We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focus resolved 2-D ...

7. Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy
Published: 10/25/2013
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui Zhou, Andras Vladar, Richard M Silver, Abraham Arceo
Abstract: Identifying defects in photolithographic patterning is a persistent challenge in semiconductor manufacturing. Well-established optical methods in current use are jeopardized by upcoming sub-20 nm device dimensions. Volumetric processing of focus-reso ...

8. Harnessing 3D Scattered Optical Fields for sub-20 nm Defect Detection
Published: 6/24/2013
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui Zhou, Richard M Silver, Abraham Arceo
Abstract: Experimental imaging at =193 nm of sub-resolved defects performed at several focus positions yields a volume of spatial and intensity data. Defects are located in a differential volume, given a reference, with up to 5x increase in sensitivity ...

9. Enhancing 9 nm Node Dense Patterned Defect Optical Inspection using Polarization, Angle, and Focus
Published: 4/10/2013
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Abraham Arceo
Abstract: To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-si ...

10. Quantitative Characterization and Applications of A 193 nm Scatterfield Microscope
Published: 3/25/2013
Authors: Martin Y Sohn, Bryan M Barnes, Richard M Silver
Abstract: With decreasing feature sizes in semiconductor manufacturing, there is an acute demand for measurements of both critical dimensions (CD) and defects on the nanometer scale that must also be non-destructive measurement and provide high throughput1. Sc ...

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