NIST logo

Publications Portal

You searched on:
Author: curt richter

Displaying records 11 to 20 of 166 records.
Resort by: Date / Title


11. Memristors with Flexible Electronic Applications
Published: 6/1/2012
Authors: Nadine Gergel-Hackett, Joseph Leo Tedesco, Curt A Richter
Abstract: In addition to the potential for memristors to be used in logic, memory, smart interconnects, and biologically-inspired architectures that could transform traditional silicon-based computing, memristors may enable such transformative technologies on ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906826

12. Tunnel FET Heterojunction Band Alignment by Internal Photoemission Spectroscopy
Published: 3/6/2012
Authors: Qin Q. Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Oleg A Kirillov, Curt A Richter, Nhan V Nguyen
Abstract: The electron energy band alignment of a metal-oxide-semiconductor tunnel field-effect transistor (TFET) heterojunction, W/Al2O3/InGaAs/InAs/InP is determined by internal photoemission spectroscopy. At the oxide flat-band condition, the barrier height ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909643

13. Spin transport in memristive devices
Published: 1/26/2012
Authors: Hyuk-Jae Jang, Oleg A Kirillov, Oana Jurchescu, Curt A Richter
Abstract: We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOX memristive devices consisting of Co(60nm)/TaOX(16nm)/Cu(5nm)/Py(60nm) with crossbar-type electrode geometry.The devices show memristive behavi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910149

14. Towards clean and crackless transfer of graphene
Published: 1/2/2012
Authors: Xuelei X. Liang, Brent A Sperling, Irene G. Calizo, Guangjun Cheng, Christina Ann Hacker, Qin Q. Zhang, Yaw S Obeng, Kai Yan, Hailin Peng, Qiliang Li, Xiaoxiao Zhu, Hui Yuan, Angela R Hight Walker, Zhongfan Liu, Lianmao Peng, Curt A Richter
Abstract: We present the results of a thorough study of wet chemical methods for transferring chemical vapor deposition grown graphene from the metal growth substrate to a device compatible substrate. Based on these results, we have developed a ,modified RCA c ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908399

15. Characterization and Resistive Switching Properties of Solution-Processed HfO2, HfSiO4, and ZrSiO4 Thin Films on Rigid and Flexible Substrates
Published: 12/7/2011
Authors: Joseph Leo Tedesco, Walter Zheng, Oleg A Kirillov, Sujitra Jeanie Pookpanratana, Hyuk-Jae Jang, Premsagar Purushotham Kavuri, Nhan V Nguyen, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910358

16. Quantum Hall effect on centimeter scale chemical vapor deposited graphene films
Published: 12/7/2011
Authors: Tian T. Shen, Wei Wu, Qingkai Yu, Curt A Richter, Randolph E Elmquist, David B Newell, Yong P Chen
Abstract: We report observations of well developed half integer quantum Hall effect on mono layer graphene films of 7 mm × 7 mm in size. The graphene films are grown by chemical vapor deposition on copper, then transferred to SiO2/Si su ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909565

17. TaOx Memristive Devices with Ferromagnetic Electrodes
Published: 12/7/2011
Authors: Hyuk-Jae Jang, Pragya Rasmi Shrestha, Oleg A Kirillov, Helmut Baumgart, Kin P Cheung, Oana Jurchescu, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910359

18. Fabrication and characterization of silicon-based molecular electronic devices
Published: 5/21/2011
Authors: Christina Ann Hacker, Michael A Walsh, Sujitra Jeanie Pookpanratana, Mariona Coll Bau, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908433

19. Fabrication, Characterization and Simulation of High Performance Si Nanowire-based Non-Volatile Memory Cells
Published: 5/16/2011
Authors: Xiaoxiao Zhu, Qiliang Li, D. E Ioannou, Diefeng Gu, John E Bonevich, Helmut Baumgart, John S Suehle, Curt A Richter
Abstract: We report the fabrication, characterization and simulation of Si nanowire SONOS-like non-volatile memory with HfO2 charge trapping layers of varying thickness. The memory cells, which are fabricated by self-aligning in-situ grown Si nanowires, exhibi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907251

20. Flexible Memristors Fabricated through Sol-Gel Hydrolysis
Published: 5/4/2011
Authors: Joseph Leo Tedesco, Nadine Gergel-Hackett, Laurie Stephey, Madelaine Herminia Hernandez, Andrew A Herzing, Lee J Richter, Christina Ann Hacker, Joseph J Kopanski, Jan Obrzut, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908437



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series