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Author: curt richter

Displaying records 161 to 170.
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161. Characterization of Thin SiO^d2^ on Si by Spectroscopic Ellipsometry, Neutron Reflectometry, and X-Ray Reflectometry
Published: 7/1/1998
Authors: Curt A Richter, Nhan V Nguyen, Joseph A. Dura, Charles F. Majkrzak
Abstract: We compare the results of neutron reflectometry, x-ray reflectometry, and spectroscopic ellipsometry measurements of a thin oxide film (=10 nm). These methods, which arise from three physically different scattering mechanisms, each determine physic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=9343

162. Thickness Determination of Ultra-Thin SiO^d2^ Films on Si by Spectroscopic Ellipsometry
Published: 12/31/1997
Authors: Nhan V Nguyen, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=835

163. X-Ray Reflectivity of Interface Roughness Correlated with Transport Properties of (AlGa)As/GaAs High Electron Mobility Transistor Devices
Published: 8/19/1996
Authors: Joseph A. Dura, Joseph G. Pellegrino, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=9288

164. Quantum Conductance Fluctuations in a New Size-Scale Regime
Published: 5/5/1996
Authors: Curt A Richter, David G Seiler, Joseph G. Pellegrino
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=4443

165. Buffer Layer - MODFET Interactions in the Al0.33Ga0.67As/GaAs Superlattice System
Published: 12/31/1995
Authors: Joseph G. Pellegrino, Curt A Richter, Joseph A. Dura, S. B. Qadri, B. Roughani, Paul M. Amirtharaj
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=2854

166. Mesoscopic Conductance Fluctuations in Large Devices
Published: 12/31/1995
Authors: Curt A Richter, David G Seiler, Joseph G. Pellegrino
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=23051

167. Novel Magnetic Field Characterization Techniques for Compound Semiconductor Materials and Devices
Published: 12/31/1995
Authors: Curt A Richter, David G Seiler, Joseph G. Pellegrino, W. F. Tseng, W. Robert Thurber
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=2579

168. Bulk Electrical Characterization of Single-Walled Carbon Nanotubes: Effects of Ozonolyis and Subsequent Growth of Quantum Dots
Published: Date unknown
Authors: L C Teague, S Banerjee, S S Wong, Curt A Richter, J Batteas
Abstract: Chemical modification of single-walled carbon nanotubes (SWNTs) provides several methods of altering the inherent electrical properties of the tubes for use in nanoscale electronics and sensing applications. Here, the bulk resistivities, as determin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831394

169. A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets
Published: 1/2/0013
Authors: Qin Q. Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A Kirillov, David J Gundlach, Curt A Richter, Nhan V Nguyen
Abstract: We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912713

170. Direct Measurement of Intrinsic Dirac Point and Fermi level at Graphene/Oxide interface and Its Band Alignment by Cavity Enhanced Internal Photoemission
Published: 12/17/0012
Authors: Kun Xu, Caifu Zeng, Qin Q. Zhang, Rusen Yan, Peide Ye, Kang Wang, Alan C. Seabaugh, Huili G. Xing, John S Suehle, Curt A Richter, David J Gundlach, Nhan V Nguyen
Abstract: We report the first direct measurement of the Dirac point, the Fermi level, and the work function of graphene by performing internal photoemission measurements on a graphene/SiO2/Si structure with a unique optical-cavity enhanced test structure. ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912242



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