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Author: martin sohn
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1. Optical volumetric inspection of sub-20 nm patterned defects with wafer noise
Published: 4/2/2014
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Richard M Silver, Andras Vladar, Abraham Arceo
Abstract: We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focus resolved 2-D ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915807

2. Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy
Published: 10/25/2013
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui Zhou, Andras Vladar, Richard M Silver, Abraham Arceo
Abstract: Identifying defects in photolithographic patterning is a persistent challenge in semiconductor manufacturing. Well-established optical methods in current use are jeopardized by upcoming sub-20 nm device dimensions. Volumetric processing of focus-reso ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914244

3. Harnessing 3D Scattered Optical Fields for sub-20 nm Defect Detection
Published: 6/24/2013
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui Zhou, Richard M Silver, Abraham Arceo
Abstract: Experimental imaging at =193 nm of sub-resolved defects performed at several focus positions yields a volume of spatial and intensity data. Defects are located in a differential volume, given a reference, with up to 5x increase in sensitivity ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913510

4. Enhancing 9 nm Node Dense Patterned Defect Optical Inspection using Polarization, Angle, and Focus
Published: 4/10/2013
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Abraham Arceo
Abstract: To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913542

5. Quantitative Characterization and Applications of A 193 nm Scatterfield Microscope
Published: 3/25/2013
Authors: Martin Y Sohn, Bryan M Barnes, Richard M Silver
Abstract: With decreasing feature sizes in semiconductor manufacturing, there is an acute demand for measurements of both critical dimensions (CD) and defects on the nanometer scale that must also be non-destructive measurement and provide high throughput1. Sc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912991

6. SCATTERFIELD MICROSCOPY, REVIEW OF TECHNIQUES THAT PUSH THE FUNDAMENTAL LIMITS OF OPTICAL DEFECT METROLOGY
Published: 3/25/2013
Authors: Richard M Silver, Bryan M Barnes, Francois R. Goasmat, Hui Zhou, Martin Y Sohn
Abstract: The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark- field inspection methods now at their limits, it has b ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913246

7. Scatterfield Microscopy of 22 nm Node Patterned Defects using Visible and DUV Light
Published: 4/4/2012
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui Zhou, Richard M Silver, Abraham Arceo
Abstract: Smaller patterning dimensions and novel architectures are fostering research into improved methods of defect detection in semiconductor device manufacturing. This initial experimental study, augmented with simulation, evaluates scatterfield microscop ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910963

8. Fundamental Limits of Optical Patterned Defect Metrology
Published: 11/14/2011
Authors: Richard M Silver, Bryan M Barnes, Martin Y Sohn, Hui Zhou, Jing Qin
Abstract: The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark-field inspection methods now at their limits, it has becom ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908849

9. Optical illumination optimization for patterned defect inspection
Published: 4/20/2011
Authors: Bryan M Barnes, Richard Quintanilha, Martin Y Sohn, Hui Zhou, Richard M Silver
Abstract: Rapidly decreasing critical dimensions (CD) for semiconductor devices drive the study of improved methods for the detection of defects within patterned areas. As reduced CDs are being achieved through directional patterning, additional constraints a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908276

10. Characterizing a Scatterfield Optical Platform for Semiconductor Metrology
Published: 12/21/2010
Authors: Bryan M Barnes, Ravikiran (Ravikiran) Attota, Richard Quintanilha, Martin Y Sohn, Richard M Silver
Abstract: Scatterfield microscopy is the union of a high-magnification imaging platform and the angular and/or wavelength control of scatterometry at the sample surface. Scatterfield microscopy uses Köhler illumination, where each point on the source translat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905931



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