Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publications Portal

You searched on: Author: jason ryan Sorted by: date

Displaying records 1 to 10 of 32 records.
Resort by: Date / Title

1. Electron Spin Resonance Scanning Probe Spectroscopy for Ultra-Sensitive Biochemical Studies
Published: 4/22/2015
Authors: Jason P Campbell, Jason T Ryan, Pragya Rasmi Shrestha, Zhanglong Liu, Canute I. Vaz, Jihong Kim, Vasileia Georgiou, Kin P Cheung
Abstract: Electron spin resonance (ESR) spectroscopy‰s affinity for detecting paramagnetic free radicals, or spins, has been increasingly employed to examine a large variety of biochemical interactions. Such paramagnetic species are broadly found in nature ...

2. Interface-State Capture Cross Section , Why Does It Vary So Much?
Published: 4/20/2015
Authors: Jason T Ryan, Asahiko Matsuda, Jason P Campbell, Kin P Cheung
Abstract: A capture cross section value is often assigned to Si-SiO2 interface defects. Using a kinetic variation of the charge pumping technique and transition state theory, we show that the value of capture cross section is extremely sensitive to the mea ...

3. Frequency Modulated Charge Pumping with Extremely High Gate Leakage
Published: 2/13/2015
Authors: Jason T Ryan, Jibin Zou, Jason P Campbell, Richard Southwick, Kin P Cheung, Anthony Oates, Rue Huang
Abstract: Charge pumping (CP) has proven itself as one of the most utilitarian methods to quantify defects in metal-oxide-semiconductor devices. In the presence of low to moderate gate leakage, CP quantification is most often implemented via a series of measur ...

4. Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter
Published: 12/13/2014
Authors: Guangfan Jiao, Jiwu Lu, Jason P Campbell, Jason T Ryan, Kin P Cheung, Chadwin D. Young, Gennadi Bersuker
Abstract: This work utilizes device-level eye-diagram measurements to examine NBTI-induced changes in timing jitter at circuit speeds. The measured jitter is examined for a variety of ring-oscillator and pseudo-random gate patterns. The ring-oscillator pattern ...

5. PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic
Published: 11/13/2014
Authors: Jiwu Lu, Canute I. Vaz, Guangfan Jiao, Jason P Campbell, Jason T Ryan, Kin P Cheung, Gennadi Bersuker, Chadwin D. Young
Abstract: Accurate reliability predictions of real world digital logic circuits rely heavily on the relevancy of device level testing. In the case of bias temperature instability (BTI), where recovery plays a significant role, a leap of faith is taken to tran ...

6. Impact of BTI on Random Logic Circuit Critical Timing
Published: 10/31/2014
Authors: Kin P Cheung, Jiwu Lu, Guangfan Jiao, Jason P Campbell, Jason T Ryan
Abstract: Bias temperature instability (BTI) is known to be a serious reliability issue for state-of-the-art Silicon MOSFET technology [1-6]. It is well-known that in addition to a ,permanentŠ degradation, there is a large recoverable degradation component [7] ...

7. Device-Level PBTI-induced Timing Jitter Increase in Circuit-Speed Random Logic Operation
Published: 7/31/2014
Authors: Jiwu Lu, Canute I. Vaz, Jason P Campbell, Jason T Ryan, Kin P Cheung, Guangfan Jiao, Gennadi Bersuker, Chadwin D. Young
Abstract: We utilize eye-diagram measurements of timing jitter to investigate the impact of PBTI in devices subject to DC as well as ring oscillator (RO) and pseudo-random binary sequence (PRBS) stress waveforms. We observe that RO measurements miss the releva ...

8. Accurate Fast Capacitance Measurements for Reliable Device Characterization
Published: 7/1/2014
Authors: Pragya Rasmi Shrestha, Kin P Cheung, Jason P Campbell, Jason T Ryan, Helmut Baumgart
Abstract: As device dimensions continue to scale, transient phenomena are becoming increasingly more important to understand for both performance and reliability considerations. Recently, fast capacitances versus voltage (CV) measurements have been gaining at ...

9. Circuit Speed Timing Jitter Increase in Random Logic Operation after NBTI Stress
Published: 6/1/2014
Authors: Guangfan Jiao, Jiwu Lu, Jason P Campbell, Jason T Ryan, Kin P Cheung, Chadwin D. Young, Gennadi Bersuker
Abstract: Recently, much effort has been spent trying to relate NBTI observations to real circuit impacts. While many of these efforts rely on circuit simulation to bridge this gap, an experimental approach is, of course, preferred. In this study we provide th ...

10. Constant Shape Factor Frequency Modulated Charge Pumping (FMCP)
Published: 3/3/2014
Authors: Jason T Ryan, Jason P Campbell, Jibin Zou, Kin P Cheung, Richard Southwick, Anthony Oates, Rue Huang
Abstract: Abstract, We examine the seemingly frequency-dependent gate leakage current component of frequency-modulated charge pumping and show it to be a measurement artifact. If untreated, this results in erroneous defect density extractions. We present a co ...

Search NIST-wide:

(Search abstract and keywords)

Last Name:
First Name:

Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series