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Author: curt richter

Displaying records 161 to 166.
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161. Buffer Layer - MODFET Interactions in the Al0.33Ga0.67As/GaAs Superlattice System
Published: 12/31/1995
Authors: Joseph G. Pellegrino, Curt A Richter, Joseph A. Dura, S. B. Qadri, B. Roughani, Paul M. Amirtharaj

162. Mesoscopic Conductance Fluctuations in Large Devices
Published: 12/31/1995
Authors: Curt A Richter, David G Seiler, Joseph G. Pellegrino

163. Novel Magnetic Field Characterization Techniques for Compound Semiconductor Materials and Devices
Published: 12/31/1995
Authors: Curt A Richter, David G Seiler, Joseph G. Pellegrino, W. F. Tseng, W. Robert Thurber

164. Bulk Electrical Characterization of Single-Walled Carbon Nanotubes: Effects of Ozonolyis and Subsequent Growth of Quantum Dots
Published: Date unknown
Authors: L C Teague, S Banerjee, S S Wong, Curt A Richter, J Batteas
Abstract: Chemical modification of single-walled carbon nanotubes (SWNTs) provides several methods of altering the inherent electrical properties of the tubes for use in nanoscale electronics and sensing applications. Here, the bulk resistivities, as determin ...

165. A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets
Published: 1/2/0013
Authors: Qin Q. Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A Kirillov, David J Gundlach, Curt A Richter, Nhan V Nguyen
Abstract: We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band a ...

166. Direct Measurement of Intrinsic Dirac Point and Fermi level at Graphene/Oxide interface and Its Band Alignment by Cavity Enhanced Internal Photoemission
Published: 12/17/0012
Authors: Kun Xu, Caifu Zeng, Qin Q. Zhang, Rusen Yan, Peide Ye, Kang Wang, Alan C. Seabaugh, Huili G. Xing, John S Suehle, Curt A Richter, David J Gundlach, Nhan V Nguyen
Abstract: We report the first direct measurement of the Dirac point, the Fermi level, and the work function of graphene by performing internal photoemission measurements on a graphene/SiO2/Si structure with a unique optical-cavity enhanced test structure. ...

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