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1. A New Interface Defect Spectroscopy Method
Published: 4/12/2011
Authors: Jason T Ryan, Liangchun (Liangchun) Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, C Wang, Jason P Campbell, John S Suehle, Vinayak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907880

2. A New Interface Defect Spectroscopy Method
Published: 4/11/2011
Authors: Jason T Ryan, Liangchun (Liangchun) Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Viniyak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907968

3. A new interface defect spectroscopy method
Published: 4/13/2011
Authors: Jason T Ryan, Liangchun (Liangchun) Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Jason P Campbell, Fei Zhang, Chen Wang, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908426

4. A new interface defect spectroscopy method
Published: 4/26/2011
Authors: Jason T Ryan, Liangchun (Liangchun) Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908427

5. Accurate Fast Capacitance Measurements for Reliable Device Characterization
Published: 7/1/2014
Authors: Pragya Rasmi Shrestha, Kin P Cheung, Jason P Campbell, Jason T Ryan, Helmut Baumgart
Abstract: As device dimensions continue to scale, transient phenomena are becoming increasingly more important to understand for both performance and reliability considerations. Recently, fast capacitances versus voltage (CV) measurements have been gaining at ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915216

6. Channel Length-Dependent Series Resistance?
Published: 6/10/2012
Authors: Jason P Campbell, Kin P Cheung, Serghei Drozdov, Richard G. Southwick, Jason T Ryan, Tony Oates, John S Suehle
Abstract: A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911515

7. Circuit Speed Timing Jitter Increase in Random Logic Operation after NBTI Stress
Published: 6/1/2014
Authors: Guangfan Jiao, Jiwu Lu, Jason P Campbell, Jason T Ryan, Kin P Cheung, Chadwin D. Young, Gennadi Bersuker
Abstract: Recently, much effort has been spent trying to relate NBTI observations to real circuit impacts. While many of these efforts rely on circuit simulation to bridge this gap, an experimental approach is, of course, preferred. In this study we provide th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915921

8. Circuit-Aware Device Reliability Criteria Methodology
Published: 9/12/2011
Authors: Jason T Ryan, Lan Wei, Jason P Campbell, Richard G. Southwick, Kin P Cheung, Anthony Oates, John S Suehle, Phillip Wong
Abstract: Meeting reliability requirements is an increasingly more difficult challenge with each generation of CMOS technology. The disconnection between conventional one-size-fits-all reliability specifications and the wide range of circuit applications might ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908765

9. Constant Shape Factor Frequency Modulated Charge Pumping (FMCP)
Published: 3/3/2014
Authors: Jason T Ryan, Jason P Campbell, Jibin Zou, Kin P Cheung, Richard Southwick, Anthony Oates, Rue Huang
Abstract: Abstract, We examine the seemingly frequency-dependent gate leakage current component of frequency-modulated charge pumping and show it to be a measurement artifact. If untreated, this results in erroneous defect density extractions. We present a co ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915082

10. Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter
Published: 12/13/2014
Authors: Guangfan Jiao, Jiwu Lu, Jason P Campbell, Jason T Ryan, Kin P Cheung, Chadwin D. Young, Gennadi Bersuker
Abstract: This work utilizes device-level eye-diagram measurements to examine NBTI-induced changes in timing jitter at circuit speeds. The measured jitter is examined for a variety of ring-oscillator and pseudo-random gate patterns. The ring-oscillator pattern ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916021



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