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Displaying records 11 to 20 of 174 records.
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11. Metrology For Organic Monolayers On Cobalt Surfaces
Published: 3/27/2013
Authors: Sujitra Jeanie Pookpanratana, Leigh Kent Lydecker, Hyuk-Jae Jang, Curt A Richter, Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912903

12. Charge-Based Capacitance Measurements Circuits for Interface With Atomic Force Microscope Probes
Published: 3/25/2013
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Chong Jiang, Michael Lorek, Timothy Kohler, Curt A Richter
Abstract: The charge based capacitance measurement (CBCM) technique is highly sensitive to small capacitances and capable integration of onto an AFM tip, thereby reducing stray and wire capacitance to the bare minimum. The CBCM technique has previous been appl ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913172

13. ELECTRICAL AND PHYSICAL CHARACTERIZATION OF BILAYER CARBOXYLIC ACID FUNCTIONALIZED MOLECULAR LAYERS
Published: 1/30/2013
Authors: Sujitra Jeanie Pookpanratana, Joseph William Robertson, Cherno Jaye, Daniel A Fischer, Curt A Richter, Christina Ann Hacker
Abstract: We have used Flip Chip Lamination (FCL) to form monolayer and bilayer molecular junctions of carboxylic acid-containing molecules with Cu atom incorporation. Carboxylic acid-terminated monolayers are self-assembled onto ultrasmooth Au using thiol che ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912203

14. Observation of spin-valve effect in Alq3 using a low work function metal
Published: 9/7/2012
Authors: Hyuk-Jae Jang, Kurt Pernstich, David J Gundlach, Oana Jurchescu, Curt A Richter
Abstract: We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to engineering of the band alignment. The devices ex ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911326

15. Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
Published: 7/11/2012
Authors: Rusen Yan, Qin Q. Zhang, Wei Li, Irene G. Calizo, Tian T. Shen, Curt A Richter, Angela R Hight Walker, Xuelei X. Liang, David J Gundlach, Nhan V Nguyen, Huili Grace Xing, Alan Seabaugh
Abstract: We determined the band alignment of a graphene-oxide-silicon structure using internal photoemission spectroscopy. From the flatband voltage and Dirac voltage we infer a 4.3  10e11 cm-2 negative extrinsic charge present on the graphene surface. Als ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911396

16. Memristors with Flexible Electronic Applications
Published: 6/1/2012
Authors: Nadine Gergel-Hackett, Joseph Leo Tedesco, Curt A Richter
Abstract: In addition to the potential for memristors to be used in logic, memory, smart interconnects, and biologically-inspired architectures that could transform traditional silicon-based computing, memristors may enable such transformative technologies on ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906826

17. Tunnel FET Heterojunction Band Alignment by Internal Photoemission Spectroscopy
Published: 3/6/2012
Authors: Qin Q. Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Oleg A Kirillov, Curt A Richter, Nhan V Nguyen
Abstract: The electron energy band alignment of a metal-oxide-semiconductor tunnel field-effect transistor (TFET) heterojunction, W/Al2O3/InGaAs/InAs/InP is determined by internal photoemission spectroscopy. At the oxide flat-band condition, the barrier height ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909643

18. Spin transport in memristive devices
Published: 1/26/2012
Authors: Hyuk-Jae Jang, Oleg A Kirillov, Oana Jurchescu, Curt A Richter
Abstract: We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOX memristive devices consisting of Co(60nm)/TaOX(16nm)/Cu(5nm)/Py(60nm) with crossbar-type electrode geometry.The devices show memristive behavi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910149

19. Towards clean and crackless transfer of graphene
Published: 1/2/2012
Authors: Xuelei X. Liang, Brent A Sperling, Irene G. Calizo, Guangjun Cheng, Christina Ann Hacker, Qin Q. Zhang, Yaw S Obeng, Kai Yan, Hailin Peng, Qiliang Li, Xiaoxiao Zhu, Hui Yuan, Angela R Hight Walker, Zhongfan Liu, Lianmao Peng, Curt A Richter
Abstract: We present the results of a thorough study of wet chemical methods for transferring chemical vapor deposition grown graphene from the metal growth substrate to a device compatible substrate. Based on these results, we have developed a ,modified RCA c ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908399

20. Influence of Interfacial Chemistry and Molecular Length on the Electronic Properties of Metal-Molecule-Silicon Junctions Produced by Flip Chip Lamination  
Published: 12/15/2011
Authors: Michael A Walsh, Mariona Coll, Benjamin Jones, Curt A Richter, Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910382



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